Explain the features of Fermi level location in

Національний авіаційний університет

Кафедра _____________інформаційно-вимірювальних систем_______________

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Напрям 0907 «Радіотехніка»

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Спеціальність 6.090700 «Радіоелектронні пристрої, системи і комплекси»

6.090700 «Апаратура радіозв’язку, радіомовлення та телебачення»

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Дисципліна ________«Радіоматеріали, радіокомпоненти та мікроелектроніка»

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КОМПЛЕКСНА КОНТРОЛЬНА РОБОТА

Варіант № 30

1. Explain the features of Fermi level location in intrinsic, electronic and hole semiconductors.

2. Draw and explain a structure of germanium junction and point diodes.

3. Explain the main principles to control the conductively of a field –effect transistor(FET). Types of a FETs.

4. Explain a principles electrical circuit and set of output characteristics of MDS key with resistive-capacitive load while switching on.

1. Give an electronics classification.

2. Draw a semiconductor CVC diode. What expression is it describedwith? Explain the process in a positive voltage region.

3. Explain the structure and CVC of a diode thyristor.

4. Transistor as the most complex elements of integrated circuits. Draw and explain the cross-section of standard-signal integrated n-p-n-transistor.

1. Describe the current, flowing thought a semiconductor as a sum of electrons and holes. Draw a crystal lattice.

2. Enumerate and explain all parameters of semiconductor diodes, you know.

3. Explain a structures and connection structure diagram of FET with controlled p-n-junctionExplain a principles electrical circuit and set of output characteristics of MDS key with resistive-capacitive load while switching on.

4. Explain a transient processes of MDS key with resistive-capacitive load.

1. Describe the main stages of electronic development.

2. Draw a semiconductor CVC diode. What expression is it describedwith? Explain the process in a reverse voltage region.

3. Explain the structure and CVC of a triode thyristor.

4. Manufacturing technology of integrated MOS (MOS) transistors. Cross section of integrated MOS - transistor with induced p-type channel.

1. Make a comparison analyze of semiconductor devices and vacuum devices

2. Describe the process in p-n junction when the reverse connections of external voltage is applied.

3. Explain a static characteristics of FET with controlled p-n-junction.

4. Explain a principles electrical circuit and set of output characteristics of MDS key with resistive-capacitive load while switching off.

1. Describe the current, flowing thought a intrinsic semiconductor. Write corresponding equations for electron density.

2. Draw a circuit diagram of the parametric stabilizer and explain how it operates.

3. Explain the structure and CVC of a symmetrical thyristor.

4. What materials are widely used for semiconductor integrated circuits development? Explain main features of each method.

1. Explain the properties of insulators with reference to electronic conduction. Draw the diagram of energy levels. Give an examples of insulators.

2. What types of high-frequency diodes do you know? How are they serve?

3. Explain a main parameters of FET with controlled p-n-junction.

4. Explain a principles electrical circuit and set of output characteristics of MDS key with dynamic load while switching on.

1. Explain the properties of semiconductors with reference to electronic conduction. Draw the diagram of energy levels. Give an examples of semiconductors.

2. Explain the process, occurring in at high voltage and current in pulsed diodes.

3. Explain the parameters of semiconductor thyristor.

4. Explain the main principles of IMC marking.

1. Why are electronic devices made of extrinsic semiconductors? Explain it by the crystal lattice of germanium.

2. Explain the process, occurring in at low amplitude in pulsed diodes.

3. Explain a properties of FET with Schottky’s barrier.

4. Explain a transient processes of MDS key with dynamic load.

1. Explain the concept “drift current”.

2. Explain the merits of Schottky diodes.

3. Preconditions for planar technology development.

4. What is electronic lithography? Essence of such technology, field of utilization.

1. Explain the features of work function in intrinsic, electronic and hole semiconductors.

2. Write the p-n-p-transistor circuit diagram with the direct voltage. Explain the current, flows thru it.

3. Explain a general classification and principles of structure of FET with insulated gates.

4. Explain a principles electrical circuit and set of output characteristics of MDS key with dynamic load while switching off.

1. Explain the properties of Fermi level at T0K, T=0K.

2. Explain the process, occurring in at high voltage and current in pulsed diodes.

3. Compare the BT and FET.

4. Describe the achievements of planar technology.

1. Explain main functions of active and passive radiomaterials. Illustrate it by an example.

2. Draw a connection diagram of the varicap and explain how it operates.

3. Explain a general classification and principles of structure of FET with insulated gates.

4. Explain the main features of MDS key with complementary pair.

1. Explain the properties of metals with reference to electronic conduction. Draw the diagram of energy levels. Give an examples of metals.

2. Write an equation for full capacitance in diode. Capacitance in reverse voltage, applied to the diode.

3. Classification and specificity of a FET.

4. Describe all stages the production of p-n junctions by method of planar-diffusion technology.

1. 1. Explain the process of diffusion of charge carriers in semiconductors. Factor of diffusion.

2. 2. Characterize all type of diode breakdown, you know.

3. Explain a sink-gate characteristics of MDS-transistors with induced channel.

4. Explain a principles electrical circuit and set of output characteristics of MDS key with dynamic load while switching off.

1. Explain the features of Fermi level location in intrinsic, electronic and hole semiconductors.

2. Draw and explain a structure of germanium junction and point diodes.

3. Explain the structure and CVC of a diode thyristor.

4. Describe the planar-epitaxial technology of semiconductor devises creation.

1. Describe the process in metal-semiconductor contact when the work function of metal is higher, than that of electronic semiconductor.

2. Draw a basic circuit of one half-cycle rectifier and explain how it operates.

3. Explain the main principles to control the conductively of a field –effect transistor(FET). Types of a FETs.

4. Explain a principles electrical circuit and set of output characteristics of MDS key with resistive-capacitive load while switching on.

1. Describe the process in metal-semiconductor contact when the work function of n-type electronic semiconductor is higher, than that of metal.

2. How is it possible to determine voltage and current in a diode circuit using the graph-analytical method?

3. Explain the structure and CVC of a diode thyristor.

4. Diode as an elements of integrated circuits.

1. Describe the process in metal-semiconductor contact when the work function of n-type electronic semiconductor is lower, than that of metal.

2. Draw and explain the high model of a semiconductor diode.

3. Explain a structures and connection structure diagram of FET with controlled p-n-junctionExplain a principles electrical circuit and set of output characteristics of MDS key with resistive-capacitive load while switching on.

4. Explain a transient processes of MDS key with resistive-capacitive load.

1. What kind of processes does a p-n junction have in an equilibrium state?

2. Describe the process in p-n junction when the forward connections of external voltage is applied.

3. Explain the structure and CVC of a triode thyristor.

4. Resistor as an elements of integrated circuits.

1. Explain the reasons and mechanisms of power amplification in common-base transistors.

2. Write the p-n-p-transistor circuit diagram with the direct voltage. Explain the current, flows thru it.

3. Explain a static characteristics of FET with controlled p-n-junction.

4. Explain a principles electrical circuit and set of output characteristics of MDS key with resistive-capacitive load while switching off.

1. Write the n-p-n-transistor circuit diagram with the direct voltage. Explain the current, flows thru it.

2. Write the n-p-n-transistor circuit diagram with the direct voltage. Explain the current, flows thru it.

3. Explain the structure and CVC of a symmetrical thyristor.

4. Capacitor as an elements of integrated circuits.

1. Write the n-p-n-transistor circuit diagram with the direct voltage. Explain the current, flows thru it.

2. Draw schematic diagram of common-emitter transistors connection. Draw and explain the input and output characteristics.

3. Explain a main parameters of FET with controlled p-n-junction.

4. Explain a principles electrical circuit and set of output characteristics of MDS key with dynamic load while switching on.

1. Explain the reasons and mechanisms of power amplification in common-base transistors.

2. What is the h-parameter system in four-terminals method for calculation the circuit parameters of bipolar transistor?

3. Explain the parameters of semiconductor thyristor.

4. Role of conductor and contact planes in the final structure of the IMC.

1. What method are used for the bipolar transistor circuits research?

2. What is the z-parameter system in four-terminals method for calculation the circuit parameters of bipolar transistor?

3. Explain a properties of FET with Schottky’s barrier.

4. Explain a transient processes of MDS key with dynamic load.

1. What method are used for the bipolar transistor circuits research?

2. What is the z-parameter system in four-terminals method for calculation the circuit parameters of bipolar transistor?

3. Explain a general classification and principles of structure of FET with insulated gates.

4. Explain a principles electrical circuit and set of output characteristics of MDS key with dynamic load while switching off.

1. Classification of bipolar transistors.

2. Explain the reasons and mechanisms of power amplification in common-emitter transistors.

3. Explain the main principles to control the conductively of a field –effect transistor(FET). Types of a FETs.

4. Explain a principles electrical circuit and set of output characteristics of MDS key with resistive-capacitive load while switching on.

1. What is the y-parameter system in four-terminals method for calculation the circuit parameters of bipolar transistor?

2. Explain the main principles of four-terminals method for calculation the circuit parameters of bipolar transistor.

3. Explain the structure and CVC of a diode thyristor.

4. Thin film hybrid microcircuits: Coils of inductance.

1. Draw schematic diagram of common-collector transistors connection. Draw and explain the input and output characteristics.

2. Draw schematic diagram of common-base transistors connection. Draw and explain the input and output characteristics.

3. Compare the BT and FET.

4. Thin film hybrid microcircuits: Capacitors.

1. Explain the reason of collector cutoff current appearing. When we take it into considerations?

2. Explain the reasons and mechanisms of power amplification in common-collector transistors.

3. Preconditions for planar technology development.

4. Thin film hybrid microcircuits: resistors.

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«____» _____________ 2011 р.