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22.5.1Enhanced Power-On Reset

Table 22-4. Characteristics of Enhanced Power-On Reset. TA = -40 – 85°C

Symbol

Parameter

Min(1)

Typ(1)

Max(1)

Units

V

POR

Release threshold of power-on reset (2)

1.1

1.4

1.6

V

 

 

 

 

 

 

V

POA

Activation threshold of power-on reset (3)

0.6

1.3

1.6

V

 

 

 

 

 

 

SRON

Power-On Slope Rate

0.01

 

 

V/ms

Notes: 1. Values are guidelines, only.

2.Threshold where device is released from reset when voltage is rising.

3.The Power-on Reset will not work unless the supply voltage has been below VPOA.

22.5.2Brown-Out Detection

Table 22-5. VBOT vs. BODLEVEL Fuse Coding

BODLEVEL [1:0] Fuses

Min(1)

Typ(1)

 

Max(1)

Units

11

 

BOD Disabled

 

 

 

 

 

 

 

 

10

1.7

1.8

 

2.0

 

 

 

 

 

 

 

01

2.5

2.7

 

2.9

V

 

 

 

 

 

 

00

4.1

4.3

 

4.5

 

 

 

 

 

 

 

Note: 1. VBOT may be below nominal minimum operating voltage for some devices. For devices where this is the case, the device is tested down to VCC = VBOT during the production test. This guarantees that a Brown-out Reset will occur before VCC drops to a voltage where correct operation of the microcontroller is no longer guaranteed.

22.6Analog Comparator Characteristics

Table 22-6. Analog Comparator Characteristics, TA = -40°C - 85°C

Symbol

Parameter

Condition

Min

Typ

Max

Units

 

 

 

 

 

 

 

VACIO

Input Offset Voltage

VCC = 5V, VIN = VCC / 2

 

< 10

40

mV

IACLK

Input Leakage Current

VCC = 5V, VIN = VCC / 2

-50

 

50

nA

 

Analog Propagation Delay

VCC = 2.7V

 

750

 

 

 

(from saturation to slight overdrive)

VCC = 4.0V

 

500

 

 

tACPD

 

 

 

ns

Analog Propagation Delay

VCC = 2.7V

 

100

 

 

 

 

 

 

(large step change)

VCC = 4.0V

 

75

 

 

 

 

 

 

 

tDPD

Digital Propagation Delay

VCC = 1.8V - 5.5

 

1

2

CLK

Note: All parameters are based on simulation results and they are not tested in production

202 ATtiny2313A/4313

8246B–AVR–09/11

ATtiny2313A/4313

22.7Parallel Programming Characteristics

Table 22-7. Parallel Programming Characteristics, VCC = 5V ± 10%

Symbol

Parameter

Min

Typ

Max

Units

 

 

 

 

 

 

 

VPP

 

Programming Enable Voltage

11.5

 

12.5

V

IPP

 

Programming Enable Current

 

 

250

μA

tDVXH

 

Data and Control Valid before XTAL1 High

67

 

 

ns

tXLXH

 

XTAL1 Low to XTAL1 High

200

 

 

ns

tXHXL

 

XTAL1 Pulse Width High

150

 

 

ns

tXLDX

 

Data and Control Hold after XTAL1 Low

67

 

 

ns

tXLWL

 

XTAL1 Low to

 

 

 

 

 

 

 

Low

0

 

 

ns

WR

 

 

tXLPH

 

XTAL1 Low to PAGEL high

0

 

 

ns

tPLXH

 

PAGEL low to XTAL1 high

150

 

 

ns

tBVPH

 

BS1 Valid before PAGEL High

67

 

 

ns

tPHPL

 

PAGEL Pulse Width High

150

 

 

ns

tPLBX

 

BS1 Hold after PAGEL Low

67

 

 

ns

tWLBX

 

BS2/1 Hold after

 

 

 

 

 

Low

67

 

 

ns

WR

 

 

tPLWL

 

PAGEL Low to

 

 

 

 

 

 

Low

67

 

 

ns

WR

 

 

tBVWL

 

BS1 Valid to

 

 

 

 

Low

67

 

 

ns

WR

 

 

tWLWH

 

 

 

 

Pulse Width Low

150

 

 

ns

 

WR

 

 

tWLRL

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Low

0

 

1

μs

 

WR

Low to RDY/BSY

 

tWLRH

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

High(1)

3.7

 

4.5

ms

 

WR

Low to RDY/BSY

 

tWLRH_CE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

High for Chip Erase(2)

7.5

 

9

ms

 

WR

Low to RDY/BSY

 

tXLOL

 

XTAL1 Low to

 

 

 

 

 

Low

0

 

 

ns

 

OE

 

 

tBVDV

 

BS1 Valid to DATA valid

0

 

1000

ns

tOLDV

 

 

Low to DATA Valid

 

 

1000

ns

 

OE

 

 

tOHDZ

 

 

High to DATA Tri-stated

 

 

1000

ns

 

OE

 

 

Notes: 1. tWLRH is valid for the Write Flash, Write EEPROM, Write Fuse bits and Write Lock bits commands.

2.tWLRH_CE is valid for the Chip Erase command.

203

8246B–AVR–09/11

Figure 22-3. Parallel Programming Timing, Including some General Timing Requirements

 

tXLWL

 

 

XTAL1

tXHXL

 

 

tDVXH

tXLDX

 

 

Data & Contol

 

 

 

(DATA, XA0/1, BS1, BS2)

 

 

 

tBVPH

tPLBX

tBVWL

tWLBX

PAGEL

tPHPL

 

 

 

 

 

 

tWLWH

WR

tPLWL

 

WLRL

 

 

 

RDY/BSY

 

 

 

 

 

 

tWLRH

Figure 22-4. Parallel Programming Timing, Loading Sequence with Timing Requirements(1)

LOAD ADDRESS

LOAD DATA

LOAD DATA LOAD DATA

LOAD ADDRESS

(LOW BYTE)

(LOW BYTE)

(HIGH BYTE)

(LOW BYTE)

 

t XLXH

tXLPH

tPLXH

 

 

XTAL1

BS1

PAGEL

DATA

ADDR0 (Low Byte)

DATA (Low Byte)

DATA (High Byte)

ADDR1 (Low Byte)

XA0

XA1

Note: 1. The timing requirements shown in Figure 22-3 (i.e., tDVXH, tXHXL, and tXLDX) also apply to loading operation.

Figure 22-5. Parallel Programming Timing, Reading Sequence (within the Same Page) with

Timing Requirements(1)

 

 

 

 

 

LOAD ADDRESS

READ DATA

 

 

 

READ DATA

 

LOAD ADDRESS

 

 

 

 

 

(LOW BYTE)

(LOW BYTE)

 

 

 

(HIGH BYTE)

 

(LOW BYTE)

 

 

 

 

 

 

tXLOL

 

 

 

 

 

 

 

 

 

 

 

 

XTAL1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

BS1

 

 

 

 

 

 

 

 

 

 

tBVDV

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tOLDV

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

OE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tOHDZ

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ADDR1 (Low Byte)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DATA

 

ADDR0 (Low Byte)

 

 

DATA (Low Byte)

 

 

 

DATA (High Byte)

 

 

 

 

 

 

 

XA0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

XA1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Note:

1.

The timing requirements shown in Figure 22-3 (i.e., tDVXH, tXHXL, and tXLDX) also apply to read-

 

 

 

 

ing operation.

 

 

 

 

 

 

 

 

 

 

 

204 ATtiny2313A/4313

8246B–AVR–09/11

ATtiny2313A/4313

22.8Serial Programming Characteristics

Figure 22-6. Serial Programming Timing

MOSI

 

 

 

 

tOVSH

tSHOX

tSLSH

SCK

tSHSL

 

 

 

 

 

MISO

 

 

 

Figure 22-7. Serial Programming Waveform

 

 

SERIAL DATA INPUT

MSB

 

LSB

(MOSI)

 

 

 

SERIAL DATA OUTPUT

MSB

 

LSB

(MISO)

 

 

 

SERIAL CLOCK INPUT (SCK)

SAMPLE

Table 22-8. Serial Programming Characteristics, TA = -40°C to 85°C, VCC = 1.8 - 5.5V (Unless Otherwise Noted)

Symbol

Parameter

 

Min

Typ

Max

Units

 

 

 

 

 

 

 

1/tCLCL

Oscillator Frequency (ATtiny2313A/4313)

 

0

 

4

MHz

tCLCL

Oscillator Period (ATtiny2313A/4313)

 

250

 

 

ns

1/tCLCL

Oscillator Frequency (ATtiny2313A/4313, VCC =

0

 

20

MHz

4.5V - 5.5V)

 

 

tCLCL

Oscillator Period (ATtiny2313A/4313, VCC

=

50

 

 

ns

4.5V - 5.5V)

 

 

 

tSHSL

SCK Pulse Width High

 

2 tCLCL*

 

 

ns

tSLSH

SCK Pulse Width Low

 

2 tCLCL*

 

 

ns

tOVSH

MOSI Setup to SCK High

 

tCLCL

 

 

ns

tSHOX

MOSI Hold after SCK High

 

2 tCLCL

 

 

ns

tSLIV

SCK Low to MISO Valid

 

 

 

100

ns

Note: 2 tCLCL for fck < 12 MHz, 3 tCLCL for fck >= 12 MHz

205

8246B–AVR–09/11

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