Добавил:
Upload
Опубликованный материал нарушает ваши авторские права? Сообщите нам.
Вуз:
Предмет:
Файл:Bachelor thesis
.pdf
Conclusion
The method of 3D modeling of semiconductor devices in SILVACO TCAD was studied.
3D model of FDR taking into account technological parameters of CCD manufacturing was developed.
The following characteristics for different topology of FDR were obtained and analyzed:
–C-V characteristics.
–Field and charge distribution.
Recommendations for optimization of topology of floating diffusion region were proposed.
11
Соседние файлы в предмете [НЕСОРТИРОВАННОЕ]