metodIII

1.Power being the basis of civilization, all industry and transport are dependent upon power in some form.

2.That failure was due to the designer’s having been somewhat careless, although we must confess the conditions were unfavorable.

3.William Shockley’s having devoted all his life to the development of transistors is well known fact.

4.The current being controlled by the transistor, the transistor can act as an amplifier.

5.Connection of a battery’s positive terminal to the n-type material makes electrons be attracted to that terminal, holes in the p-type material moving toward the negative terminal.

Scientific Communication

I. Translate in the written form the following part of the text in which all about depletion region are described.

II.Complete the following sentences:

1.A transistor amplifier takes a small varying voltage between …..

2.In order to understand the work of transistor one should consider first …..

3.The electric field drives electrons from …..

4.Hardly any current flows in ….. diode.

5.The simplest transistor has three parts: …..

6.The transistor is designed so that …..

7.Bipolars remain popular for application …..

III.Add some facts concerning the history of transistors and use in speech some introductory phrases:

As far as I could understand, as far as I know, in fact, needless to say, to tell the truth, in my opinion, to my mind.

IV. State some factors that make transistors particularly important (in terms of what).

V. Write a summary on the two texts above, describe their subject-matter, objective and conclusion.

Unit 4

I. Practice the pronunciation of the following words and wordcombinations:

Wireless, breakthrough, unleash, specialist, plague, ubiquitous, equipment, bipolar, amplify, consumption, manufacturing, separate, dioxide, identical, conventional, excess, ideally, substrate, consume, compromise, allow, eliminate.

A Better Bipolar Transistor for Wireless IC’s (IBM's novel design promises high speeds and low power consumption)

Devices as the world unwires, the market for wireless communications chips has begun to soar. Now, a breakthrough by IBM researchers promises to unleash a new generation of low-power wireless-communications ICs by solving a problem that has plagued semiconductor specialists for years.

The problem revolves around the so-called mixed signal chips that are becoming ubiquitous in cellphones and wireless-equipped laptops and PDAs. These chips contain both ordinary field-effect transistors, of the sort found by the millions in ordinary CMOS ICs, and also bipolar transistors. The field-effect devices implement the logic, for example, communications protocols and signal processing. The bipolar transistors, meanwhile, amplify the radio signals going into and out of the antenna. Mixing the two types of devices on one chip makes for a compact and power-efficient product.

But, until recently, it also created a painful choice for designers. They could build their circuits either on wafers that minimize the power consumption and maximize the speed of the digital CMOS components or on wafers that give the fastest possible bipolar transistors.

In advanced CMOS manufacturing, devices are built in a very thin top layer of silicon, separated from the bottom silicon substrate by a layer of insulating silicon dioxide. CMOS devices built on these silicon-on-insulator (SOI) wafers use less power than identical ones built on conventional wafers.

On the other hand, the fastest bipolar transistors contain germanium in their bases, which lets them run in excess of 350 GHz, which is much faster than ordinary silicon bipolar devices can go. Built perpendicular to the substrate, they consist of the emitter on top, the base in the middle, and the collector at the bottom. Below the collector is a heavily doped region called the subcollector that provides a low-resistance path to the collector contact on the chip surface. This vertical structure allows the base to be very thin and to be doped with germanium to get the highest speeds. Ideally, designers would like to put these devices on the same SOI wafers as the digital CMOS devices. But to do that, the bipolar transistor must fit into the thin layer of silicon at the top of the chip. The basic problem is that the basic bipolar device is about 2 nm thick, with most of that thickness due to the subcollector. That's far too thick to build into an SOI wafer, where the top silicon layer is only about 0.1 nm thick.

The last attempts to build bipolar transistors on SOI wafers have turned the devices on their sides so that the emitter, base, and collector are built into the substrate. In these lateral transistors, the bases are thicker than those in the vertical devices and, most important, cannot be doped with germanium. As a result, they are slower and consume more power.

So to build the best possible bipolar device on SOI, the IBM researchers made a compromise. They made the emitter-base part of the transistor vertical, allowing the base to be doped with germanium. But they bent the device just below the base and eliminated the thick subcollector. But by adding a heavily doped region below the collector contact and placing the collector contact as close as possible to the rest of the device, they were able to achieve a low collector resistance. The collector was now thin enough to build into an SOI wafer and combine with the highest-performance CMOS circuits. The vertical emitter-base structure (box, center) of this bipolar transistor permits the base to be doped with germanium. It is the first structure to allow high-speed, low-power bipolar transistors on the same chip with fastest, lowest-power CMOS circuits.

The critical part is to have a vertical base-emitter structure for device speed, and to eliminate the thick subcollector layer so that the collector can fit into the thin silicon layer of an SOI wafer.

The result is a bipolar transistor that consumes only one-fifth the power of previous attempts to put lateral bipolar transistors onto SOI substrates. The feature sizes on the new device shrink to 100 nm from their present 160 nm and the thickness of the top silicon layer is reduced from 120 nm to 55 nm, the researchers expect the transistors to run at 200 GHz. That’s not as fast as the fastest devices, but it's done enough for most wireless communications applications.

The next step of semiconductor specialists is to show the potential benefits of the device by building more complicated circuits. They will continue to optimize the device even more so that they come closer and closer to the best they can do in bulk.

Vocabulary, Comprehension and Summary Writing

I. Check your understanding of the text answering the following questions:

1. What can you say about the market for wireless communications chips? 2. At what are scientists working now? 3. What problem do semiconductor specialists face at? 4. What are the so-called mixed signal chips? 5. What do the field-effect devices implement? 6. What is the function of the bipolar transistor? 7. What problem did specialist face at? 8. What semiconductor material are devices built in advanced CMOS manufacturing? 9. What are the main features of these devices? 10. What about the fastest bipolar transistors? 11. What can you say about the structure of these fastest bipolar transistors? 12. What does this vertical structure allow? 13. Did scientist manage to put these devices on the same SOI Wafers? 14. What were the past attempts made by designers in building bipolar transistors? 15. What compromise did scientists have to come to build the best possible bipolar device on SOI? 16. What was the result?

II. Write English equivalents of the following word combinations:

Створювати нові технології, область електроніки, мобільні телефони, відігравати головну роль, розуміти складні процеси, прямий доказ, важке завдання, з іншого боку, зменшити споживання електроенергії, досягти низького опору колектора, на тій самій мікросхемі.

III. Give Definitions of the following words:

Physicist, semiconductor, microchip, bipolar, transistor, subcollector, amplifier, wireless communication technology.

low collector resistance, a breakthrough, phone, previously, versatile, new generation, circuits, consume, benefits, heaving doped region, adding.

V. From the following choose the word that is opposite in the meaning to the bold one:

unique – strange, common, varying, natural;

contrast – opposition, difference, similarity, comparison; stable – hard, steady, fixed, vacillating;

combine – agree, connect, unite, separate; accomplish – complete, fulfill, realize, develop ; attract – draw towards, fascinate, revolt; artificial – professional, man-made, natural.

VI. Give English equivalents for the following Ukrainian word combinations:

Інформаційний пошук, інформаційний обмін, короткий опис, коротке повідомлення, первинні публікації, електронні мікросхеми котрі усюди використовуються, мінімізування споживання енергії, вбудований перпендикулярно до підложи.

VII. Agree or disagree with the statements given below, use the following phrases:

Nothing of the kind, of course, certainly, sure, indeed, far from it, on the contrary, on no account.

1. As the world unwires, the market for wireless communications chips has begun increasing. 2. The problem of the so-called mixed signal chips has not become ubiquitous in cellphones on wireless-equipped laptops up to now. 3. The designers of IBM would like to put the ordinary field-effect transistors and also bipolar transistors on the same silicon-on-insulator wafers as the digital CMOS devices. 4. To build the best possible bipolar device on silicon-on-insulator, the IBM researchers could not come to a compromise. 5. CMOS devices built on the silicon-on-insulator wafers use more power than identical ones built on conventional wafers. 6. The function of the bipolar transistors is to implement the logical communications protocols and signal processing. 7. The fastest bipolar transistors contain germanium in their bases.

VIII. State the difference between the terms:

1.A new generation of low-power wireless-communications IC’s and complementary metal-oxide semiconductor IC’s.

2.Field-effect transistors and bipolar transistors.

IX. Complete the following sentences:

1.The bipolar transistors amplify ….. . 2. The fastest bipolar transistors contain

…... 3. The IBM researchers made ….. . 4. CMOS devices built on the silicon-on- insulator wafers use less ….. . 5. The vertical emitter-base structure of the bipolar transistor permits the base ….. . 6. The lateral transistors consume ….. . 7. The vertical emitter-base structure allows the high-speed, low power bipolar transistor to be placed on the same ….. .

X.Explain why:

1.The scientists of wireless communications chips technology are busy with the development of the so-called mixed signal chips.

2.The vertical structure to the substrate allows to get the highest speed.

3.The lateral transistors are slower and consume more power than the vertical

ones.

XI. Choose the one word that best keeps the meaning of the original sentence:

1.In selecting a method and performing an analysis, several important decisions must be made.

a)determining

b)choosing

c)understanding

2.The first step of IBM researchers in the development of new generation of low-power wireless-communications IC’s was to learn as much as possible about the compatibility of these two devices they had faced.

a)expected

b)analyzed

c)met

3.Specifically, one need to know what questions are being asked in order to determine what information is needed to answer those questions.

a)particularly

b)naturally

c)definitely

XII. Translate the following sentences, pay attention to the meanings of the word combinations with the word “all”.

at all – взагалі;

above all – перш за все, головним чином; after all – кінець кінцем;

all over – всюди;

first of all – перш за все.

1.In these lateral transistors, the bases are thicker than those in the vertical devices and, most important, cannot be doped with germanium at all.

2.Firs of all, semiconductor researchers had to discuss the compatibility of these two devices, that is, the main objective of their conference.

3.The names of American scientists J. Bardeen and W. Brattain are known all over the world.

4.After all, the vertical device is the first structure to allow high-speed, lowpower bipolar transistors on the same chip with the fastest, low-power CMOS circuits.

5.The aim of writing this article has been, above all, to present a better bipolar transistor foe wireless IC’s.

XIII. Match the following English words and word-combinations with the

XIV. Translate the following sentences; be sure that you know the meaning of these words:

since – з того часу, як, відтоді;

since – оскільки, через те що, тому що.

1. Since a binary number must be either 0 or 1, the two numbers are said to be complements of each other. 2. Since 1920’s the triode has become extensively used for amplification in radio work. 3. Since on external d.c. supply is connected to a p-n junction, the potential barrier at depletion layer is either increased or decreased depending on the polarity of external supply or bias. 4. Since the circuit consisted of only resistors and transistors, it was named RTL. 5. Even if the supply polarity were reserved there would still be no current following since the source junction would then be reverse-biased. 6. Since the vertical structure allows the base to be doped with germanium, it can get the highest speeds. 7. Since the pressure change is relatively small, the volume change should be relatively small.

XV. Combine each set of 3 sentences into a single one. Make necessary rearrangements; use “addition to”, “along with”, “besides” to begin resultant sentences.

1.The problem revolves around the so-called mixed signal chips. These chips contain both ordinary field-effect transistors and also bipolar transistors. Mixing the two types of device on one chip makes for a compact and power-efficient product.

2.The bipolar junction transistor consists of two p-n junctions formed by a sandwich of doped semiconductor material. A thin layer of slightly doped p-type material (the base) is sandwiched between two thicker layers of n-type material (emitter and collector). The p-type base layer may be as may be as thin as one micron.

XVI. Read the text, find the part of it dealing with the types of the fieldeffect transistors, translate it in the written form, and write its summary using the words and phrases given in the previous unit (Unit 1).

The Junction Field-Effect Transistor Action

It was previously emphasized that one of the main properties of the bipolar transistor is that it is a current-controlled amplifying device; the output current is controlled by a small input current. In the case of the field-effect transistor (FET) it is the input voltage which controls the output current. The current drawn by the input is usually negligible. This is a great advantage where the signal comes from a device such as capacitor microphone or piezoelectric transducer, which is unable to supply a significant current. FET’s are basically of two types: the junction fieldeffect transistor (JFET) and the insulated gate field-effect transistor (IGFET). The latter is more commonly known by a name metal-oxide semiconductor field-effect transistor (MOSFET).

At a point along the bar a region of p-type silicon forms a p-n junction. In normal operation, the junction is reverse-biased. The lower contact on the bar is called the source and the upper contact the drain. The electron current flows from source to drain and is controlled by the voltage applied to the p-region called the gate.

An alternative type of construction is the p-channel device where the gate is made of n-type material.

The operation of the JFET depends upon variations in the size of the depletion layer at the reverse-biased gate junction. The p-type gate is much more heavily doped than the n-type bar, so that the depletion region exists almost entirely in the bar. The gate carries a negative bias voltage relative to the source which give rise to the particular shape of the depletion region: this is wider at the top than the bottom. The wider the depletion layer, the narrower the channel there is available for the flow of electrons from source to drain, since the depletion region itself being devoid of current carries, behaves like an insulator.

1. A new generation of low-power wireless-communications IC’s may appear in the nearest future if the problem connected with the so-called mixed signal chips is solved. 2. The field-effect devices implement the logical communication protocols and signal processing. 3. The bipolar transistors amplify the radio signals going into and out of the antenna. 4. Mixing the two types of devices on one chip makes for a compact and power-efficient product. 5. CMOS devices built on the silicon- on-insulator wafers use less power than identical ones built on conventional wafers.

II.Open the brackets and choose the correct form of the verb:

1.We analyzed the data obtained after we (finished, had finished) our experiments. 2. We (discuss, will discuss) all the problems tomorrow. 3. If these two types of devices (were mixed, will be mixed) a compact and power-efficient product might be created. 4. Amplitude statistical characteristics (have discuss, have been discuss) already when considering measurement errors. 5. The exact operation of some devices (cannot rely on, cannot be relied on) due to their being slightly influenced by the changes in temperature. 6. If the circuit (possesses, will possess) no resistance, the back e.m.f. will be constant in magnitude. 7. The semiconductor specialists proved that this vertical structure (allows allowed) the base to be doped with germanium to get the highest speeds. 8. By adding a heavily doped region below the collector contact the scientists believed that they (will achieve, would achieve, achieve) a low collector resistance. 9. The students (did, were doing) the laboratory works from 10 o’clock till 12.

III.State the voice, from and function of the Infinitives in the sentences below. Translate them into Ukrainian.

1.To explain these difficulties was the task of first importance. 2. The need to boost interest in science education is recognized at all levels in our country. 3. The computer can be programmed to manipulate the information rapidly in a variety of ways and to display selected information in different styles, lists, tables and graphs.

4.By using the computer as a tool to find answers to their own questions students begin to develop real problem to be solved immediately. 5. The vertical structure allows high-speed, low-power bipolar transistors to be placed on the same chip with the fastest lowest-power CMOS circuits. 6. The scientists could build their circuits on wafer that a vertical base-emitter structure for device speed, and to eliminate the thick subcollector layer. 8. The computer is contain to be getting faster and faster.

IV. Paraphrase the following sentences; use the Complex Subject or Complex Object instead of subordinate clauses.

1. We know that the problem connected with the development of low-power wireless-communications IC’s will be solved soon. 2. The specialists believe that the vertical structure will be more variable. 3. It is known that the bases in the lateral transistors are thicker than those in the vertical devices. 4. It is certain that these new computers will be used to tackle the most complicated problems. 5. It