- •2. Эл. Детектировать, выпрямлять detection л 1. Раскрытие, обнаружение; 2. Радио детектирование
- •Vacant а 1. Пустой; незаполненный;
- •2 Резонанс victory п победа
- •X rays п икс-лучи, рентгеновы лучи
- •Volve, point. Перевод слов с префиксами dis-, in-, ir-, un-, non-, mal-.
- •Первое занятие
- •Работа в аудитории
- •Раздел 1. Первое занятие
- •Раздел 1 Первое занятие
- •Раздел 1 Первое занятие
- •Раздел 1 Первое занятие
- •Раздел 1 Первое занятие
- •Внеаудиторная работа
- •Раздел 1 Первое занятие
- •In reference to - относительно of reference — исходный, отсчет- ный; эталонный reference language — эталонный язык
- •Individual circuit chip — кристалл t малой степенью интеграции master chip — базовый кристалл microchip - микропроцессора бис
- •Раздел 1. Первое занятие
- •Раздел 1 Первое занятие
- •Второе занятие
- •Работа в аудитории
- •Раздел 1 Второе занятие
- •Раздел 1 Второе занятие
- •Внеаудиторная работа
- •Раздел 1 Второе занятие
- •5. Учитесь говорить.
- •Третье занятие Контроль изученного материала
- •Раздел 1 Третье занятие
- •Раздел 1 Третье занятие
- •1.24. 1. Дайте определение типов интегральных схем.
- •Раздел 2. Первое занятие
- •Основной текст
- •Раздел 2 Первое занятие
- •Раздел 2 Перпое занятие
- •Раздел 2 Первое занятие
- •Раздел 2. Первое занятие
- •Внеаудиторная работа
- •Раздел 2 Первое занятие
- •Раздел 2 Первое занятие
- •Раздел 2. Первое занятие
- •Раздел 2 Первое занятие
- •Раздел 2 Второе занятие
- •Работа в аудитории
- •Раздел 2 Второе занятие
- •Раздел 2 Второе занятие
- •Внеаудиторная работа
- •Раздел 2 Второе занятие
- •Контроль изученного материала
- •Раздел 2 Третье занятие
- •Раздел 2 Третье занятие
- •Раздел 2 Третье занятие
- •Раздел 2 Третье занятие
- •Раздел 3• Первое заня ие
- •Раздел 3 Первое занятие
- •Раздел 3• Первое занятие
- •Раздел 3 Первое занятие
- •Раздел 3 Первое занятие
- •Внеаудиторная работа
- •Раздел 3 Первое занятие
- •Раздел 3 Первое занятие
- •Раздел 3 Первое занятие
- •Раздел 3 Второе занятие
- •Раздел 3 Второе занятие
- •Раздел 3 Второе занятие
- •Внеаудиторная работа
- •Раздел 3 Второе занятие
- •Раздел 3 Второе занятие
- •Раздел 3 Третье занятие
- •Контроль изученного материала
- •Раздел 3 Третье занятие
- •Раздел 3 Третье занятие
- •Раздел 3 Третье занятие
- •Работа в аудитории
- •Раздел 4 Первое занятие
- •Раздел 4. Первое занятие
- •Раздел 4 Первое занятие
- •Раздел 4 Первое занятие
- •Раздел 4 Первое занятие
- •Раздел 4 Первое занятие
- •Внеаудиторная работа
- •Раздел 4. Первое занятие
- •Раздел 4 Первое занятие
- •Раздел 4. Первое занятие
- •Раздел 4. Первое занятие
- •Работа в аудитории
- •Раздел 4 Второе rm
- •Раздел 4. Второе занятие
- •Внеаудиторная работа
- •Раздел 4. Второе занятие
- •Раздел 4. Третье занятие
- •Контроль изученного материала
- •Раздел 4 Третье занятие
- •Раздел 4. Третье занятие
- •Работа в аудитории
- •Раздел 5 Первое занятие
- •Раздел 5. Первое занятие
- •Раздел 5 Первое занятие
- •Раздел 5. Первое занятие
- •Внеаудиторная работа
- •Раздел 5 Первое занятие
- •Раздел 5. Первое занятие
- •Раздел 5. Первое занятие
- •Работа в аудитории
- •Раздел 5 Второе занятие
- •Раздел 5. Второе занятие
- •Внеаудиторная работа
- •Раздел 5 Третье занятие
- •Третье занятие
- •Контроль изученного материала
- •Раздел 5. Третье занятие
- •Раздел 5 Третье занятие
- •Первое занятие
- •Работа в аудитории
- •Раздел 6. Первое занятие
- •Основной текст
- •Раздел 6. Первое занятие
- •Раздел 6 Первое занятие
- •Раздел 6 Первое занятие
- •Внеаудиторная работа
- •Раздел 6. Перв. Е занятие
- •Раздел 6 Первое занятие
- •Раздел 6 Первое занятие
- •Раздел 6 Первое занятие
- •Раздел 6 Второе занятие
- •Второе занятие
- •Работа в аудитории
- •Раздел 6 Второе занятие
- •Внеаудиторная работа
- •Раздел 6 Второе занятие
- •Третье занятие
- •Контроль изученного материала
- •Раздел 6 Третье занятие
- •Раздел 6. Третье занятие
- •127994, Москва, гсп-4, Неглинная ул , 29/14.
220
Микроэлектроника
настоящее и будущ
2
Included
in
this section is
a
description of...
Shown
on
the photo is
the
computer...
Переведите
следующие речевые отрезки, содержащие
инвертированные конструкции.
Обратите внимание на языковые средства,
вызывающие инверсию:
1
Important
for
the computer is
the
problem of information securit).
Fundamental
to
the design of computer is
its
size.
2
Of
special interest are the
so-called cash memories.
Of
primary importance to
science are
the
advances in computer developments.
Переведите
следующие речевые отрезки, содержащие
инвертированные конструкции.
Обратите внимание на союзы as
и
though,
стоящие после прилагательных. Данные
сочетания могут вызвать явление
грамматической инверсии. Перевод
обычно начинается с союза, имеющего
значение «хотя» в данном случае, затем
переводится подлежащее (N1).
Useful
as electron
tubes were,
they
are not used at present.
Uncertain
though the
information was,
it
was quite useful.
Переведите
устно с листа первую часть текста (I).
Работа выполняется под руководством
преподавателя.
Перевод
второй части текста (II) выполняется
письменно как домашнее задание.
Ознакомьтесь
с терминами первой части основного
текста.
nanosecond
—
наносекунда operating
instructions —
рабочие инструкции
read/write
memory —
постоянная память, допускающая и
считывание, и запись; оперативная память
storage
capacity —
емкость памяти access
time —
время доступа cycle
time —
время цикла
storage
location —
ячейка памяти data
transfer — перенос
данных, пересылка данных random-access
memory —
ЗУ с произ вольной выборкой cache
—
кэш
serial
access memory —
ЗУ с последо вательным выбором buffer
memory —
буферная память
Основной текст
221
Switch
device —
устройство подключения
funnel-junction
devices —
сверхпроводящие приборы с туннельным
переходом
grid
of wires —
сетка тонкопроводящих дорожек address
bus —
адресная шина instance
—
экземпляр объекта New
Developments in
Electronic Memories
The
versatile capabilities that have made the computer the great
success of our age are due to exploitation of the high speed of
electronic computation by means of stored programs. This process
requires that intermediate results be stored rapidly and furnished1
on demand for long computations, for which high speed is
worthwhile2
in the first place.
Memory
is the predominant computer subsystem. It is a critical3
element
to consider in the integration of a system.
Once
prepared, a program can be reused any number of times which involves
remembering and retrieving4
(recalling), for which high speed is worthwhile in the first place.
Storage
devices or memories must have capacities sufficient not only for
intermediate results but for the input and output data and the
programs.
Never
before has man possessed a tool comparable to a computer. Today
there are memories accessible in tens of nanoseconds and memories
with more than a billion bits. The demand for fast access and large
capacity has grown constantly.
Memory
is the storage medium used to hold5
the system’s operating6
instructions and the specific application programs in use.
Computers
can “remember” and “recall”, and virtually unlimited is
the capacity of computers to remember (that is to store digital
information). Associated7
with the capacity of remembering is the capacity of recalling.
In
the context of electronics, “memory” (or, in British usage,
“store”) usually refers to a device for storing information.
Storage (“write”) and retrieval (“read”) operations are
completely8
under electronic control.
The
term “Read/Write memories” signify9
that they perform read and write operations at an identical10
or similar rate. Read/Write means that data is written to a bit11
and then read from the bit.Раздел 6. Первое занятие
222
Микроэлектроника
настоящее и будущ
Of
primary importance to characteristics for memories are stor- age
capacity size, cost per bit and reliability. Other important charac
teristics are speed of operation (defined in terms of access time),
cycle 12
time and data-transfer rate.
Access
time is simply the time it takes to read or write at any storage
location n.
The
cycle time is the specified minimum period to complete read and
write operations.
The
data-transfer rate is the rate at which information is trans ferred
to or from sequential storage positions. Most forms of memory are
intended to store data temporarily.
As
you can see in the diagram the CPU accesses memory according to
a distinct hierarchy.
Whether
it comes from permanent storage (the hard drive14)
or input (the keyboard), most data goes in random access memory
(RAM) first. The CPU then stores pieces of data it will need to
access, often in a cache15,
and maintains certain special instructions in the register16.
Random
access memory (RAM) is the best known form of computer memory.
RAM is considered “random access” because you can access any
memory cell17
directly if you know the row18
and column that intersects19
at that cell.
The
opposite of RAM is serial access memory (SAM). SAM stores data as a
series of memory cells that can only be accessed sequentially
20
(like a cassette tape). If the data is not in the current21
location, each memory cell is checked until the needed data is
found. SAM works very well for memory buffers22.
A
computer’s system RAM alone is not fast enough to match2'
the speed of the CPU. That is why you need a cache.
At
present, the smallest block of information accessible in a memory
system can be a single bit (represented24
by 0
or 1),
a larger group of bits such as a byte or character25
(usually eight or nine bits), or a
word
(16 to 128 bits depending on the particular system). Most memories
are location-addressable26,
which means that a desired bit, byte or word has a specified address
or physical location to which it is assigned27.
Semiconductor
memories are extremely versatile and highly compatible28
with other electronic devices in both small and large systems
\
раздел 6
Первое занятие
223
Input
Sources
Mouse
Removable
Media
Scanner/
Camera/
Micf
Video
Other
Sources
HP
announced29
dramatic30
new breakthrough in molecular electronics.
Quantum
Science Research group created the highest density electronically
addressable circuit, a 128-bit memory using molecular switches as
active devices, which fits31
inside a square micron — an area so tiny (маленькая)
that
more than 1,000
of these circuits could be on the end of a single strand (прядь)
of
a human hair. The bit density of the device is more than 10
times greater than today’s silicon memory chips. For the first
time, they combined both memory and logic using rewritable
non-volatile32
molecular-switch devices and fabricated the circuits using an
advanced system of manufacturing called nano-imprint lithography.
“Wfe
believe molecular electronics will push advances in future computer
technology far beyond the limits of silicon,” said Williams,
P. Fellow (сотрудник) and director of Quantum Science Research at H. P. Labs. “Capacity, and performance could be extended enormously by layering molecular-switch devices on conventional silicon
224
Микроэлектроника
настоящее и будут
without
the need for complex and expensive changes to the base tech nology.”
The problem that computer designers face is that memory that can
keep up33
with a 1
gigahertz CPU is extremely expensive. Com puter designers have
solved the cost problem by “tiering34,7
in memory using expensive memory in small quantities and then
backing it up with larger quantities of less expensive memory.
Of
prime interest to a reader will be the knowledge of the development
of memories.
One
of the first electronic memories was a circulating delay line a
signal transmission device in which the output, properly amplified
and shaped, was fed back into the input. Although it was economical
it had the inherent38
drawback39
of serial access: the greater the capacity, the longer the
average access time. What was really needed was selective40
access to any stored data in a time that was both as short as
possible and independent of the data address or any previous access.
This is known as random access, so named to emphasize41
the total freedom of accessing and therefore of branching42
(following one or another part of a program). The first
random-access memories (RAMs) were electrostatic storage tubes43.
In
the early 1950’s the core memory44
replaced these early devices, providing a solution to the need
for random access that truly fired the emerging computer industry.
The
core memory has become the main internal computer memory and
was used universally until challenged by semiconductor memories.
Typical are memories with 1 million words (or 30 to 60 bits each)»
randomly accessible in 1 microsecond. The core memory has also been
extended to very large capacities, of the order of 100
million words
In
the 1950’sand 1960’s electronic memories were arrays of cores,
or
rings, of ferrite material a millimeter or less in diameter, strung4
b> thousands on a grid46
of wires. Ferrite-core memories have now been
largely
succeeded47
in new designs by semiconductor memories that provide faster data
access, smaller physical size and lower power consumption, and
all at significantly lower cost.
In
the early 1970’s semiconductor memory cells that served
the
same purpose as cores were developed, and integrated memory cif'
cuits began to be installed as the main computer memory.