2. Do assignments for diodes and varactors:

1. Using equation of volt-farad characteristic (VFC) of diode and varactor:

,

calculate values of junction capacity С_J0, U_J and М using catalog VFC [Бородин Б.А. “Справочник по полупроводниковым диодам”].

Expected values are: U_J = 0,7 V та U =0,4 V for devices, made of silicon and germanium respectively, and 0,3<М<0,5.

2. Compare the graphs of calculated with tables and catalog VFC using absolute and relative errors:

where and – calculated and catalog value of junction capacity at nominal reverse voltage.

3. Do assignments for Zener diodes:

1. КС133А

2. КС 139А

3. КС 147А

4. КС156А

5. КС 162А

6. КС 168А

7. КС 168В

8. КС 170А

9. КС 175А

10. КС182А

11. КС191А

12. КС210Б

13. КС211Б

14. КС211В

15. КС211Г

16. КС213Б

17. КС533А

18. Д808

19. Д809

20. Д810

21. Д811

22. Д813

23. Д814А

24. Д814Б

25. Д814В

26. Д814Г

27. Д814Д

28. Д818А

29. Д818Е

30. КС107А

1. Describe principle of working of semiconductor Zener diodes.

2. Give general information about considering Zener diode: sketches and shapes of body, function, polarity of voltage and direction of stabilization current, conditions of operating and storing, materials and technology of production, table of qualification, operating and maximum allowable parameters.

3. Using catalog VAC`s of stabilitrons and [Бородин Б. А. “Справочник по полупроводниковым диодам”], graphically calculate differential:

and static:

Resistances for nominal stabilization currents for 3 values of temperature.

4. Build a temperature graphical dependence of resistances ) and .

5. Calculate efficiency ratio:

and build it`s .

4. Do assignments for bipolar transistors:

4.1. КТ104А	4.18.	КТ355А	4.35. КТ704Б
4.2. КТ201В	4.19.	КТ360В	4.36. КТ802А
4.3. КТ202В	4.20.	КТ368А	4.37. КТ803А
4.4. КТ203А	4.21.	КТ369А	4.38. КТ807Б
4.5. КТ206А	4.22.	КТ371А	4.39. КТ808А
4.6. КТ208А	4.23.	КТ379А	4.40. КТ819А
4.7. КТ215А-1	4.24.	КТ380В	4.41. КТ903А
4.8. КТ312А	4.25.	КТ3102Г	4.42. КТ904А
4.9. КТ315Б	4.26.	КТ3107В	4.43. КТ907А
4.10.КТ316А	4.27.	ГТ402Б	4.44. КТ911А
4.11.КТ317В	4.28.	ГТ403А	4.45. КТ919Г
4.12.КТ331А	4.29.	ГТ405А	4.46. КТ920А
4.13.КТ332Б	4.30.	КТ501А	4.47. КТ925В
4.14ЪКТ339А	4.31.	КТ604А	4.48. КТ927А
4.15.КТ349В	4.32.	КТ606Б	4.49. КТ931А
4.16.КТ351Б	4.33.	КТ611А	4.50. КТ934А
4.17.КТ352А	4.34.	КТ703А

1. Describe principle of working of bipolar transistor in modes of amplification and switching of(comutation of) the signals

2. Give general information about considering bipolar transistor: sketches and body shapes, polarities of voltages and directions of current for circut for switching with common emitter (CE), materials and technology of producing, function, tables of qualifications, nominal and maximal parameters.

3. Using static catalog input and output VAC`s [Лавриненко В.Ю. “Справочник по полупроводниковым приборам.”], graphically calculate differential values of h-parameters for nominal modes of bipolar transistors for circut with CE:

; . ; ;

Build full equivalent circuit with CE and write down transistor model equation for h-parameters.

4. Neglecting the influence of internal feedback in considering model, deduce formulas and calculate coefficients of current gain for circuit with CE:

,

voltage:

and power:

.

5. Connect load resistor to output circuit of model, deduce formulas, and calculate values of the same coefficients.:

,

Where , 1 kOhm, and 1Mohm.