Раздел 3 Второе занятие

139

ВТОРОЕ ЗАНЯТИЕ

Работа в аудитории

1. Проверьте домашнее задание.

1. Проверьте письменный перевод второй части основного текста.

2. Проверьте упражнения (выборочно).

3. Проверьте, как вы запомнили слова (выборочно).

4. Проверьте устное изложение первой части основного текста.

2. Учитесь переводить.

15. Переведите устно, учитывая особенности перевода сказуемых.

1

1. There is a continuous demand for improved metallurgical con­tacts in semiconductor devices.

2. The junction becomes vulnerable to diffusion between the metal layers and silicon.

3. The tremendous interest in small device structures is presently active due to the increasing requirements for obtaining very small circuit elements.

4. The size requirements are becoming increasingly severe.

5. Today, the technology is evolving at an ever-increasing speed.

6. The selection is of primary importance.

7. Increase in the packing density and also the complexity of these devices are primarily due to scaling down of the individual cells.

8. Line width gets narrower.

9. One of the primary considerations is to obtain a material with high electrical conductivity and low ohmic contact resistance.

10. These parameters are to be maintained throughout the high temperatures.

11. The material is to have resistance to the corrosion and oxidation.

12. Films of this thickness are likely to be very difficult to deposit in a continuous manner.

Микроэлектроника настоящее и будущее

2

1. The most highly conductive film reported today was obtained by a metal-rich concentration.

2. Films produced by sputtering both exhibited a tetragonal crys­tal structure.

3. The resistivity of the MoSi film was found to be less than that of polysilicon.

4. The temperature for recrystallization to obtain the lowest pos­sible resistivity in effect is controlled by. impurities.

5. The films used were found to be mechanically strong.

6. The film composition changed with time due to the different sputter.

3

1. Polysilicon has been the dominant interconnect material.

2. The plasma-etching process has been shown to have important advantages in terms of cost.

3. The phosphorus concentration had no influence on the resis­tivity of the film.

4. The control method has only recently been applied to the design.

5. There have been no directly comparable projects.

6. Any potential microprocessor user now has to make a choice from plenty of ICs.

Текст 3.1 В

Переведите текст устно (с листа) без словаря. Значение выделенных слов вы смо­жете понять из контекста.

Вариант 1

Laying Down Thin Film

Most often, thin-film deposition on a ceramic substrate is done in a vacuum chamber by evaporating or sputtering conductive, resistive, or dielectric material on a carefully cleaned substrate.

The vacuum prevents oxidation and allows the molecules of ma­terial being deposited to travel to the target with minimum collisions with gas molecules.