Раздел 3 Второе занятие

141

Вариант 2

Evaporation and Sputtering

1л the ease of evaporation, the material to be deposited is heated by a resistive heating unit until the molecules acquire the thermal energy necessary to leave the surface at a suitable speed to ensure deposition.

Sputtering differs from evaporation in that an electrical field ac­celerates the positive gas ions toward a cathode that is covered with a material to be deposited. An ion striking the cathode causes a mole­cule to be ejected and deposited on the substrate.

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Вариант I

Rapid Thermal Processing

RTP is one of the exciting new wafer fabrication technologies. Its origin can be traced to the laser annealing (отжиг) research of the ear­ly 1980’s, but it is only with the very recent appearance of techniques and equipment suitable for use in production that the technique has begun to attract serious attention of process engineers.

Current applications for RTP include ion implant annealing, glass reflow, silicide formation, and deposition of thin gate oxides. The RTP equipment market is expected to have one of the highest growth fac­tors in the equipment industry.

Вариант 2

Tungsten

Tungsten is of particular interest in IC technology because it can be deposited in a self-aligning (самосовмещенный) chemically se­lective manner on silicon, metals, or silicides. Its volume filling capa­

Микроэлектроника настоящее и будущее

bility serves to enhance planarity, a high priority in multilevel chip de­signs, and because it can be deposited without additional masks, pro­cess complexity is reduced with savings in cost.

Selective low-pressure chemical vapour deposition (LPCVD) of tungsten can provide diffusion and etch barriers via fills, low resistance source, drain and gate shunts, masks for X-ray lithography and many others.

The last years have been a time of rapid progress in LPCVD tung­sten technology.

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Dry Process Technology

LSI technology has been the cutting edge of the innovate semi­conductor industry. In the field of the process technology, much effort has been made to improve microfabrication and thinner-film formation technology. In particular, improvements in photolitho­graphic and etching techniques are the keys to the integration of more devices on smaller chips, increases in circuit performance, and improvement in wafer process yield.

Dry etching technology represents a new and exciting method for defining precise images in insulators, semiconductors, and met­als. Gas plasma etching technology in dry process like RF sputter­ing, ion beam milling, reactive ion etching, and reactive ion beam etching is widely used as a fundamental tool for the fabrication of MOS, bipolar LSIs, discrete devices and hard mask. It results in improved image size, simplification of the manufacturing process, precise shape control of fine patterns, and development of a clean-