Раздел 3 Третье занятие

149

ТРЕТЬЕ ЗАНЯТИЕ

Контроль изученного материала

1. Контроль перевода основного текста.

Выполняется устно (выборочно).

2. Контроль слов в словосочетаниях.

Выполняется устно или письменно (по выбору преподавателя).

3. Контроль умения выявлять значения слов с учетом кон­текста.

   22. Переведите, выявляя контекстуальное значение выделенных слов due to, appear, advance:

1. The numerical value of the conductivity changes due to the con­centration of impurities.

2. The significance a semiconductor achieved is due to the electrons being raised to the conduction band.

3. Current due to holes injected into the collector from the base can be neglected since it is very small.

4. New design tools and development systems are appearing.

5. The limiting point appears to be between 10 and 30 ohms.

6. Recent technological advances in software development are now opening new horizons.

7. The advances made by device fabrication have allowed all func­tions to be integrated into just one chip.

22. Выявите контекстуальное значение выделенных слов без словаря:

1. More efficient communication demands a continually increasing level of control in progressively-thinner layers.

2. The extension of any semiconductor technology to small dimen­sions brings with it a host of new technology, physics and engi­neering challenges.

Микроэлектроника настоящее и будущее

4. Контроль умения переводить.

Текст 3.8 В

Переведите устно текст с листа под руководством преподавателя.

Submicron Technology

Silicon is the workhorse for most integrated circuit devices. Sili­con processing technologies continually change. A number of techno­logical changes must be expected with the advent of electron beam mask-making, i.e. with the development of submicron technology to produce ultra-complex devices based upon dimensions which can no longer be fabricated with the use of visible or near visible light.

The need for submicron technology is based upon continuing pres­sures to improve microelectronic capabilities. The present optical meth­ods are reaching their limits. The increasing sophistication of elec­tronics systems continually pushes the state-of-the art of both memory and logic circuits. Improvements in cost, speed, density and power consumption are being sought.

Submicron technology refers to the fabrication of semiconductor devices with features having masked dimensions less than one micron. Normal IC technology uses mask dimensions of about five microns. By using electron beams, it is now possible to fabricate circuits with features less than one micron. Within the next few years submicron technology will become a major factor in the production of integrated circuits.

Because of the small dimensions required, it is no longer possible to use conventional optical methods to define the surface of an integrat­ed circuit. Even optical inspection is limited because of the small di­mensions. In place of light, X-rays and electron beam are used to pat­tern the surface of the semiconductor wafer.

In the same manner as the electron microscope provided superior resolution over the optical microscope, electron beam technology is about to impact the integrated circuit industry. The advantage of e-beam tech­nology is that the wavelength of electrons is substantially less than the wave­length of light. E-beam technology is accompanied by the use of X-rays. X-rays have the advantage that they travel in a straight line. X-rays do not require vacuum as do electrons, which may simplify production techniques.