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ATmega128

External Data Memory Timing

Table 137. External Data Memory Characteristics, 4.5 - 5.5 Volts, No Wait-state

 

 

 

 

8MHz Oscillator

Variable Oscillator

 

 

 

 

 

 

 

 

 

 

 

Symbol

Parameter

Min

Max

Min

Max

Unit

 

 

 

 

 

 

 

 

 

0

1/tCLCL

Oscillator Frequency

 

 

0.0

16

 

MHz

1

tLHLL

ALE Pulse Width

115

 

1.0tCLCL-10

 

 

 

2

t

AVLL

Address Valid A to ALE Low

57.5

 

0.5t

-5(1)

 

 

 

 

 

 

 

 

CLCL

 

 

 

 

 

 

Address Hold After ALE Low,

5

 

5

 

 

 

 

3a

tLLAX_ST

write access

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Address Hold after ALE Low,

5

 

5

 

 

 

 

3b

tLLAX_LD

read access

 

 

 

 

 

 

 

 

 

 

 

 

4

t

AVLLC

Address Valid C to ALE Low

57.5

 

0.5t

-5(1)

 

 

 

 

 

 

 

 

CLCL

 

 

 

5

tAVRL

Address Valid to RD Low

115

 

1.0tCLCL-10

 

 

 

6

tAVWL

Address Valid to WR Low

115

 

1.0tCLCL-10

 

 

 

7

t

LLWL

ALE Low to WR Low

47.5

67.5

0.5t

-15(2)

0.5t

+5(2)

 

 

 

 

 

 

CLCL

 

CLCL

 

ns

8

t

LLRL

ALE Low to RD Low

47.5

67.5

0.5t

-15(2)

0.5t

+5(2)

 

 

 

 

 

 

CLCL

 

CLCL

 

 

9

tDVRH

Data Setup to RD High

40

 

40

 

 

 

 

10

tRLDV

Read Low to Data Valid

 

75

 

 

1.0tCLCL-50

 

11

tRHDX

Data Hold After RD High

0

 

0

 

 

 

 

12

tRLRH

RD Pulse Width

115

 

1.0tCLCL-10

 

 

 

13

t

DVWL

Data Setup to WR Low

42.5

 

0.5t

-20(1)

 

 

 

 

 

 

 

 

CLCL

 

 

 

 

14

tWHDX

Data Hold After WR High

115

 

1.0tCLCL-10

 

 

 

15

tDVWH

Data Valid to WR High

125

 

1.0tCLCL

 

 

 

16

tWLWH

WR Pulse Width

115

 

1.0tCLCL-10

 

 

 

Notes: 1. This assumes 50% clock duty cycle. The half period is actually the high time of the external clock, XTAL1. 2. This assumes 50% clock duty cycle. The half period is actually the low time of the external clock, XTAL1.

Table 138. External Data Memory Characteristics, 4.5 - 5.5V, 1 Cycle Wait-state

 

 

 

8MHz Oscillator

Variable Oscillator

 

 

 

 

 

 

 

 

 

 

Symbol

Parameter

Min

Max

Min

Max

Unit

 

 

 

 

 

 

 

 

0

1/tCLCL

Oscillator Frequency

 

 

0.0

16

MHz

10

tRLDV

Read Low to Data Valid

 

200

 

2.0tCLCL-50

 

12

tRLRH

RD Pulse Width

240

 

2.0tCLCL-10

 

ns

15

tDVWH

Data Valid to WR High

240

 

2.0tCLCL

 

 

 

 

16

tWLWH

WR Pulse Width

240

 

2.0tCLCL-10

 

 

328

2467X–AVR–06/11

ATmega128

Table 139. External Data Memory Characteristics, 4.5 - 5.5V, SRWn1 = 1, SRWn0 = 0

 

 

 

4MHz Oscillator

Variable Oscillator

 

 

 

 

 

 

 

 

 

 

Symbol

Parameter

Min

Max

Min

Max

Unit

 

 

 

 

 

 

 

 

0

1/tCLCL

Oscillator Frequency

 

 

0.0

16

MHz

10

tRLDV

Read Low to Data Valid

 

325

 

3.0tCLCL-50

 

12

tRLRH

RD Pulse Width

365

 

3.0tCLCL-10

 

ns

15

tDVWH

Data Valid to WR High

375

 

3.0tCLCL

 

 

 

 

16

tWLWH

WR Pulse Width

365

 

3.0tCLCL-10

 

 

Table 140. External Data Memory Characteristics, 4.5 - 5.5 Volts, SRWn1 = 1, SRWn0 = 1

 

 

 

4MHz Oscillator

Variable Oscillator

 

 

 

 

 

 

 

 

 

 

Symbol

Parameter

Min

Max

Min

Max

Unit

 

 

 

 

 

 

 

 

0

1/tCLCL

Oscillator Frequency

 

 

0.0

16

MHz

10

tRLDV

Read Low to Data Valid

 

325

 

3.0tCLCL-50

 

12

tRLRH

RD Pulse Width

365

 

3.0tCLCL-10

 

 

14

tWHDX

Data Hold After WR High

240

 

2.0tCLCL-10

 

ns

15

tDVWH

Data Valid to WR High

375

 

3.0tCLCL

 

 

16

tWLWH

WR Pulse Width

365

 

3.0tCLCL-10

 

 

Table 141. External Data Memory Characteristics, 2.7 - 5.5V, No Wait-state

 

 

 

4MHz Oscillator

 

Variable Oscillator

 

 

 

 

 

 

 

 

 

 

 

 

Symbol

Parameter

Min

Max

 

Min

Max

Unit

 

 

 

 

 

 

 

 

 

 

0

1/tCLCL

Oscillator Frequency

 

 

 

0.0

8

 

MHz

1

tLHLL

ALE Pulse Width

235

 

tCLCL-15

 

 

 

2

t

Address Valid A to ALE Low

115

 

0.5t

-10(1)

 

 

 

 

AVLL

 

 

 

 

CLCL

 

 

 

 

 

Address Hold After ALE Low,

5

 

 

5

 

 

 

3a

tLLAX_ST

write access

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Address Hold after ALE Low,

5

 

 

5

 

 

 

3b

tLLAX_LD

read access

 

 

 

 

 

 

 

 

 

 

 

 

4

t

Address Valid C to ALE Low

115

 

0.5t

-10(1)

 

 

 

 

AVLLC

 

 

 

 

CLCL

 

 

 

5

tAVRL

Address Valid to RD Low

235

 

1.0tCLCL-15

 

 

ns

6

tAVWL

Address Valid to WR Low

235

 

1.0tCLCL-15

 

 

 

7

t

ALE Low to WR Low

115

130

0.5t

-10(2)

0.5t

+5(2)

 

 

LLWL

 

 

 

 

CLCL

CLCL

 

 

8

t

ALE Low to RD Low

115

130

0.5t

-10(2)

0.5t

+5(2)

 

 

LLRL

 

 

 

 

CLCL

CLCL

 

 

9

tDVRH

Data Setup to RD High

45

 

 

45

 

 

 

10

tRLDV

Read Low to Data Valid

 

190

 

 

1.0tCLCL-60

 

11

tRHDX

Data Hold After RD High

0

 

 

0

 

 

 

329

2467X–AVR–06/11

ATmega128

Table 141. External Data Memory Characteristics, 2.7 - 5.5V, No Wait-state

(Continued)

 

 

 

 

 

4MHz Oscillator

 

Variable Oscillator

 

 

 

 

 

 

 

 

 

 

 

Symbol

Parameter

Min

Max

 

Min

Max

Unit

 

 

 

 

 

 

 

 

 

12

tRLRH

RD Pulse Width

235

 

 

1.0tCLCL-15

 

 

13

t

Data Setup to WR Low

105

 

 

0.5t -20(1)

 

 

 

DVWL

 

 

 

 

CLCL

 

 

14

tWHDX

Data Hold After WR High

235

 

 

1.0tCLCL-15

 

ns

15

tDVWH

Data Valid to WR High

250

 

 

1.0tCLCL

 

 

16

tWLWH

WR Pulse Width

235

 

 

1.0tCLCL-15

 

 

Notes: 1. This assumes 50% clock duty cycle. The half period is actually the high time of the external clock, XTAL1. 2. This assumes 50% clock duty cycle. The half period is actually the low time of the external clock, XTAL1.

Table 142. External Data Memory Characteristics, 2.7 - 5.5V, SRWn1 = 0, SRWn0 = 1

 

 

 

 

 

4MHz Oscillator

Variable Oscillator

 

 

 

 

 

 

 

 

 

 

Symbol

Parameter

Min

Max

Min

Max

Unit

 

 

 

 

 

 

 

 

0

1/tCLCL

Oscillator Frequency

 

 

0.0

8

MHz

10

tRLDV

Read Low to Data Valid

 

440

 

2.0tCLCL-60

 

12

tRLRH

RD Pulse Width

485

 

2.0tCLCL-15

 

ns

15

tDVWH

Data Valid to WR High

500

 

2.0tCLCL

 

 

 

 

16

tWLWH

WR Pulse Width

485

 

2.0tCLCL-15

 

 

Table 143. External Data Memory Characteristics, 2.7 - 5.5V, SRWn1 = 1, SRWn0 = 0

 

 

 

4MHz Oscillator

Variable Oscillator

 

 

 

 

 

 

 

 

 

 

Symbol

Parameter

Min

Max

Min

Max

Unit

 

 

 

 

 

 

 

 

0

1/tCLCL

Oscillator Frequency

 

 

0.0

8

MHz

10

tRLDV

Read Low to Data Valid

 

690

 

3.0tCLCL-60

 

12

tRLRH

RD Pulse Width

735

 

3.0tCLCL-15

 

ns

15

tDVWH

Data Valid to WR High

750

 

3.0tCLCL

 

 

 

 

16

tWLWH

WR Pulse Width

735

 

3.0tCLCL-15

 

 

Table 144. External Data Memory Characteristics, 2.7 - 5.5V, SRWn1 = 1, SRWn0 = 1

 

 

 

4MHz Oscillator

Variable Oscillator

 

 

 

 

 

 

 

 

 

 

Symbol

Parameter

Min

Max

Min

Max

Unit

 

 

 

 

 

 

 

 

0

1/tCLCL

Oscillator Frequency

 

 

0.0

8

MHz

10

tRLDV

Read Low to Data Valid

 

690

 

3.0tCLCL-60

 

12

tRLRH

RD Pulse Width

735

 

3.0tCLCL-15

 

 

14

tWHDX

Data Hold After WR High

485

 

2.0tCLCL-15

 

ns

15

tDVWH

Data Valid to WR High

750

 

3.0tCLCL

 

 

16

tWLWH

WR Pulse Width

735

 

3.0tCLCL-15

 

 

330

2467X–AVR–06/11

ATmega128

Figure 157. External Memory Timing (SRWn1 = 0, SRWn0 = 0

 

T1

T2

 

T3

T4

System Clock (CLKCPU)

 

 

 

 

 

 

 

1

 

 

 

ALE

 

 

 

 

 

 

 

4

7

 

 

A15:8

Prev. addr.

 

 

Address

 

 

 

 

 

15

 

 

 

2

3a

13

 

DA7:0

Prev. data

Address

XX

Data

 

 

 

6

 

16

14

 

 

 

 

WR

 

 

 

 

 

 

 

 

3b

9

11

DA7:0 (XMBK = 0)

 

Address

Data

 

 

 

5

 

10

 

 

 

 

8

12

 

RD

Figure 158. External Memory Timing (SRWn1 = 0, SRWn0 = 1)

 

T1

T2

 

T3

T4

T5

System Clock (CLKCPU)

 

 

 

 

 

 

 

 

1

 

 

 

 

ALE

 

 

 

 

 

 

 

 

4

7

 

 

 

A15:8

Prev. addr.

 

 

Address

 

 

 

 

 

 

 

15

 

 

 

2

3a

13

 

 

DA7:0

Prev. data

Address

XX

 

Data

 

 

 

6

 

 

16

14

 

 

 

 

 

WR

 

 

 

 

 

 

 

 

 

3b

 

9

11

DA7:0 (XMBK = 0)

 

Address

 

Data

 

 

 

5

 

10

 

 

 

 

 

8

 

12

 

RD

Write

Read

Write

Read

331

2467X–AVR–06/11

ATmega128

Figure 159. External Memory Timing (SRWn1 = 1, SRWn0 = 0)

 

T1

T2

 

T3

T4

T5

T6

System Clock (CLKCPU)

 

 

 

 

 

 

 

 

 

1

 

 

 

 

 

ALE

 

 

 

 

 

 

 

 

 

4

7

 

 

 

 

A15:8

Prev. addr.

 

 

 

Address

 

 

 

 

 

 

 

15

 

 

 

 

2

3a

13

 

 

 

DA7:0

Prev. data

Address

XX

 

Data

 

 

 

 

6

 

 

16

 

14

 

 

 

 

 

 

 

 

 

 

 

 

 

WR

 

 

 

 

 

 

 

 

 

 

3b

 

9

 

11

DA7:0 (XMBK = 0)

 

Address

 

Data

 

 

 

 

5

 

10

 

 

 

 

 

 

8

 

12

 

 

RD

Write

Read

Figure 160. External Memory Timing (SRWn1 = 1, SRWn0 = 1)(1)

 

T1

T2

 

T3

T4

T5

T6

T7

System Clock (CLKCPU)

 

 

 

 

 

 

 

 

 

 

1

 

 

 

 

 

 

ALE

 

 

 

 

 

 

 

 

 

 

4

7

 

 

 

 

 

A15:8

Prev. addr.

 

 

 

Address

 

 

 

 

 

 

 

 

15

 

 

 

 

 

2

3a

13

 

 

 

 

DA7:0

Prev. data

Address

XX

 

Data

 

 

 

 

 

6

 

 

16

 

 

14

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

WR

 

 

 

 

 

 

 

 

 

 

 

3b

 

9

 

11

 

DA7:0 (XMBK = 0)

 

Address

 

Data

 

 

 

 

 

5

 

10

 

 

 

 

 

 

 

8

 

12

 

 

 

RD

Read Write

Note: 1. The ALE pulse in the last period (T4-T7) is only present if the next instruction accesses the RAM (internal or external).

332

2467X–AVR–06/11

ATmega128

Typical

Characteristics

The following charts show typical behavior. These figures are not tested during manufacturing. All current consumption measurements are performed with all I/O pins configured as inputs and with internal pull-ups enabled. A sine wave generator with rail-to-rail output is used as clock source.

The power consumption in Power-down mode is independent of clock selection.

The current consumption is a function of several factors such as: operating voltage, operating frequency, loading of I/O pins, switching rate of I/O pins, code executed and ambient temperature. The dominating factors are operating voltage and frequency.

The current drawn from capacitive loaded pins may be estimated (for one pin) as CL*VCC*f where CL = load capacitance, VCC = operating voltage and f = average switching frequency of I/O pin.

The parts are characterized at frequencies higher than test limits. Parts are not guaranteed to function properly at frequencies higher than the ordering code indicates.

The difference between current consumption in Power-down mode with Watchdog Timer enabled and Power-down mode with Watchdog Timer disabled represents the differential current drawn by the Watchdog Timer.

Active Supply Current Figure 161. Active Supply Current vs. Frequency (0.1 - 1.0MHz)

 

3.5

 

 

 

 

 

 

 

 

 

 

 

3

 

 

 

 

 

 

 

 

 

5.5V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5.0V

 

2.5

 

 

 

 

 

 

 

 

 

4.5V

 

 

 

 

 

 

 

 

 

 

 

4.0V

(mA)

2

 

 

 

 

 

 

 

 

 

3.3V

 

 

 

 

 

 

 

 

 

2.7V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CC

1.5

 

 

 

 

 

 

 

 

 

 

I

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

 

 

 

 

 

 

 

 

 

 

 

0.5

 

 

 

 

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

 

 

 

 

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

Frequency (MHz)

333

2467X–AVR–06/11

ATmega128

Figure 162. Active Supply Current vs. Frequency (1 - 20MHz)

 

45

 

 

 

 

 

 

 

 

 

 

 

40

 

 

 

 

 

 

 

 

 

5.0V

 

35

 

 

 

 

 

 

 

 

 

4.5V

 

30

 

 

 

 

 

 

 

 

 

 

(mA)

25

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CC

20

 

 

 

 

 

 

4.0V

 

 

 

I

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

15

 

 

 

 

 

3.6V

 

 

 

 

 

 

 

 

 

3.3V

 

 

 

 

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3.0V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5

 

 

 

 

2.7V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

 

 

 

 

0

2

4

6

8

10

12

14

16

18

20

Frequency (MHz)

Figure 163. Active Supply Current vs. VCC (Internal RC Oscillator, 1MHz)

4

 

 

 

 

 

 

 

 

 

 

 

 

 

25

°C

3.5

 

 

 

 

 

-40

°C

 

 

 

 

 

85

°C

 

 

 

 

 

 

3

 

 

 

 

 

 

 

(mA)

 

 

 

 

 

 

 

CC

 

 

 

 

 

 

 

I

 

 

 

 

 

 

 

2.5

 

 

 

 

 

 

 

2

 

 

 

 

 

 

 

1.5

 

 

 

 

 

 

 

2.5

3

3.5

4

4.5

5

5.5

 

VCC (V)

334

2467X–AVR–06/11

ATmega128

Figure 164. Active Supply Current vs. VCC (Internal RC Oscillator, 2MHz)

 

8

 

 

 

 

 

 

 

 

 

 

 

 

 

-40 °C

 

7

 

 

 

 

 

25 °C

 

6

 

 

 

 

 

85 °C

 

 

 

 

 

 

 

 

5

 

 

 

 

 

 

(mA)

4

 

 

 

 

 

 

CC

 

 

 

 

 

 

 

I

 

 

 

 

 

 

 

 

3

 

 

 

 

 

 

 

2

 

 

 

 

 

 

 

1

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

2.5

3

3.5

4

4.5

5

5.5

VCC (V)

Figure 165. Active Supply Current vs. VCC (Internal RC Oscillator, 4MHz)

 

14

 

 

 

 

 

 

 

 

12

 

 

 

 

 

-40

°C

 

 

 

 

 

 

25

°C

 

 

 

 

 

 

 

85

°C

 

10

 

 

 

 

 

 

 

(mA)

8

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CC

6

 

 

 

 

 

 

 

I

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

4

 

 

 

 

 

 

 

 

2

 

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

 

2.5

3

3.5

4

4.5

5

5.5

 

VCC (V)

335

2467X–AVR–06/11

ATmega128

Figure 166. Active Supply Current vs. VCC (Internal RC Oscillator, 8MHz)

25

 

 

 

 

 

 

 

 

 

 

 

 

 

-40

°C

 

 

 

 

 

 

25

°C

20

 

 

 

 

 

85

°C

15

 

 

 

 

 

 

 

(mA)

 

 

 

 

 

 

 

CC

 

 

 

 

 

 

 

I

 

 

 

 

 

 

 

10

 

 

 

 

 

 

 

5

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

2.5

3

3.5

4

4.5

5

5.5

 

VCC (V)

Figure 167. Active Supply Current vs. VCC (32kHz External Oscillator)

 

140

 

 

 

 

 

 

 

120

 

 

 

 

 

25 °C

 

 

 

 

 

 

 

 

100

 

 

 

 

 

 

ICC (uA)

80

 

 

 

 

 

 

60

 

 

 

 

 

 

 

 

 

 

 

 

 

 

40

 

 

 

 

 

 

 

20

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

2.5

3

3.5

4

4.5

5

5.5

VCC (V)

336

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