- •Features
- •1. Pin Configurations
- •1.1 Pin Descriptions
- •1.1.3 Port A (PA2..PA0)
- •1.1.4 Port B (PB7..PB0)
- •1.1.5 Port D (PD6..PD0)
- •1.1.6 RESET
- •1.1.7 XTAL1
- •1.1.8 XTAL2
- •2. Overview
- •2.1 Block Diagram
- •2.2 Comparison Between ATtiny2313A and ATtiny4313
- •3. About
- •3.1 Resources
- •3.2 Code Examples
- •3.3 Data Retention
- •4. CPU Core
- •4.1 Architectural Overview
- •4.2 ALU – Arithmetic Logic Unit
- •4.3 Status Register
- •4.4 General Purpose Register File
- •4.5 Stack Pointer
- •4.6 Instruction Execution Timing
- •4.7 Reset and Interrupt Handling
- •4.7.1 Interrupt Response Time
- •5. Memories
- •5.1 Program Memory (Flash)
- •5.2 Data Memory (SRAM) and Register Files
- •5.2.1 General Purpose Register File
- •5.2.2 I/O Register File
- •5.2.3 Data Memory (SRAM)
- •5.3 Data Memory (EEPROM)
- •5.3.1 Programming Methods
- •5.3.2 Read
- •5.3.3 Erase
- •5.3.4 Write
- •5.3.5 Preventing EEPROM Corruption
- •5.3.6 Program Examples
- •5.4 Register Description
- •5.4.1 EEAR – EEPROM Address Register
- •5.4.2 EEDR – EEPROM Data Register
- •5.4.3 EECR – EEPROM Control Register
- •5.4.4 GPIOR2 – General Purpose I/O Register 2
- •5.4.5 GPIOR1 – General Purpose I/O Register 1
- •5.4.6 GPIOR0 – General Purpose I/O Register 0
- •6. Clock System
- •6.1 Clock Subsystems
- •6.2 Clock Sources
- •6.2.1 Default Clock Source
- •6.2.2 External Clock
- •6.2.3 Calibrated Internal RC Oscillator
- •6.2.4 128 kHz Internal Oscillator
- •6.2.5 Crystal Oscillator
- •6.3 System Clock Prescaler
- •6.3.1 Switching Time
- •6.4 Clock Output Buffer
- •6.5 Register Description
- •6.5.1 OSCCAL – Oscillator Calibration Register
- •6.5.2 CLKPR – Clock Prescale Register
- •7. Power Management and Sleep Modes
- •7.1 Sleep Modes
- •7.1.1 Idle Mode
- •7.1.3 Standby Mode
- •7.2 Software BOD Disable
- •7.3 Power Reduction Register
- •7.4 Minimizing Power Consumption
- •7.4.1 Analog Comparator
- •7.4.2 Internal Voltage Reference
- •7.4.4 Watchdog Timer
- •7.4.5 Port Pins
- •7.5 Register Description
- •7.5.1 MCUCR – MCU Control Register
- •7.5.2 PRR – Power Reduction Register
- •8. System Control and Reset
- •8.1 Resetting the AVR
- •8.2 Reset Sources
- •8.2.2 External Reset
- •8.2.4 Watchdog Reset
- •8.3 Internal Voltage Reference
- •8.4 Watchdog Timer
- •8.4.1 Timed Sequences for Changing the Configuration of the Watchdog Timer
- •8.4.2 Code Example
- •8.5 Register Description
- •8.5.1 MCUSR – MCU Status Register
- •8.5.2 WDTCSR – Watchdog Timer Control and Status Register
- •9. Interrupts
- •9.1 Interrupt Vectors
- •9.2 External Interrupts
- •9.2.1 Low Level Interrupt
- •9.2.2 Pin Change Interrupt Timing
- •9.3 Register Description
- •9.3.1 MCUCR – MCU Control Register
- •9.3.2 GIMSK – General Interrupt Mask Register
- •9.3.3 GIFR – General Interrupt Flag Register
- •9.3.4 PCMSK2 – Pin Change Mask Register 2
- •9.3.5 PCMSK1 – Pin Change Mask Register 1
- •9.3.6 PCMSK0 – Pin Change Mask Register 0
- •10. I/O-Ports
- •10.1 Ports as General Digital I/O
- •10.1.1 Configuring the Pin
- •10.1.2 Toggling the Pin
- •10.1.3 Switching Between Input and Output
- •10.1.4 Reading the Pin Value
- •10.1.5 Digital Input Enable and Sleep Modes
- •10.1.6 Unconnected Pins
- •10.1.7 Program Examples
- •10.2 Alternate Port Functions
- •10.2.1 Alternate Functions of Port A
- •10.2.2 Alternate Functions of Port B
- •10.2.3 Alternate Functions of Port D
- •10.3 Register Description
- •10.3.1 MCUCR – MCU Control Register
- •10.3.2 PORTA – Port A Data Register
- •10.3.3 DDRA – Port A Data Direction Register
- •10.3.4 PINA – Port A Input Pins Address
- •10.3.5 PORTB – Port B Data Register
- •10.3.6 DDRB – Port B Data Direction Register
- •10.3.7 PINB – Port B Input Pins Address
- •10.3.8 PORTD – Port D Data Register
- •10.3.9 DDRD – Port D Data Direction Register
- •10.3.10 PIND – Port D Input Pins Address
- •11. 8-bit Timer/Counter0 with PWM
- •11.1 Features
- •11.2 Overview
- •11.2.1 Registers
- •11.2.2 Definitions
- •11.3 Clock Sources
- •11.4 Counter Unit
- •11.5 Output Compare Unit
- •11.5.1 Force Output Compare
- •11.5.2 Compare Match Blocking by TCNT0 Write
- •11.5.3 Using the Output Compare Unit
- •11.6 Compare Match Output Unit
- •11.6.1 Compare Output Mode and Waveform Generation
- •11.7 Modes of Operation
- •11.7.1 Normal Mode
- •11.7.2 Clear Timer on Compare Match (CTC) Mode
- •11.7.3 Fast PWM Mode
- •11.7.4 Phase Correct PWM Mode
- •11.8 Timer/Counter Timing Diagrams
- •11.9 Register Description
- •11.9.1 TCCR0A – Timer/Counter Control Register A
- •11.9.2 TCCR0B – Timer/Counter Control Register B
- •11.9.3 TCNT0 – Timer/Counter Register
- •11.9.4 OCR0A – Output Compare Register A
- •11.9.5 OCR0B – Output Compare Register B
- •11.9.6 TIMSK – Timer/Counter Interrupt Mask Register
- •11.9.7 TIFR – Timer/Counter Interrupt Flag Register
- •12. 16-bit Timer/Counter1
- •12.1 Features
- •12.2 Overview
- •12.2.1 Registers
- •12.2.2 Definitions
- •12.2.3 Compatibility
- •12.3 Timer/Counter Clock Sources
- •12.4 Counter Unit
- •12.5 Input Capture Unit
- •12.5.1 Input Capture Trigger Source
- •12.5.2 Noise Canceler
- •12.5.3 Using the Input Capture Unit
- •12.6 Output Compare Units
- •12.6.1 Force Output Compare
- •12.6.2 Compare Match Blocking by TCNT1 Write
- •12.6.3 Using the Output Compare Unit
- •12.7 Compare Match Output Unit
- •12.7.1 Compare Output Mode and Waveform Generation
- •12.8 Modes of Operation
- •12.8.1 Normal Mode
- •12.8.2 Clear Timer on Compare Match (CTC) Mode
- •12.8.3 Fast PWM Mode
- •12.8.4 Phase Correct PWM Mode
- •12.8.5 Phase and Frequency Correct PWM Mode
- •12.9 Timer/Counter Timing Diagrams
- •12.10 Accessing 16-bit Registers
- •12.10.1 Reusing the Temporary High Byte Register
- •12.11 Register Description
- •12.11.1 TCCR1A – Timer/Counter1 Control Register A
- •12.11.2 TCCR1B – Timer/Counter1 Control Register B
- •12.11.3 TCCR1C – Timer/Counter1 Control Register C
- •12.11.4 TCNT1H and TCNT1L – Timer/Counter1
- •12.11.5 OCR1AH and OCR1AL – Output Compare Register 1 A
- •12.11.6 OCR1BH and OCR1BL – Output Compare Register 1 B
- •12.11.7 ICR1H and ICR1L – Input Capture Register 1
- •12.11.8 TIMSK – Timer/Counter Interrupt Mask Register
- •12.11.9 TIFR – Timer/Counter Interrupt Flag Register
- •13. Timer/Counter0 and Timer/Counter1 Prescalers
- •13.1 Internal Clock Source
- •13.2 Prescaler Reset
- •13.3 External Clock Source
- •13.4 Register Description
- •13.4.1 GTCCR – General Timer/Counter Control Register
- •14. USART
- •14.1 Features
- •14.2 Overview
- •14.2.1 AVR USART vs. AVR UART – Compatibility
- •14.3 Clock Generation
- •14.3.1 Internal Clock Generation – The Baud Rate Generator
- •14.3.2 Double Speed Operation (U2X)
- •14.3.3 External Clock
- •14.3.4 Synchronous Clock Operation
- •14.4 Frame Formats
- •14.4.1 Parity Bit Calculation
- •14.5 USART Initialization
- •14.6 Data Transmission – The USART Transmitter
- •14.6.1 Sending Frames with 5 to 8 Data Bit
- •14.6.2 Sending Frames with 9 Data Bit
- •14.6.3 Transmitter Flags and Interrupts
- •14.6.4 Parity Generator
- •14.6.5 Disabling the Transmitter
- •14.7 Data Reception – The USART Receiver
- •14.7.1 Receiving Frames with 5 to 8 Data Bits
- •14.7.2 Receiving Frames with 9 Data Bits
- •14.7.3 Receive Compete Flag and Interrupt
- •14.7.4 Receiver Error Flags
- •14.7.5 Parity Checker
- •14.7.6 Disabling the Receiver
- •14.7.7 Flushing the Receive Buffer
- •14.8 Asynchronous Data Reception
- •14.8.1 Asynchronous Clock Recovery
- •14.8.2 Asynchronous Data Recovery
- •14.8.3 Asynchronous Operational Range
- •14.9.1 Using MPCM
- •14.10 Register Description
- •14.10.1 UDR – USART I/O Data Register
- •14.10.2 UCSRA – USART Control and Status Register A
- •14.10.3 UCSRB – USART Control and Status Register B
- •14.10.4 UCSRC – USART Control and Status Register C
- •14.10.5 UBRRL and UBRRH – USART Baud Rate Registers
- •14.11 Examples of Baud Rate Setting
- •15. USART in SPI Mode
- •15.1 Features
- •15.2 Overview
- •15.3 Clock Generation
- •15.4 SPI Data Modes and Timing
- •15.5 Frame Formats
- •15.5.1 USART MSPIM Initialization
- •15.6 Data Transfer
- •15.6.1 Transmitter and Receiver Flags and Interrupts
- •15.6.2 Disabling the Transmitter or Receiver
- •15.7 AVR USART MSPIM vs. AVR SPI
- •15.8 Register Description
- •15.8.1 UDR – USART MSPIM I/O Data Register
- •15.8.2 UCSRA – USART MSPIM Control and Status Register A
- •15.8.3 UCSRB – USART MSPIM Control and Status Register B
- •15.8.4 UCSRC – USART MSPIM Control and Status Register C
- •15.8.5 UBRRL and UBRRH – USART MSPIM Baud Rate Registers
- •16. USI – Universal Serial Interface
- •16.1 Features
- •16.2 Overview
- •16.3 Functional Descriptions
- •16.3.2 SPI Master Operation Example
- •16.3.3 SPI Slave Operation Example
- •16.3.5 Start Condition Detector
- •16.3.6 Clock speed considerations
- •16.4 Alternative USI Usage
- •16.4.4 Edge Triggered External Interrupt
- •16.4.5 Software Interrupt
- •16.5 Register Description
- •16.5.1 USICR – USI Control Register
- •16.5.2 USISR – USI Status Register
- •16.5.3 USIDR – USI Data Register
- •16.5.4 USIBR – USI Buffer Register
- •17. Analog Comparator
- •17.1 Register Description
- •17.1.1 ACSR – Analog Comparator Control and Status Register
- •17.1.2 DIDR – Digital Input Disable Register
- •18. debugWIRE On-chip Debug System
- •18.1 Features
- •18.2 Overview
- •18.3 Physical Interface
- •18.4 Software Break Points
- •18.5 Limitations of debugWIRE
- •18.6 Register Description
- •18.6.1 DWDR – debugWire Data Register
- •19. Self-Programming
- •19.1 Features
- •19.2 Overview
- •19.3 Lock Bits
- •19.4.2 Page Erase
- •19.4.3 Page Load
- •19.4.4 Page Write
- •19.4.5 SPMCSR Can Not Be Written When EEPROM is Programmed
- •19.5 Preventing Flash Corruption
- •19.6 Programming Time for Flash when Using SPM
- •19.7 Register Description
- •19.7.1 SPMCSR – Store Program Memory Control and Status Register
- •20. Lock Bits, Fuse Bits and Device Signature
- •20.1 Lock Bits
- •20.2 Fuse Bits
- •20.2.1 Latching of Fuses
- •20.3 Device Signature Imprint Table
- •20.3.1 Calibration Byte
- •20.3.2 Signature Bytes
- •20.4 Reading Lock Bits, Fuse Bits and Signature Data from Software
- •20.4.1 Lock Bit Read
- •20.4.2 Fuse Bit Read
- •20.4.3 Device Signature Imprint Table Read
- •21. External Programming
- •21.1 Memory Parametrics
- •21.2 Parallel Programming
- •21.2.1 Enter Programming Mode
- •21.2.2 Considerations for Efficient Programming
- •21.2.3 Chip Erase
- •21.2.4 Programming the Flash
- •21.2.5 Programming the EEPROM
- •21.2.6 Reading the Flash
- •21.2.7 Reading the EEPROM
- •21.2.8 Programming Low Fuse Bits
- •21.2.9 Programming High Fuse Bits
- •21.2.10 Programming Extended Fuse Bits
- •21.2.11 Programming the Lock Bits
- •21.2.12 Reading Fuse and Lock Bits
- •21.2.13 Reading Signature Bytes
- •21.2.14 Reading the Calibration Byte
- •21.3 Serial Programming
- •21.3.1 Pin Mapping
- •21.3.2 Programming Algorithm
- •21.3.3 Programming Instruction Set
- •21.4 Programming Time for Flash and EEPROM
- •22. Electrical Characteristics
- •22.1 Absolute Maximum Ratings*
- •22.2 DC Characteristics
- •22.3 Speed
- •22.4 Clock Characteristics
- •22.4.1 Calibrated Internal RC Oscillator Accuracy
- •22.4.2 External Clock Drive
- •22.5 System and Reset Characteristics
- •22.6 Analog Comparator Characteristics
- •22.7 Parallel Programming Characteristics
- •22.8 Serial Programming Characteristics
- •23. Typical Characteristics
- •23.1 Effect of Power Reduction
- •23.2 ATtiny2313A
- •23.2.1 Current Consumption in Active Mode
- •23.2.2 Current Consumption in Idle Mode
- •23.2.4 Current Consumption in Reset
- •23.2.5 Current Consumption of Peripheral Units
- •23.2.7 Output Driver Strength
- •23.2.8 Input Thresholds and Hysteresis (for I/O Ports)
- •23.2.9 BOD, Bandgap and Reset
- •23.2.10 Internal Oscillator Speed
- •23.3 ATtiny4313
- •23.3.1 Current Consumption in Active Mode
- •23.3.2 Current Consumption in Idle Mode
- •23.3.4 Current Consumption in Reset
- •23.3.5 Current Consumption of Peripheral Units
- •23.3.7 Output Driver Strength
- •23.3.8 Input Thresholds and Hysteresis (for I/O Ports)
- •23.3.9 BOD, Bandgap and Reset
- •23.3.10 Internal Oscillator Speed
- •24. Register Summary
- •25. Instruction Set Summary
- •26. Ordering Information
- •26.1 ATtiny2313A
- •26.2 ATtiny4313
- •27. Packaging Information
- •28. Errata
- •28.1 ATtiny2313A
- •28.2 ATtiny4313
- •29. Datasheet Revision History
- •Table of Contents
ATtiny2313A/4313
Figure 21-6. Mapping Between BS1, BS2 and the Fuse and Lock Bits During Read
Fuse Low Byte |
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0 |
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0
Extended Fuse Byte 1
DATA
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BS2 |
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0 |
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Lock Bits |
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1
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BS1 |
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Fuse High Byte |
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1 |
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BS2
21.2.13Reading Signature Bytes
The algorithm for reading the signature bytes is as follows (see “Programming the Flash” on page 187 for details on command and address loading):
1.A: Load Command “0000 1000”.
2.B: Load Address Low Byte (0x00 - 0x02).
3.Set OE to “0”, and BS1 to “0”. The selected Signature byte can now be read at DATA.
4.Set OE to “1”.
21.2.14Reading the Calibration Byte
The algorithm for reading the calibration byte is as follows (see “Programming the Flash” on page 187 for details on command and address loading):
1.A: Load Command “0000 1000”.
2.B: Load Address Low Byte, 0x00.
3.Set OE to “0”, and BS1 to “1”. The Calibration byte can now be read at DATA.
4.Set OE to “1”.
21.3Serial Programming
Flash and EEPROM memory arrays can both be programmed using the serial SPI bus while RESET is pulled to GND. The serial interface consists of pins SCK, MOSI (input) and MISO (output). After RESET is set low, the Programming Enable instruction needs to be executed before program/erase operations can be executed.
Serial programming signals and connections are illustrated in Figure 21-7, below. The pin mapping is listed in Table 21-7 on page 195.
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8246B–AVR–09/11
Figure 21-7. Serial Programming Signals
+1.8 - 5.5V
VCC
MOSI
MISO
SCK
XTAL1
RESET
GND
Note: If the device is clocked by the internal oscillator there is no need to connect a clock source to the
CLKI pin.
When programming the EEPROM, an auto-erase cycle is built into the self-timed programming operation and there is no need to first execute the Chip Erase instruction. This applies for serial programming mode, only.
The Chip Erase operation turns the content of every memory location in Flash and EEPROM arrays into 0xFF.
Depending on CKSEL fuses, a valid clock must be present. The minimum low and high periods for the serial clock (SCK) input are defined as follows:
•Minimum low period of serial clock:
–When fck < 12MHz: > 2 CPU clock cycles
–When fck >= 12MHz: 3 CPU clock cycles
•Minimum high period of serial clock:
–When fck < 12MHz: > 2 CPU clock cycles
–When fck >= 12MHz: 3 CPU clock cycles
194 ATtiny2313A/4313
8246B–AVR–09/11
ATtiny2313A/4313
21.3.1Pin Mapping
The pin mapping is listed in Table 21-7. Note that not all parts use the SPI pins dedicated for the internal SPI interface.
Table 21-7. |
Pin Mapping Serial Programming |
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Symbol |
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Pins |
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I/O |
Description |
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MOSI |
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PB5 |
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I |
Serial Data in |
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MISO |
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PB6 |
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O |
Serial Data out |
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SCK |
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PB7 |
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I |
Serial Clock |
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21.3.2Programming Algorithm
When writing serial data to the ATtiny2313A/4313, data is clocked on the rising edge of SCK. When reading data from the ATtiny2313A/4313, data is clocked on the falling edge of SCK. See Figure 22-6 on page 205 and Figure 22-7 on page 205 for timing details.
To program and verify the ATtiny2313A/4313 in the serial programming mode, the following sequence is recommended (See Table 21-8, “Serial Programming Instruction Set,” on page 196):
1.Power-up sequence: apply power between VCC and GND while RESET and SCK are set to “0”
–In some systems, the programmer can not guarantee that SCK is held low during power-up. In this case, RESET must be given a positive pulse after SCK has been
set to '0'. The duration of the pulse must be at least tRST plus two CPU clock cycles. See Table 22-3 on page 201 for definition of minimum pulse width on RESET pin,
tRST
2.Wait for at least 20 ms and then enable serial programming by sending the Programming Enable serial instruction to the MOSI pin
3.The serial programming instructions will not work if the communication is out of synchronization. When in sync, the second byte (0x53) will echo back when issuing the third byte of the Programming Enable instruction
–Regardless if the echo is correct or not, all four bytes of the instruction must be transmitted
–If the 0x53 did not echo back, give RESET a positive pulse and issue a new Programming Enable command
4.The Flash is programmed one page at a time. The memory page is loaded one byte at a time by supplying the 4 LSB of the address and data together with the Load Program Memory Page instruction.
–To ensure correct loading of the page, the data low byte must be loaded before data high byte is applied for a given address
–The Program Memory Page is stored by loading the Write Program Memory Page instruction with the 6 MSB of the address
–If polling (RDY/BSY) is not used, the user must wait at least tWD_FLASH before issuing the next page. (See Table 21-9 on page 197). Accessing the serial programming
interface before the Flash write operation completes can result in incorrect programming.
5.The EEPROM can be programmed one byte or one page at a time.
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8246B–AVR–09/11
–A: Byte programming. The EEPROM array is programmed one byte at a time by supplying the address and data together with the Write instruction. EEPROM memory locations are automatically erased before new data is written. If polling
(RDY/BSY) is not used, the user must wait at least tWD_EEPROM before issuing the next byte (See Table 21-9). In a chip erased device, no 0xFFs in the data file(s) need
to be programmed
–B: Page programming (the EEPROM array is programmed one page at a time). The memory page is loaded one byte at a time by supplying the 6 LSB of the address and data together with the Load EEPROM Memory Page instruction. The EEPROM memory page is stored by loading the Write EEPROM Memory Page Instruction with the 7 MSB of the address. When using EEPROM page access only byte locations loaded with the Load EEPROM Memory Page instruction are altered and the remaining locations remain unchanged. If polling (RDY/BSY) is not used, the user
must wait at least tWD_EEPROM before issuing the next byte (See Table 21-9). In a chip erased device, no 0xFF in the data file(s) need to be programmed
6.Any memory location can be verified by using the Read instruction, which returns the content at the selected address at the serial output pin (MISO)
7.At the end of the programming session, RESET can be set high to commence normal operation
8.Power-off sequence (if required): set RESET to “1”, and turn VCC power off
21.3.3Programming Instruction Set
The instruction set for serial programming is described in Table 21-8.
Table 21-8. Serial Programming Instruction Set
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Instruction Format |
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Instruction |
Byte 1 |
Byte 2 |
Byte 3 |
Byte4 |
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Operation |
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Programming Enable |
1010 1100 |
0101 |
0011 |
xxxx xxxx |
xxxx xxxx |
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Enable Serial Programming after |
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goes low. |
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RESET |
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Chip Erase |
1010 1100 |
100x |
xxxx |
xxxx xxxx |
xxxx xxxx |
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Chip Erase EEPROM and Flash. |
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Read Program Memory |
0010 H000 |
0000 |
00aa |
bbbb bbbb |
oooo oooo |
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Read H (high or low) data o from |
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Program memory at word address a:b. |
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Write H (high or low) data i to Program |
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0100 H000 |
000x |
xxxx |
xxxx bbbb |
iiii iiii |
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Memory page at word address b. Data |
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Load Program Memory Page |
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low byte must be loaded before Data |
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high byte is applied within the same |
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address. |
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Write Program Memory Page |
0100 1100 |
0000 |
00aa |
bbbb xxxx |
xxxx xxxx |
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Write Program Memory Page at |
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address a:b. |
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Read EEPROM Memory |
1010 0000 |
000x |
xxxx |
xbbb bbbb |
oooo oooo |
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Read data o from EEPROM memory at |
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address b. |
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Write EEPROM Memory |
1100 0000 |
000x |
xxxx |
xbbb bbbb |
iiii iiii |
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Write data i to EEPROM memory at |
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address b. |
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Load EEPROM Memory |
1100 0001 |
0000 |
0000 |
0000 00bb |
iiii iiii |
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Load data i to EEPROM memory page |
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buffer. After data is loaded, program |
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Page (page access) |
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EEPROM page. |
196 ATtiny2313A/4313
8246B–AVR–09/11