IKW40N65H5, IKP40N65H5

High speed switching series fifth generation

Table of Contents

Description . . . . . . . . . . . . . . . . . . . .

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Table of Contents . . . . . . . . . . . . . . .

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Maximum Ratings . . . . . . . . . . . . . . . .

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Thermal Resistance . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical Characteristics . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical Characteristics Diagrams . .

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Package Drawing PG-TO247-pinGCE

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

Package Drawing PG-TO220-3 . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16

Testing Conditions . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17

Revision History . . . . . . . . . . . . . . . . .

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Disclaimer . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18

3

Rev. 1.2, 2013-12-18

Parameter

Symbol

Value

Unit

Collector-emitter voltage

VCE

650

V

DC collector current, limited by Tvjmax

TC = 25°C

IC

74.0

A

TC = 100°C

46.0

Pulsed collector current, tp limited by Tvjmax

ICpuls

120.0

A

Turn off safe operating area VCE ≤ 650V, Tvj ≤ 175°C

-

120.0

A

Diode forward current, limited by Tvjmax

TC = 25°C

IF

36.0

A

TC = 100°C

21.0

Diode pulsed current, tp limited by Tvjmax

IFpuls

120.0

A

Gate-emitter voltage

VGE

±20

V

Transient Gate-emitter voltage (tp ≤ 10µs, D < 0.010)

±30

Power dissipation TC = 25°C

Ptot

255.0

W

Power dissipation TC = 100°C

120.0

Operating junction temperature

Tvj

-40...+175

°C

Storage temperature

Tstg

-55...+150

°C

Soldering temperature,

wave soldering 1.6 mm (0.063 in.) from case for 10s

PG-TO247-pinGCE

260

°C

PG-TO220-3

260

Mounting torque, M3 screw

M

0.6

Nm

Maximum of mounting processes: 3

Thermal Resistance

Parameter

Symbol

Conditions

Max. Value

Unit

Characteristic

IGBT thermal resistance,

Rth(j-c)

0.60

K/W

junction - case

Diode thermal resistance,

Rth(j-c)

1.80

K/W

junction - case

Thermal resistance

Rth(j-a)

PG-TO247-pinGCE

40

K/W

junction - ambient

PG-TO220-3

62

4

Rev. 1.2, 2013-12-18

Parameter

Symbol

Conditions

Value

Unit

min.

typ.

max.

Static Characteristic

Collector-emitter breakdown voltage

V(BR)CES

VGE = 0V, IC = 0.20mA

650

-

-

V

VGE = 15.0V, IC = 40.0A

Collector-emitter saturation voltage

VCEsat

Tvj = 25°C

-

1.65

2.10

V

Tvj = 125°C

-

1.85

-

Tvj = 175°C

-

1.95

-

VGE = 0V, IF = 20.0A

Diode forward voltage

VF

Tvj = 25°C

-

1.45

1.80

V

Tvj = 125°C

-

1.40

-

Tvj = 175°C

-

1.40

-

Gate-emitter threshold voltage

VGE(th)

IC = 0.40mA, VCE = VGE

3.2

4.0

4.8

V

VCE = 650V, VGE = 0V

Zero gate voltage collector current

ICES

Tvj = 25°C

-

-

40.0

µA

Tvj = 175°C

-

-

4000.0

Gate-emitter leakage current

IGES

VCE = 0V, VGE = 20V

-

-

100

nA

Transconductance

gfs

VCE = 20V, IC = 40.0A

-

50.0

-

S

Electrical Characteristic, atTvj= 25°C, unless otherwise specified

Parameter

Symbol

Conditions

Value

Unit

min.

typ.

max.

Dynamic Characteristic

Input capacitance

Cies

-

2500

-

Output capacitance

Coes

VCE = 25V, VGE = 0V, f = 1MHz

-

50

-

pF

Reverse transfer capacitance

Cres

-

9

-

Gate charge

QG

VCC = 520V, IC = 40.0A,

-

95.0

-

nC

VGE = 15V

Internal emitter inductance

LE

PG-TO247-pinGCE

13.0

measured 5mm (0.197 in.) from

-

-

nH

PG-TO220-3

case

Switching Characteristic, Inductive Load

Parameter

Symbol

Conditions

Value

Unit

min.

typ.

max.

IGBT Characteristic, atTvj= 25°C

Turn-on delay time

td(on)

Tvj = 25°C,

-

22

-

ns

Rise time

tr

VCC = 400V, IC = 20.0A,

-

12

-

ns

VGE = 0.0/15.0V,

Turn-off delay time

td(off)

-

165

-

ns

rG = 15.0Ω, Lσ = 30nH,

Fall time

tf

Cσ = 30pF

-

13

-

ns

Lσ, Cσ from Fig. E

Turn-on energy

Eon

-

0.39

-

mJ

Energy losses include “tail” and

Turn-off energy

Eoff

diode reverse recovery.

-

0.12

-

mJ

Total switching energy

Ets

-

0.51

-

mJ

5

Rev. 1.2, 2013-12-18

Turn-on delay time

td(on)

Tvj = 25°C,

-

19

-

ns

Rise time

tr

VCC = 400V, IC = 5.0A,

-

4

-

ns

VGE = 0.0/15.0V,

Turn-off delay time

td(off)

-

190

-

ns

rG = 15.0Ω, Lσ = 30nH,

Fall time

tf

Cσ = 30pF

-

24

-

ns

Lσ, Cσ from Fig. E

Turn-on energy

Eon

-

0.09

-

mJ

Energy losses include “tail” and

Turn-off energy

Eoff

diode reverse recovery.

-

0.05

-

mJ

Total switching energy

Ets

-

0.14

-

mJ

Diode Characteristic, atTvj= 25°C

Diode reverse recovery time

trr

Tvj = 25°C,

-

62

-

ns

Diode reverse recovery charge

Qrr

VR = 400V,

-

0.45

-

µC

IF = 20.0A,

Irrm

Diode peak reverse recovery current

diF/dt = 1000A/µs

-

12.5

-

A

Diode peak rate of fall of reverse

dirr/dt

-

-290

-

A/µs

recovery current during tb

Diode reverse recovery time

trr

Tvj = 25°C,

-

30

-

ns

Diode reverse recovery charge

Qrr

VR = 400V,

-

0.22

-

µC

IF = 5.0A,

Irrm

Diode peak reverse recovery current

diF/dt = 1000A/µs

-

10.7

-

A

Diode peak rate of fall of reverse

dirr/dt

-

-700

-

A/µs

recovery current during tb

Switching Characteristic, Inductive Load

Parameter

Symbol

Conditions

Value

Unit

min.

typ.

max.

IGBT Characteristic, atTvj= 150°C

Turn-on delay time

td(on)

Tvj = 150°C,

-

20

-

ns

Rise time

tr

VCC = 400V, IC = 20.0A,

-

12

-

ns

VGE = 0.0/15.0V,

Turn-off delay time

td(off)

-

195

-

ns

rG = 15.0Ω, Lσ = 30nH,

Fall time

tf

Cσ = 30pF

-

22

-

ns

Lσ, Cσ from Fig. E

Turn-on energy

Eon

-

0.54

-

mJ

Energy losses include “tail” and

Turn-off energy

Eoff

diode reverse recovery.

-

0.20

-

mJ

Total switching energy

Ets

-

0.74

-

mJ

Turn-on delay time

td(on)

Tvj = 150°C,

-

19

-

ns

Rise time

tr

VCC = 400V, IC = 5.0A,

-

5

-

ns

VGE = 0.0/15.0V,

Turn-off delay time

td(off)

-

240

-

ns

rG = 15.0Ω, Lσ = 30nH,

Fall time

tf

Cσ = 30pF

-

33

-

ns

Lσ, Cσ from Fig. E

Turn-on energy

Eon

-

0.15

-

mJ

Energy losses include “tail” and

Turn-off energy

Eoff

diode reverse recovery.

-

0.07

-

mJ

Total switching energy

Ets

-

0.22

-

mJ

6

Rev. 1.2, 2013-12-18

Diode reverse recovery time

trr

Tvj = 150°C,

-

90

-

ns

VR = 400V,

Diode reverse recovery charge

Qrr

-

1.00

-

µC

IF = 20.0A,

Irrm

Diode peak reverse recovery current

diF/dt = 1000A/µs

-

17.5

-

A

Diode peak rate of fall of reverse

dirr/dt

-

-220

-

A/µs

recovery current during tb

Diode reverse recovery time

trr

Tvj = 150°C,

-

52

-

ns

Diode reverse recovery charge

Qrr

VR = 400V,

-

0.49

-

µC

IF = 5.0A,

Irrm

Diode peak reverse recovery current

diF/dt = 1000A/µs

-

15.0

-

A

Diode peak rate of fall of reverse

dirr/dt

-

-430

-

A/µs

recovery current during tb

7

Rev. 1.2, 2013-12-18

275

100

250

225

IC[A]CURRENTCOLLECTOR,

Ptot[W]DISSIPATIONPOWER,

200

10

175

tp=1µs

150

10µs

50µs

125

100µs

100

1

200µs

75

500µs

50

DC

25

0.1

0

1

10

100

1000

25

50

75

100

125

150

175

VCE, COLLECTOR-EMITTER VOLTAGE [V]

TC, CASE TEMPERATURE [°C]

Figure 1. Forward bias safe operating area

Figure 2. Power dissipation as a function of case

(D=0, TC=25°C, Tvj£175°C; VGE=15V.

temperature

Recommended use at VGE³7.5V)

(Tvj£175°C)

80

120

70

100

C[A]CURRENTCOLLECTOR,

60

C[A]CURRENTCOLLECTOR,

VGE=20V

18V

50

80

15V

12V

40

60

10V

8V

30

40

7V

20

6V

I

I

20

5V

10

0

0

25

50

75

100

125

150

175

0

1

2

3

4

5

TC, CASE TEMPERATURE [°C]

VCE, COLLECTOR-EMITTER VOLTAGE [V]

Figure 3. Collector current as a function of case

Figure 4. Typical output characteristic

temperature

(Tvj=25°C)

(VGE³15V, Tvj£175°C)

8

Rev. 1.2, 2013-12-18

120

120

Tj=25°C

Tj=150°C

100

100

C[A]CURRENTCOLLECTOR,

VGE=20V

C[A]CURRENTCOLLECTOR,

18V

80

15V

80

12V

60

10V

60

8V

40

7V

40

6V

I

I

20

5V

20

0

0

0

1

2

3

4

5

4.5

5.0

5.5

6.0

6.5

7.0

7.5

8.0

8.5

VCE, COLLECTOR-EMITTER VOLTAGE [V]

VGE, GATE-EMITTER VOLTAGE [V]

Figure 5. Typical output characteristic

Figure 6. Typical transfer characteristic

(Tvj=150°C)

(VCE=20V)

2.50

1000

IC=10A

td(off)

COLLECTOR,-[V]SATURATIONEMITTER

IC=20A

tf

2.25

IC=40A

td(on)

tr

2.00

1.75

t[ns]TIMESSWITCHING,

100

1.50

1.25

10

1.00

CEsat

0.75

V

0.50

1

0

25

50

75

100

125

150

175

0

20

40

60

80

100

120

Tvj, JUNCTION TEMPERATURE [°C]

IC, COLLECTOR CURRENT [A]

Figure 7. Typical collector-emitter saturation voltage as

Figure 8. Typical switching times as a function of

a function of junction temperature

collector current

(VGE=15V)

(inductive load, Tvj=150°C, VCE=400V,

VGE=15/0V, rG=15Ω, Dynamic test circuit in

9

Figure E)

Rev. 1.2, 2013-12-18

1000

1000

td(off)

td(off)

tf

tf

td(on)

td(on)

tr

tr

t[ns]TIMESSWITCHING,

100

t[ns]TIMESSWITCHING,

100

10

10

1

1

5

15

25

35

45

55

65

75

85

25

50

75

100

125

150

175

rG, GATE RESISTOR [Ω]

Tvj, JUNCTION TEMPERATURE [°C]

Figure 9. Typical switching times as a function of gate

Figure 10. Typical switching times as a function of

resistor

junction temperature

(inductive load, Tvj=150°C, VCE=400V,

(inductive load, VCE=400V, VGE=15/0V,

VGE=15/0V, IC=20A,Dynamic test circuit in

IC=20A, rG=15Ω,Dynamic test circuit in

Figure E)

Figure E)

5.5

8

typ.

Eoff

GE(th)GATE,-[V]VOLTAGETHRESHOLDEMITTER

5.0

min.

Eon

max.

7

Ets

4.5

E[mJ]LOSSESENERGYSWITCHING,

6

4.0

5

3.5

4

3.0

2.5

3

2.0

2

1.5

1

V

1.0

0

0

25

50

75

100

125

150

0

20

40

60

80

100

120

Tvj, JUNCTION TEMPERATURE [°C]

IC, COLLECTOR CURRENT [A]

Figure 11. Gate-emitter threshold voltage as a function

Figure 12. Typical switching energy losses as a

of junction temperature

function of collector current

(IC=0.4mA)

(inductive load, Tvj=150°C, VCE=400V,

VGE=15/0V, rG=15Ω,Dynamic test circuit in

10

Figure E)

Rev. 1.2, 2013-12-18