Dressel.Gruner.Electrodynamics of Solids.2003
.pdf138 6 Semiconductors
results after some calculations [Woo72], and we define a polarizability
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h¯ |
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ωl20 − ω2 |
which is purely real as no absorption has been considered. We use h¯ ωl0 = El − E0 for the energy difference between the two states. The dielectric constant, for N atoms, is then
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α(ω) |
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4π N e2 |
l |
2m |
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h¯ 2 ωl20 |
− ω2 |
(6.1.6) |
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The polarizability can be regarded as a parameter accounting for the effectiveness of the transition, and the fraction of energy absorbed can be expressed in a dimensionless unit as
fl0 = |
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hωl0 |rl0|2 . |
(6.1.7) |
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This is called the oscillator strength, which was introduced in Eq. (5.1.32) in terms of the momentum matrix element |pl0|2:
f |
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2|pl0|2 |
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¯ l0 |
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both can readily be converted by using the commutation relation [p, x] = −ih¯ . The oscillator strength is related to the power absorbed by the transmission, which
reads as P = Wl0hωl0, with the number of transitions per second and per volume |
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d |
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π e2 E2 |
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Wl0 = |
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al al |
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(6.1.9) |
dt |
2h¯ 2 |
As discussed in Appendix D in more detail, the sum of all transitions should add up to unity; this is the so-called oscillator strength sum rule
With this notation |
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fl0 = 1 |
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(6.1.10) |
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1(ω) = 1 |
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4π N e2 |
l |
fl0 |
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(6.1.11) |
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m |
ωl20 − ω2 |
this refers to the real part of the dielectric constant. Kronig relation we obtain also the imaginary part, constant reads
By virtue of the Kramers– and the complex dielectric
ˆ(ω) = 1 + |
4π N e2 |
fl0 |
ωl20 |
1 |
ω2 + |
iπ |
δ ω2 |
− ωl20 |
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. (6.1.12) |
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m l |
2ω |
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6.1 The Lorentz model |
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139 |
For N atoms, all with one excited state, at energy hω |
, the dielectric constant is |
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¯ |
l0 |
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shown in Fig. 6.1. 1(ω = 0) is a positive quantity, and 1(ω) increases as the frequency is raised and eventually diverges at ω = ω1. It changes sign at ωl0 and decreases as the frequency increases. Finally we find a second zero-crossing (with positive slope) from 1 < 0 to 1 > 0 at the so-called plasma frequency
ωp = |
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π N e2 |
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1/2 |
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m |
in analogy to the free-electron case of metals. Here we have assumed that there is no absorption of energy by the collection of N atoms, the exception being the absorption process associated with the transitions between the various energy levels. When the system is coupled to a bath, the energy levels assume a lifetime broadening; this is described by a factor exp{−t/2τ }. With such broadening included, the transitions spread out to have a finite width, and the complex dielectric constant becomes
ˆ(ω) = 1 + |
4π N e2 |
l |
fl |
0 |
. |
(6.1.13) |
m |
ωl20 − ω2 |
− iω/τ |
This will remove the singularity at the frequency ωl0, and 1(ω) for broadened energy levels is also displayed in Fig. 6.1.
Some of the above results can be recovered by assuming the response of a classical harmonic oscillator. This of course is a highly misleading representation of the actual state of affairs in semiconductors, where the absence of dc conduction is due to full bands and not to the localization of electron states. Nevertheless, to examine the consequences of this description, a comparison with the Drude model is a useful exercise. We keep the same terms that we have included for the Drude description, the inertial and relaxational response, and supplement these with a restoring force K . This so-called Lorentz model is that of a harmonic oscillator
d2r |
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E(t) . |
(6.1.14) |
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τ dt |
m |
Here ω0 = (K /m)1/2, where m is the mass of the electron, and τ takes into account damping effects. A model such as that given by the above equation obviously does not lead to a well defined energy gap, but it is nevertheless in accord with the major features of the electrodynamics of a non-conducting state and is widely used to describe the optical properties of non-conducting materials. When the local electric field E has an exp{−iωt} time dependence, we find
r(ω) |
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−eE/m |
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(ω02 − ω2) − iω/τ |
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6 Semiconductors
ν0 = 100 cm−1 νp = 500 cm−1
γ= 0 cm−1
γ= 50 cm−1
101 |
102 |
103 |
104 |
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Frequency ν (cm−1) |
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Fig. 6.1. Frequency dependence of the dielectric constant ˆ(ω) for a transition between well defined energy levels with energy separation ω0/(2π c) = ν0 = 100 cm−1, together with the dielectric constant for a transition between energy levels of width 1/(2π cτ ) = γ = 50 cm−1; the spectral weight is given by the plasma frequency ωp/(2π c) = νp =
500 cm−1.
and for the induced dipole moment pˆ (ω) = −erˆ(ω) we obtain
pˆ |
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1 |
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(ω) = |
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= αˆ a(ω)E , |
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(ω02 − ω2) − iω/τ |
where αˆ a(ω) is the atomic polarizability. The macroscopic polarizability is the sum over all the atoms N per unit volume involved in this excitation: P = N pˆ = N αˆ aE = χˆeE. Since the dielectric constant is related to the dielectric susceptibility via ˆ(ω) = 1+4π χˆe(ω), we obtain for the frequency dependent complex dielectric constant
ˆ(ω) = 1 + |
4π N e2 |
1 |
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+ |
ωp2 |
. (6.1.15) |
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m |
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(ω02 − ω2) − iω/τ |
(ω02 − ω2) − iω/τ |
We assume here that each atom contributes one electron to the absorption process.
6.1 The Lorentz model |
141 |
Conductivity σ (Ω −1 cm−1)
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Frequency ν (cm−1) |
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Fig. 6.2. Real and imaginary parts of the conductivity σˆ (ω) versus frequency calculated after the Lorentz model (6.1.16) for center frequency ν0 = ω0/(2π c) = 100 cm−1, the width γ = 1/(2π cτ ) = 50 cm−1, and the plasma frequency νp = ωp/(2π c) = 500 cm−1.
For the complex conductivity we can write |
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σˆ (ω) = |
N e2 |
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ω |
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(6.1.16) |
m i(ω02 − ω2) + ω/τ |
where ω0 is the center frequency, often called the oscillator frequency, 1/τ denotes the broadening of the oscillator due to damping, and ωp = 4π N e2/m 1/2 describes the oscillator strength, and is referred to as the plasma frequency. It is clear by comparing this expression with Eq. (5.1.4) that the Drude model can be obtained from the Lorentz model by setting ω0 = 0. This is not surprising, as we have retained only the inertial and damping terms to describe the properties of the metallic state.
6.1.2 Optical properties of the Lorentz model
The frequency dependence of the various optical constants can be evaluated in a straightforward manner. Fig. 6.2 displays the real and imaginary parts of the
142 |
6 Semiconductors |
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Frequency ν (cm−1)
νp
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Frequency ν (cm−1)
Fig. 6.3. Frequency |
dependent |
dielectric constant (ω) |
of a Lorentz oscillator |
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(Eq. (6.1.15)) with ν0 |
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. The extrema |
of 1 are at ±γ /2 around the oscillator frequency ν0; 1(ω) crosses zero at approximately ν0 and νp. The inset shows the real and imaginary parts of the dielectric constant on a logarithmic frequency scale.
complex conductivity σˆ (ω), |
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σ |
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ωp2 |
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ω2/τ |
and |
σ |
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ωp2 |
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ω(ω02 − ω2) |
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= 4π (ω02 − ω2)2 + ω2/τ 2 |
= − 4π (ω02 − ω2)2 + ω2/τ 2 |
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(6.1.17) |
as a function of frequency. We have chosen the center frequency ν0 = ω0/(2π c) = 100 cm−1, the width γ = 1/(2π cτ ) = 50 cm−1, and the plasma frequency νp =
ωp/(2π c) = 500 cm−1, typical of a narrow gap semiconductor. |
The real and |
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imaginary parts of the dielectric constant, |
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1(ω) = 1 + |
ωp2(ω02 − ω2) |
(6.1.18a) |
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(ω02 − ω2)2 + ω2/τ 2 |
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6.1 The Lorentz model |
147 |
conductivity drops as |
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σ1(ω) (ωτ )−2 |
and |
σ2(ω) (ωτ )−1 . |
(6.1.20) |
Similar considerations hold for the dielectric constant:
1(ω) ≈ 1 |
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ωp2 |
and |
2(ω) ≈ |
ωp2 |
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(6.1.21) |
ω2 |
ω3τ |
both decrease with increasing frequency; of course 1 is still negative.
It is only in this spectral range that the extinction coefficient k which describes the losses of the system is larger than the refractive index n (Fig. 6.4). Similarly, for the surface impedance, the absolute value of the surface reactance XS becomes larger than the surface resistance RS in the range above the center frequency of the oscillator ω0 but still below the plasma frequency ωp, as displayed in Fig. 6.6. The surface resistance exhibits a minimum in the range of high reflectivity because of the phase change between the electric and magnetic fields.
Transparent regime
Finally, at frequencies above ωp, transmission is again important, for the same reasons as discussed in the case of the Drude model. Since k is small, the optical properties such as reflectivity or surface impedance are dominated by the behavior of n(ω). The high frequency dielectric constant 1(ω → ∞) = ∞ approaches unity from below, thus the reflectivity drops to zero above the plasma frequency, and the material becomes transparent. The imaginary part of the energy loss function 1/ ˆ(ω) plotted in Fig. 6.7 is only sensitive to the plasma frequency, where it peaks. The real part
Re |
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12(ω) |
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(ω) |
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1 |
(ω) |
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ˆ |
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shows a zero-crossing at ωp and at ω0.
As expected, all the sum rules derived in Section 3.2.2 also apply to the Lorentz model. If 1/τ is small compared to ω0, the spectral weight is obtained by substituting the expression (6.1.18b) of the imaginary part of the dielectric constant into Eq. (3.2.27):
0 |
∞ ω 2(ω) dω = |
ω2 |
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ωp2τ |
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ω2 |
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arctan{2 |
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p 2 = |
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