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даташитина PIC 12F683 .pdf

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PIC12F683

15.0ELECTRICAL SPECIFICATIONS

Absolute Maximum Ratings(†)

Ambient temperature under bias..........................................................................................................			-40° to +125°C
Storage temperature ........................................................................................................................			-65°C to +150°C
Voltage on VDD with respect to VSS ...................................................................................................			-0.3V to +6.5V
			-0.3V to +13.5V
Voltage on	MCLR	...............................................................................................with respect to Vss
Voltage on all other pins with respect to VSS ...........................................................................			-0.3V to (VDD + 0.3V)
Total power dissipation(1) ...............................................................................................................................			800 mW
Maximum current out of VSS pin ......................................................................................................................			95 mA
Maximum current into VDD pin .........................................................................................................................			95 mA
Input clamp current, IIK (VI < 0 or VI > VDD)...............................................................................................................			± 20 mA
Output clamp current, IOK (Vo < 0 or Vo >VDD).........................................................................................................			± 20 mA
Maximum output current sunk by any I/O pin....................................................................................................			25 mA
Maximum output current sourced by any I/O pin ..............................................................................................			25 mA
Maximum current sunk by GPIO...................................................................................................			................... 90 mA
Maximum current sourced GPIO...................................................................................................			................... 90 mA

Note 1: Power dissipation is calculated as follows: PDIS = VDD x {IDD – ∑ IOH} + ∑ {(VDD – VOH) x IOH} + ∑(VOl x IOL).

† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure above maximum rating conditions for extended periods may affect device reliability.

♥ 2007 Microchip Technology Inc.

DS41211D-page 115

PIC12F683

FIGURE 15-1: PIC12F683 VOLTAGE-FREQUENCY GRAPH, -40°C ≤ TA ≤ +125°C

VDD (V)

5.5

5.0

4.5

4.0

3.5

3.0

2.5

2.0

Frequency (MHz)

Note 1: The shaded region indicates the permissible combinations of voltage and frequency.

FIGURE 15-2: HFINTOSC FREQUENCY ACCURACY OVER DEVICE VDD AND TEMPERATURE

	125
				± 5%
	85
°C)	60			± 2%
(
Temperature
	25			± 1%

	0
	2.0	2.5	3.0	3.5	4.0	4.5	5.0	5.5

VDD (V)

DS41211D-page 116

♥ 2007 Microchip Technology Inc.

PIC12F683

15.1DC Characteristics: PIC12F683-I (Industrial)

PIC12F683-E (Extended)

			Standard Operating Conditions (unless otherwise stated)
DC CHARACTERISTICS			Operating temperature -40°C ≤ TA ≤ +85°C for industrial
						-40°C ≤ TA ≤ +125°C for extended

Param	Sym	Characteristic	Min	Typ†	Max	Units	Conditions
No.	Sym	Characteristic	Min	Typ†	Max	Units	Conditions
No.


	VDD	Supply Voltage	2.0	—	5.5	V	FOSC < = 8 MHz: HFINTOSC, EC
D001			2.0	—	5.5	V	FOSC < = 4 MHz
D001C			3.0	—	5.5	V	FOSC < = 10 MHz
D001D			4.5	—	5.5	V	FOSC < = 20 MHz

D002*	VDR	RAM Data Retention	1.5	—	—	V	Device in Sleep mode
		Voltage(1)
D003	VPOR	VDD Start Voltage to	—	VSS	—	V	See Section 12.3.1 “Power-on Reset”
		ensure internal Power-on					for details.
		Reset signal

D004*	SVDD	VDD Rise Rate to ensure	0.05	—	—	V/ms	See Section 12.3.1 “Power-on Reset”
		internal Power-on Reset					for details.
		signal

*These parameters are characterized but not tested.

†Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested.

Note 1: This is the limit to which VDD can be lowered in Sleep mode without losing RAM data.

♥ 2007 Microchip Technology Inc.

DS41211D-page 117

PIC12F683

15.2DC Characteristics: PIC12F683-I (Industrial)

PIC12F683-E (Extended)

		Standard Operating Conditions (unless otherwise stated)
DC CHARACTERISTICS		Operating temperature			-40°C ≤ TA ≤ +85°C for industrial
					-40°C ≤ TA ≤ +125°C for extended

Param	Device Characteristics	Min	Typ†	Max	Units		Conditions
Param
No.						VDD	Note
No.



D010	Supply Current (IDD)(1, 2)	—	11	16	μA	2.0	FOSC = 32 kHz
							LP Oscillator mode
		—	18	28	μA	3.0	LP Oscillator mode
		—	35	54	μA	5.0
D011*		—	140	240	μA	2.0	FOSC = 1 MHz
							XT Oscillator mode
		—	220	380	μA	3.0	XT Oscillator mode
		—	380	550	μA	5.0
D012		—	260	360	μA	2.0	FOSC = 4 MHz
							XT Oscillator mode
		—	420	650	μA	3.0	XT Oscillator mode
		—	0.8	1.1	mA	5.0

D013*		—	130	220	μA	2.0	FOSC = 1 MHz
							EC Oscillator mode
		—	215	360	μA	3.0	EC Oscillator mode
		—	360	520	μA	5.0
D014		—	220	340	μA	2.0	FOSC = 4 MHz
							EC Oscillator mode
		—	375	550	μA	3.0	EC Oscillator mode
		—	0.65	1.0	mA	5.0

D015		—	8	20	μA	2.0	FOSC = 31 kHz
							LFINTOSC mode
		—	16	40	μA	3.0	LFINTOSC mode
		—	31	65	μA	5.0
D016*		—	340	450	μA	2.0	FOSC = 4 MHz
							HFINTOSC mode
		—	500	700	μA	3.0	HFINTOSC mode
		—	0.8	1.2	mA	5.0

D017		—	410	650	μA	2.0	FOSC = 8 MHz
							HFINTOSC mode
		—	700	950	μA	3.0	HFINTOSC mode
		—	1.30	1.65	mA	5.0

D018		—	230	400	μA	2.0	FOSC = 4 MHz
							EXTRC mode(3)
		—	400	680	μA	3.0	EXTRC mode(3)
		—	0.63	1.1	mA	5.0

D019		—	2.6	3.25	mA	4.5	FOSC = 20 MHz
							HS Oscillator mode
		—	2.8	3.35	mA	5.0	HS Oscillator mode
		—	2.8	3.35	mA	5.0

*These parameters are characterized but not tested.

†Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested.

Note 1: The test conditions for all IDD measurements in active operation mode are: OSC1 = external square wave, from rail-to-rail; all I/O pins tri-stated, pulled to VDD; MCLR = VDD; WDT disabled.

2:The supply current is mainly a function of the operating voltage and frequency. Other factors, such as I/O pin loading and switching rate, oscillator type, internal code execution pattern and temperature, also have an impact on the current consumption.

3:For RC oscillator configurations, current through REXT is not included. The current through the resistor can be extended by the formula IR = VDD/2REXT (mA) with REXT in kΩ.

DS41211D-page 118

♥ 2007 Microchip Technology Inc.

PIC12F683

15.3DC Characteristics: PIC12F683-I (Industrial)

DC CHARACTERISTICS		Standard Operating Conditions (unless otherwise stated)
DC CHARACTERISTICS		Operating temperature			-40°C ≤ TA ≤ +85°C for industrial
		Operating temperature			-40°C ≤ TA ≤ +85°C for industrial

Param	Device Characteristics	Min	Typ†	Max	Units		Conditions
Param
No.						VDD	Note
No.



D020	Power-down Base	—	0.05	1.2	μA	2.0	WDT, BOR, Comparators, VREF and
	Current(IPD)(2)						T1OSC disabled
	Current(IPD)(2)	—	0.15	1.5	μA	3.0	T1OSC disabled
		—	0.15	1.5	μA	3.0
		—	0.35	1.8	μA	5.0

		—	150	500	nA	3.0	-40°C ≤ TA ≤ +25°C
D021		—	1.0	2.2	μA	2.0	WDT Current(1)
		—	2.0	4.0	μA	3.0

		—	3.0	7.0	μA	5.0
D022		—	42	60	μA	3.0	BOR Current(1)
		—	85	122	μA	5.0

D023		—	32	45	μA	2.0	Comparator Current(1), both
		—	60	78	μA	3.0	comparators enabled
		—	120	160	μA	5.0

D024		—	30	36	μA	2.0	CVREF Current(1) (high range)
		—	45	55	μA	3.0
		—	75	95	μA	5.0

D025*		—	39	47	μA	2.0	CVREF Current(1) (low range)
		—	59	72	μA	3.0
		—	98	124	μA	5.0

D026		—	4.5	7.0	μA	2.0	T1OSC Current(1), 32.768 kHz
		—	5.0	8.0	μA	3.0
		—	6.0	12	μA	5.0

D027		—	0.30	1.6	μA	3.0	A/D Current(1), no conversion in
		—	0.36	1.9	μA	5.0	progress

*These parameters are characterized but not tested.

†Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested.

Note 1: The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this peripheral is enabled. The peripheral current can be determined by subtracting the base IDD or IPD current from this limit. Max values should be used when calculating total current consumption.

2:The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to VDD.

♥ 2007 Microchip Technology Inc.

DS41211D-page 119

PIC12F683

15.4DC Characteristics: PIC12F683-E (Extended)

DC CHARACTERISTICS		Standard Operating Conditions (unless otherwise stated)
DC CHARACTERISTICS		Operating temperature			-40°C ≤ TA ≤ +125°C for extended
		Operating temperature			-40°C ≤ TA ≤ +125°C for extended

Param	Device Characteristics	Min	Typ†	Max	Units		Conditions
Param
No.						VDD	Note
No.



D020E	Power-down Base	—	0.05	9	μA	2.0	WDT, BOR, Comparators, VREF and
	Current (IPD)(2)						T1OSC disabled
	Current (IPD)(2)	—	0.15	11	μA	3.0	T1OSC disabled
		—	0.35	15	μA	5.0
D021E		—	1	17.5	μA	2.0	WDT Current(1)
		—	2	19	μA	3.0

		—	3	22	μA	5.0
D022E		—	42	65	μA	3.0	BOR Current(1)
		—	85	127	μA	5.0

D023E		—	32	45	μA	2.0	Comparator Current(1), both
		—	60	78	μA	3.0	comparators enabled
		—	120	160	μA	5.0

D024E		—	30	70	μA	2.0	CVREF Current(1) (high range)
		—	45	90	μA	3.0
		—	75	120	μA	5.0

D025E*		—	39	91	μA	2.0	CVREF Current(1) (low range)
		—	59	117	μA	3.0
		—	98	156	μA	5.0

D026E		—	4.5	25	μA	2.0	T1OSC Current(1), 32.768 kHz
		—	5	30	μA	3.0
		—	6	40	μA	5.0

D027E		—	0.30	12	μA	3.0	A/D Current(1), no conversion in
		—	0.36	16	μA	5.0	progress

*These parameters are characterized but not tested.

†Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested.

2:The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to VDD.

DS41211D-page 120

♥ 2007 Microchip Technology Inc.

PIC12F683

15.5DC Characteristics: PIC12F683-I (Industrial)

PIC12F683-E (Extended)

					Standard Operating Conditions (unless otherwise stated)
DC CHARACTERISTICS					Operating temperature		-40°C ≤ TA ≤ +85°C for industrial
							-40°C ≤ TA ≤ +125°C for extended

Param	Sym			Characteristic	Min	Typ†	Max	Units	Conditions
No.	Sym			Characteristic	Min	Typ†	Max	Units	Conditions
No.


	VIL		Input Low Voltage
			I/O Port:
D030			with TTL buffer		Vss	—	0.8	V	4.5V ≤ VDD ≤ 5.5V
D030A					Vss	—	0.15 VDD	V	2.0V ≤ VDD ≤ 4.5V
D031			with Schmitt Trigger buffer		Vss	—	0.2 VDD	V	2.0V ≤ VDD ≤ 5.5V
D032				OSC1 (RC mode)(1)	VSS	—	0.2 VDD	V
D032			MCLR,	OSC1 (RC mode)(1)	VSS	—	0.2 VDD	V
D033		OSC1 (XT and LP modes)			VSS	—	0.3	V
D033A		OSC1 (HS mode)			VSS	—	0.3 VDD	V

	VIH		Input High Voltage
			I/O ports:			—
D040			with TTL buffer		2.0	—	VDD	V	4.5V ≤ VDD ≤ 5.5V
D040A					0.25 VDD + 0.8	—	VDD	V	2.0V ≤ VDD ≤ 4.5V
D041			with Schmitt Trigger buffer		0.8 VDD	—	VDD	V	2.0V ≤ VDD ≤ 5.5V
D042					0.8 VDD	—	VDD	V
D042			MCLR		0.8 VDD	—	VDD	V
D043		OSC1 (XT and LP modes)			1.6	—	VDD	V
D043A			OSC1 (HS mode)		0.7 VDD	—	VDD	V
D043B		OSC1 (RC mode)			0.9 VDD	—	VDD	V	(Note 1)

	IIL		Input Leakage Current(2)
D060		I/O ports			—	± 0.1	± 1	μA	VSS ≤ VPIN ≤ VDD,
									Pin at high-impedance
D061				(3)	—	± 0.1	± 5	μA	VSS ≤ VPIN ≤ VDD
D061			MCLR	(3)	—	± 0.1	± 5	μA	VSS ≤ VPIN ≤ VDD
D063			OSC1		—	± 0.1	± 5	μA	VSS ≤ VPIN ≤ VDD, XT, HS and
									LP oscillator configuration

D070*	IPUR		GPIO Weak Pull-up Current		50	250	400	μA	VDD = 5.0V, VPIN = VSS
	VOL		Output Low Voltage(5)
D080		I/O ports			—	—	0.6	V	IOL = 8.5 mA, VDD = 4.5V (Ind.)

	VOH		Output High Voltage(5)
D090		I/O ports			VDD – 0.7	—	—	V	IOH = -3.0 mA, VDD = 4.5V (Ind.)

*These parameters are characterized but not tested.

†Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested.

Note 1: In RC oscillator configuration, the OSC1/CLKIN pin is a Schmitt Trigger input. It is not recommended to use an external clock in RC mode.

2:Negative current is defined as current sourced by the pin.

3:The leakage current on the MCLR pin is strongly dependent on the applied voltage level. The specified levels represent normal operating conditions. Higher leakage current may be measured at different input voltages.

4:See Section 10.4.1 “Using the Data EEPROM” for additional information.

5:Including OSC2 in CLKOUT mode.

♥ 2007 Microchip Technology Inc.

DS41211D-page 121

PIC12F683

15.5DC Characteristics: PIC12F683-I (Industrial)

PIC12F683-E (Extended) (Continued)

			Standard Operating Conditions (unless otherwise stated)
DC CHARACTERISTICS			Operating temperature		-40°C ≤ TA ≤ +85°C for industrial
					-40°C ≤ TA ≤ +125°C for extended

Param	Sym	Characteristic	Min	Typ†	Max	Units	Conditions
No.	Sym	Characteristic	Min	Typ†	Max	Units	Conditions
No.


D100	IULP	Ultra Low-Power Wake-Up	—	200	—	nA	See Application Note AN879,
		Current					“Using the Microchip Ultra
							Low-Power Wake-up Module”
							(DS00879)

		Capacitive Loading Specs on
		Output Pins
D101*	COSC2	OSC2 pin	—	—	15	pF	In XT, HS and LP modes when
							external clock is used to drive
							OSC1
D101A*	CIO	All I/O pins	—	—	50	pF

		Data EEPROM Memory
D120	ED	Byte Endurance	100K	1M	—	E/W	-40°C ≤ TA ≤ +85°C
D120A	ED	Byte Endurance	10K	100K	—	E/W	+85°C ≤ TA ≤ +125°C
D121	VDRW	VDD for Read/Write	VMIN	—	5.5	V	Using EECON1 to read/write
							VMIN = Minimum operating
							voltage
D122	TDEW	Erase/Write Cycle Time	—	5	6	ms
D123	TRETD	Characteristic Retention	40	—	—	Year	Provided no other specifications
							are violated
D124	TREF	Number of Total Erase/Write	1M	10M	—	E/W	-40°C ≤ TA ≤ +85°C
		Cycles before Refresh(4)
		Program Flash Memory
D130	EP	Cell Endurance	10K	100K	—	E/W	-40°C ≤ TA ≤ +85°C
D130A	ED	Cell Endurance	1K	10K	—	E/W	+85°C ≤ TA ≤ +125°C
D131	VPR	VDD for Read	VMIN	—	5.5	V	VMIN = Minimum operating
							voltage
D132	VPEW	VDD for Erase/Write	4.5	—	5.5	V
D133	TPEW	Erase/Write cycle time	—	2	2.5	ms
D134	TRETD	Characteristic Retention	40	—	—	Year	Provided no other specifications
							are violated

*These parameters are characterized but not tested.

†Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested.

Note 1: In RC oscillator configuration, the OSC1/CLKIN pin is a Schmitt Trigger input. It is not recommended to use an external clock in RC mode.

2:Negative current is defined as current sourced by the pin.

4:See Section 10.4.1 “Using the Data EEPROM” for additional information.

5:Including OSC2 in CLKOUT mode.

DS41211D-page 122

♥ 2007 Microchip Technology Inc.

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