Микрстектроника настоящее и будущ _t

Thick film circuits are prepared in a similar manner except that the passive components and wiring are formed by silk-screen tech­niques on ceramic substrates.

There can be many instances where the microelectronic circuit may combine more than one of these approaches in a single structure using a combination of techniques.

In multichip circuits the electronic components for a circuit are formed in two or more silicon wafers (chips). The chips are mounted side by side on a common header. Some interconnections are includ­ed on each chip, and the circuit is completed by wiring the chips to gether with small diameter gold wire.

Hybrid IC’s are combinations of monolithic and film techniques Active components are formed in a wafer of silicon using the pla­nar process, and the passive components and interconnection winng pattern formed on the surface of silicon oxide which covers the wafer, using evaporation techniques.

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Текст 1.4 В

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Integrated Circuit Development

Three factors have contributed to the rapid development growth in the number of circuit elements per chip.

One factor is improvement in techniques for growing large single crystals of pure silicon. By increasing the diameter of the wafers — the discs of silicon on which chips are manufactured — more chips can be made at one time, reducing the unit cost.

Moreover, the quality of the material has also been improved, re- ducing the number of defects per wafer. This has the effect of increas­ing the maximum practical size of a chip because it reduces the prob­ability that a defect will be found within a given area. The chip size for large-scale integrated circuits has grown from less than 10,000 square mils (thousandths of an inch) to 70,000.

A second factor is improvement in optical lithography, the pro­cess whereby all the patterns that make up a circuit are ultimately trans­ferred to the surface of the silicon. By developing optical systems ca­pable of resolving finer structures, the size of a typical transistor, as measured by the gate length, has been reduced from a few thousandths of an inch in 1965 to 0.15 microns today.

Finally, refinements in circuit structure that make more efficient use of silicon area have led to a hundredfold increase in the density of transistors on the chip.

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Текст 1.5 В

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Микроэлектроника настоящее и будущ

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Integrated Circuits: A Brief History

The semiconductor industry can trace its roots back to the inven­tion of the first semiconductor transistor by William Shockley, John Bardeen, and Walter Brattain at Bell Labs in 1947. Their crude device was assembled from a small piece of germanium, some gold foil, a pa per clip, and several pieces of plastic. Though crudely constructed, it performed its function of using a voltage to switch an electrical current on or off quite well. This simple device is the parent of all of the vari­ous semiconductor transistor devices produced over the years, includ­ing computer microprocessors, memory chips, and solid state power amplification circuits.

The new transistor found a home in a number of markets where it could replace bulky and troublesome vacuum tubes (radios and tele­visions), and it created new markets that were invented specifically to exploit its use. The discrete transistor was quickly incorporated in everything from telephone equipment to pocket-sized transistor ra­dios. It is interesting to note that the size of the parts in these early discrete devices were of the order of tenths of an inch. By the late 1950s, the discrete transistor market was worth an estimated $ 1 bil lion annually.

The next major step in semiconductors was the invention of the first monolithic integrated circuit by Jack Kilby and Robert Noyce in 1960. Their integrated devices consisted of many solid-state tran­sistors that were manufactured and interconnected internally on a single semiconductor substrate. The typical minimum feature size in these early products was greater than 20 mm, significantly smaller than some of their discrete transistor counterparts. The ability to in­terconnect the devices internally allowed more complex functions to be performed by a single device. Interconnection also made it possi'