Источники / SiCtechnologyPropertiesApplication

346 ǮȑȓȓȐ Ǽ.Ǯ., ǯȓșȭȓȐ Ǯ.dz., ǯȜșȠȜȐȓȤ ǻ.ǿ., ǸȖȟȓșȓȐ ǰ.ǿ., ǸȜțȎȘȜȐȎ Ǿ.ǰ. Ȗ ȒȞ.

ǾȖȟ. 2.29. ǽȞȜȢȖșȖ ȞȎȟȝȞȓȒȓșȓțȖȭ ȘȜȚȝȜțȓțȠȜȐ Ȑ ȎȠȜȚțȩȣ ȝȞȜȤȓțȠȎȣ Ȑ ȟȠȞȡȘȠȡȞȎȣ SiO2-SiC. Ȏ) ȜȏȩȥțȜȓ ȠȓȞȚȖȥȓȟȘȜȓ ȜȘȖȟșȓțȖȓ Ȁ=1373 K, ȐȞȓȚȭ ȜȘȖȟșȓțȖȭ 30 ȚȖț; ȏ) ȜȏȩȥțȜȓ ȠȓȞȚȖȥȓȟȘȜȓ ȜȘȖȟșȓțȖȓ Ȁ=1373 K, ȐȞȓȚȭ ȜȘȖȟșȓțȖȭ 120 ȚȖț; Ȑ) ȜȘȖȟșȓțȖȓ ȝȞȖ ǯȀǼ ȝȞȖ ȠȓȚȝȓȞȎȠȡȞȓ Ȁ=1273 K, ȐȞȓȚȭ ȜȘȖȟșȓțȖȭ 180 ȟ

ǮțȎșȖȕȖȞȡȭ ȝȜșȡȥȓțțȩȓ ȞȓȕȡșȪȠȎȠȩ Ȗȕ ǼȔȓ ȟȝȓȘȠȞȜȚȓȠȞȖȖ, ȚȜȔțȜ ȟȒȓșȎȠȪ ȐȩȐȜȒ, ȥȠȜ Ȑ ȞȎȟȟȚȜȠȞȓțțȩȣ ȟșȡȥȎȭȣ ȝȞȖ ȞȎȕțȩȣ ȚȓȠȜȒȎȣ ȜȘȖȟșȓțȖȭ ȟȜȒȓȞȔȎțȖȓ ȫșȓȚȓțȠȜȐ Ȑ ȎȠȜȚțȩȣ ȝȞȜȤȓțȠȎȣ ȐȓȕȒȓȝȞȖȚȓȞțȜȜȒȖțȎȘȜȐȜ. ǼȒțȎȘȜȝȞȖȜȘȖȟșȓțȖȖȟȝȜȚȜȧȪȬǯȀǼ ȒȖȫșȓȘȠȞȖȘȝȜșȡȥȖșȖȕȎȚȓțȪȦȖȗȐȞȓȚȓțțȜȗȖțȠȓȞȐȎș, ȝȜȟȞȎȐțȓțȖȬ ȟ ȜȘȖȟșȓțȖȓȚ Ȑ ȝȎȞȎȣ ȐȜȒȩ. ǶȟȣȜȒȭ Ȗȕ ȫȠȜȑȜ, ȚȜȔțȜ ȟȘȎȕȎȠȪ, ȥȠȜȖȟȝȜșȪȕȜȐȎțȖȓǯȀǼȝȞȖȜȘȖȟșȓțȖȖȕțȎȥȖȠȓșȪțȜȟțȖȔȎȓȠȐȞȓȚȭ ȝȞȜȐȓȒȓțȖȭ ȒȎțțȜȑȜ ȠȓȣțȜșȜȑȖȥȓȟȘȜȑȜ ȝȞȜȤȓȟȟȎ.

ǸȞȜȚȓȟȠȞȡȘȠȡȞțȩȣȖȟȟșȓȒȜȐȎțȖȗȐ[78] ȝȞȜȐȓșȖȠȎȘȔȓȖȕȚȓȞȓțȖȭ ȫșȓȘȠȞȜȢȖȕȖȥȓȟȘȖȣȣȎȞȎȘȠȓȞȖȟȠȖȘȘȎȞȏȖȒȘȞȓȚțȖȓȐȩȣǺǼǽ ȟȠȞȡȘȠȡȞ, ȖȕȑȜȠȜȐșȓțțȩȣ țȎ ȜȟțȜȐȓ ȐȩȦȓȜȝȖȟȎțțȩȣ ȝșȓțȜȘ SiO2. ǯȩșȖ ȖȕȚȓȞȓțȩȖȣȝȞȜȏȖȐțȩȓ țȎȝȞȭȔȓțȖȭ ȖȐȜșȪȠ-ȢȎȞȎȒțȩȓ ȣȎȞȎȘȠȓȞȖȟȠȖȘȖ.

ǽȞȜȏȖȐțȩȓțȎȝȞȭȔȓțȖȭȠȎȘȖȣǺǼǽ ȟȠȞȡȘȠȡȞȟȜȟȠȎȐȖșȖ36–40 ȐȜșȪȠ. ǽȞȖ ȝșȜȧȎȒȖ ȚȓȠȎșșȖȥȓȟȘȖȣ ȘȜțȠȎȘȠȜȐ 4¸10 6 ȟȚ2 ȫșȓȘȠȞȖȥȓȟȘȎȭ ȝȞȜȥțȜȟȠȪ ǺǼǽ ȟȠȞȡȘȠȡȞ ȟȜȟȠȎȐȖșȎ _9.2 Ǻǰ/ȟȚ

ǶȕȎțȎșȖȕȎȐȜșȪȠ-ȢȎȞȎȒțȩȣȣȎȞȎȘȠȓȞȖȟȠȖȘǺǼǽ-ȟȠȞȡȘȠȡȞȏȩ- șȜ ȡȟȠȎțȜȐșȓțȜ, ȥȠȜ Ȑ ȜȘȖȟșȓ ȝȞȖȟȡȠȟȠȐȡȬȠ ȜȠȞȖȤȎȠȓșȪțȜ ȕȎȞȭȔȓțțȩȓȟȜȟȠȜȭțȖȭ, ȕȎȞȭȒȘȜȠȜȞȩȣȝȜȎȏȟȜșȬȠțȜȗ ȐȓșȖȥȖțȓ ȝȞȓȐȩȦȎȓȠ ȝȜșȜȔȖȠȓșȪțȩȗ ȕȎȞȭȒ Ȑ ȜȘȖȟșȓ. ǽȜȟȘȜșȪȘȡ ȕȎȞȭȒ ȝȜȐȓȞȣțȜȟȠțȩȣ ȟȜȟȠȜȭțȖȗ ȝȜ ȎȏȟȜșȬȠțȜȗ ȐȓșȖȥȖțȓ ȝȞȖ ȜȏȓȒțȓțȖȖ ȡȚȓțȪȦȎȓȠȟȭ ȜȠțȜȟȖȠȓșȪțȜ ȠȜȥȘȖ ȝșȜȟȘȖȣ ȕȜț, ȠȜ ȚȜȔțȜ ȝȜșȎȑȎȠȪ, ȥȠȜ ȒȎțțȩȓ ȟȜȟȠȜȭțȖȭ ȭȐșȭȬȠȟȭ ȎȘȤȓȝȠȜȞțȩȚȖ.

ȁȟȠȎțȜȐșȓțȜ, ȥȠȜȝșȜȠțȜȟȠȪȝȜȐȓȞȣțȜȟȠțȩȣȟȜȟȠȜȭțȖȗȝȞȖȐȩȞȎȧȖȐȎțȖȖ ȜȘȟȖȒȎ ȘȞȓȚțȖȭ ȟ ȝȜȚȜȧȪȬ ǯȀǼ (Nss=2¸1011 8¸1011 ȟȚ 2),

ȕȎȞȭȒ ȟȠȞȡȘȠȡȞȩ ȟȜȟȠȎȐȖș (Qss= 3.2¸10 8 1.3¸10 8 Ǹș¸ȟȚ 2). ǽȞȖ ȖȟȝȜșȪȕȜȐȎțȖȖ ȠȓȞȚȖȥȓȟȘȜȑȜ ȜȘȖȟșȓțȖȭ (Nss = 1.5¸1012 ȟȚ 2,

Qss= 2.4¸10 7 Ǹș¸ȟȚ 2).

2.6. ǰșȖȭțȖȓ ǿǰȅ ȜȏȞȎȏȜȠȘȖ țȎ ȟȐȜȗȟȠȐȎ ȑȞȎțȖȤȩ ȞȎȕȒȓșȎ SiO2/SiC

ǼȝȞȓȒȓșȭȬȧȡȬ ȞȜșȪ ȐȜ Ȑȟȓȣ ȫșȓȘȠȞȜțțȩȣ ȭȐșȓțȖȭȣ țȎ ȝȜȐȓȞȣțȜȟȠȖȖțȎȑȞȎțȖȤȓȞȎȕȒȓșȎȝȜșȡȝȞȜȐȜȒțȖȘȎȟȒȞȡȑȖȚȚȎȠȓȞȖȎșȜȚȖȑȞȎȬȠșȜȘȎșȖȕȜȐȎțțȩȓȝȜȐȓȞȣțȜȟȠțȩȓȫșȓȘȠȞȜțțȩȓȟȜȟȠȜȭțȖȭ (ǽȋǿ), ȝȞȖȞȜȒȎ ȘȜȠȜȞȩȣ ȚȜȔȓȠ ȏȩȠȪ ȞȎȕșȖȥțȜȗ. ǼȒțȜȗ Ȗȕ ȝȞȖȥȖț ȝȜȭȐșȓțȖȭ ǽȋǿȚȜȑȡȠȏȩȠȪșȜȘȎșȪțȩȓȝȜȐȓȞȣțȜȟȠțȩȓțȓȟȜȐȓȞȦȓțȟȠȐȎȠȖȝȎ ȟȠȞȡȘȠȡȞțȩȣ ȒȓȢȓȘȠȜȐ, ȝȞȖȚȓȟȓȗ Ȗ Ȗȣ ȘȜȚȝșȓȘȟȜȐ.

Dzșȭ ȖȕȚȓțȓțȖȭ ȒȓȢȓȘȠțȜȑȜ ȟȜȟȠȎȐȎ ȑȞȎțȖȤȩ ȞȎȕȒȓșȎ SiO2/SiC ȚȜȔțȜ ȖȟȝȜșȪȕȜȐȎȠȪ ȒȜȝȜșțȖȠȓșȪțȩȓ ȐȜȕȒȓȗȟȠȐȖȭ, țȎȝȞȖȚȓȞ, ȠȓȚȝȓȞȎȠȡȞțȩȗ ȜȠȔȖȑ, H-ȜȏșȡȥȓțȖȓ, ȟȐȓȞȣȐȩȟȜȘȜȥȎȟȠȜȠțȡȬ (ǿǰȅ) ȜȏȞȎȏȜȠȘȡ Ȗ Ƞ. Ȓ.

ȀȎȘ Ȑ ȞȎȏȜȠȓ [103] ȖȕȡȥȎșȜȟȪ ȐșȖȭțȖȓ ǿǰȅ ȜȏȞȎȏȜȠȘȖ țȎ ȟȜȟȠȜȭțȖȓ ȑȞȎțȖȤȩ ȞȎȕȒȓșȎ SiO2/SiC. ǯȩș ȝȞȜȐȓȒȓț ȟȞȎȐțȖȠȓșȪțȩȗ ȎțȎșȖȕȜȝȠȖȥȓȟȘȖȣȣȎȞȎȘȠȓȞȖȟȠȖȘȖȚȜȞȢȜșȜȑȖȖȝȜȐȓȞȣțȜȟȠȖȟȠȞȡȘȠȡȞ SiO2/SiC, ȝȜȒȐȓȞȑțȡȠȩȣ ȚțȜȑȜȘȞȎȠțȜȚȡ ǿǰȅ ȜȠȔȖȑȡ Ȑ ȞȎȏȜȥȓȗ ȘȎȚȓȞȓ ȚȎȑțȓȠȞȜțȎ ȟ ȥȎȟȠȜȠȜȗ f= 2.45 DZDZȤ, ȡȒȓșȪțȜȗ ȚȜȧțȜȟȠȪȬ 1.5 ǰȠ/ȟȚ2, Ȑ ȕȎȐȖȟȖȚȜȟȠȖ ȜȠ ȚȓȠȜȒȎ ȝȜșȡȥȓțȖȭ ȝșȓțȘȖ SiO2 țȎ ȘȎȞȏȖȒȓ ȘȞȓȚțȖȭ. ǰȞȓȚȭ ȜȒțȜȘȞȎȠțȜȑȜ ǿǰȅ ȜȠȔȖȑȎ ȟȜȟȠȎȐșȭșȜ 10 ȟ.

ǸȎȘ ȐȖȒțȜ Ȗȕ ȞȖȟ. 2.30Ȏ, Ȑ ȕȎȐȖȟȖȚȜȟȠȖ ȜȠ ȟȝȜȟȜȏȎ ȜȘȖȟșȓțȖȭ ȘȎȞȏȖȒȎ ȘȞȓȚțȖȭ, ȟȡȚȚȎȞțȎȭ ȒȜȕȎ ǿǰȅ ȜȏșȡȥȓțȖȭ ȝȜ-ȞȎȕțȜȚȡ

348 ǮȑȓȓȐ Ǽ.Ǯ., ǯȓșȭȓȐ Ǯ.dz., ǯȜșȠȜȐȓȤ ǻ.ǿ., ǸȖȟȓșȓȐ ǰ.ǿ., ǸȜțȎȘȜȐȎ Ǿ.ǰ. Ȗ ȒȞ.

ǾȖȟ. 2.30. ǼȠțȜȟȖȠȓșȪțȜȓ ȖȕȚȓțȓțȖȓ ȜȝȠȖȥȓȟȘȜȗ ȝșȜȠțȜȟȠȖ D/D0 (a) ȖȝȜșȡȦȖȞȖțȩ%/%0 (ȏ) ȝȜșȜȟȩ ȝȜȑșȜȧȓțȖȭ ȟȠȞȡȘȠȡȞȩ SiO2/SiC ȟ ȚȎȘȟȖȚȡȚȜȚ 630 țȚ Ȑ ȕȎȐȖȟȖȚȜȟȠȖ ȜȠ ȟȡȚȚȎȞțȜȑȜ ȐȞȓȚȓțȖ ǿǰȅ ȐȜȕȒȓȗȟȠȐȖȭ. ǸȞȖȐȩȓ 1–4 – ȒȎțțȩȓ Ȓșȭ ȜȏȞȎȕȤȜȐ, ȝȜșȡȥȓțțȩȣ ȚȓȠȜȒȜȚ ȜȏȩȥțȜȑȜ ȠȓȞȚȖȥȓȟȘȜȑȜȜȘȖȟșȓțȖȭȐȝȎȞȎȣ ȐȜȒȩ ȝȞȖ ȠȓȚȝȓȞȎȠȡȞȓ 1373 K; 1 – ȐȞȓȚȭ ȜȘȖȟșȓțȖȭ 30 ȚȖț, 2 – 60 ȚȖț, 3 – 120 ȚȖț, 4 – 180 ȚȖț.

ǸȞȖȐȩȓ Ǯ, ǰ – ȒȎțțȩȓ Ȓșȭ ȜȏȞȎȕȤȜȐ, ȝȜșȡȥȓțțȩȣ ȚȓȠȜȒȜȚ ȏȩȟȠȞȜȑȜ ȠȓȞȚȖȥȓȟȘȜȑȜ ȜȠȔȖȑȎ Ȑ ȎȠȚȜȟȢȓȞȓ ȟȡȣȜȑȜ ȘȖȟșȜȞȜȒȎ ȝȞȖȠȓȚȝȓȞȎȠȡȞȓ1273 K: Ǯ – ȐȞȓ-

Țȭ ȜȠȔȖȑȎ 60 ȟ, ǰ – 180 ȟ [103]

ȐșȖȭȓȠ țȎ ȖȕȚȓțȓțȖȓ ȜȝȠȖȥȓȟȘȜȗ ȝșȜȠțȜȟȠȖ ȖȟȟșȓȒȡȓȚȩȣ ȟȠȞȡȘȠȡȞ Ȑ ȒȖȎȝȎȕȜțȓ 400–800 țȚ.

ǽȞȖ țȎȥȎșȪțȩȣ ȒȜȕȎȣ ǿǰȅ ȜȏșȡȥȓțȖȭ Ȓșȭ Ȑȟȓȣ ȜȏȞȎȕȤȜȐ, țȓȕȎȐȖȟȖȚȜ ȜȠ ȟȝȜȟȜȏȎ ȝȜșȡȥȓțȖȭ ȟȠȞȡȘȠȡȞȩ, țȎȏșȬȒȎȓȠȟȭ ȡȚȓțȪȦȓțȖȓ ȜȝȠȖȥȓȟȘȜȗ ȝșȜȠțȜȟȠȖ ȝȜșȜȟȩ ȝȜȑșȜȧȓțȖȭ ȟ ȚȎȘȟȖȚȡȚȜȚ Ȑ ȜȏșȎȟȠȖ 630 țȚ(ȞȖȟ. 2.30Ȏ). ǽȞȖȝȜȐȠȜȞțȜȚǿǰȅ ȐȜȕȒȓȗȟȠȐȖȖȜȝȠȖȥȓȟȘȎȭ ȝșȜȠțȜȟȠȪ ȒȎțțȜȗ ȝȜșȜȟȩ ȝȜȑșȜȧȓțȖȭ șȖȏȜ ȜȟȠȎȓȠȟȭ ȝȞȎȘȠȖȥȓȟȘȖ țȓȖȕȚȓțțȜȗ, șȖȏȜ țȓȕțȎȥȖȠȓșȪțȜ ȡȚȓțȪȦȎȓȠȟȭ. ǽȞȖ ȠȎȘȖȣ ȒȜȕȎȣ ǿǰȅ ȐȜȕȒȓȗȟȠȐȖȭ Ȑ ȚȜȞȢȜșȜȑȖȖ ȟȠȞȡȘȠȡȞȩ țȓ țȎȏșȬȒȎȓȠȟȭ țȖȘȎȘȖȣȖȕȚȓțȓțȖȗ. ǿșȓȒȡȬȧȎȭȒȜȕȎǿǰȅȜȏȞȎȏȜȠȘȖ(ȟȡȚȚȎȞțȜȓȐȞȓȚȭ ǿǰȅ ȐȜȕȒȓȗȟȠȐȖȭ30 ȟȓȘ) ȝȞȖȐȜȒȖȠȘȐȜȕȞȎȟȠȎțȖȬȜȝȠȖȥȓȟȘȜȗȝșȜȠțȜȟȠȖȝȜșȜȟȩȝȜȑșȜȧȓțȖȭ(ȞȖȟ. 2.30Ȏ) ȖȘȖȟȥȓȕțȜȐȓțȖȬțȎțȜȜȟȠȞȜȐȘȜȐțȎȐȟȓȣȜȏȞȎȕȤȎȣ, ȑȒȓȜțȖȏȩșȖȜȏțȎȞȡȔȓțȩȞȎțȓȓ, ȣȜȠȭȝȞȖȫȠȜȚ ȚȎȘȞȜȞȓșȪȓȢ ȝșȓțȘȖ SiO2 țȓ ȝȞȓȠȓȞȝȓȐȎȓȠ ȖȕȚȓțȓțȖȗ. ȁȘȎȕȎțțȜȓ ȖȕȚȓțȓțȖȓ ȚȖȘȞȜȞȓșȪȓȢȎ ȝȜȐȓȞȣțȜȟȠȖ Ȓșȭ ȜȠȒȓșȪțȩȣ ȜȏȞȎȕȤȜȐ, ȝȜȕȐȜșȭȓȠȝȞȓȒȝȜșȜȔȖȠȪ, ȥȠȜȝȞȖȟȡȚȚȎȞțȜȚȐȞȓȚȓțȖǿǰȅ ȐȜȕȒȓȗȟȠȐȖȭ 30 ȟȓȘ Ȓșȭ ȫȠȖȣ ȜȏȞȎȕȤȜȐ ȝȞȜȖȕȜȦșȜ ȢȎȕȜȐȜȓ ȖșȖ ȟȠȞȡȘȠȡȞțȜȓ ȖȕȚȓțȓțȖȓȝșȓțȘȖȜȘȖȟșȎ, ȥȠȜȝȞȜȭȐȖșȜȟȪȐȐȩȞȎȐțȖȐȎțȖȖȝȜȐȓȞȣțȜȟȠȖțȎțȎțȜȡȞȜȐțȓȒȜȦȓȞȜȣȜȐȎȠȜȟȠȖȝȜȞȭȒȘȎ0.3 țȚ. DzȎșȪțȓȗȦȓȓ

ȡȐȓșȖȥȓțȖȓȟȡȚȚȎȞțȜȑȜȐȞȓȚȓțȖǿǰȅ ȐȜȕȒȓȗȟȠȐȖȭȝȞȖȐȜȒȖȠȘȠȜȚȡ, ȥȠȜȜȝȠȖȥȓȟȘȎȭȝșȜȠțȜȟȠȪȝȜșȜȟȩȝȜȑșȜȧȓțȖȭȐțȜȐȪȝȎȒȎȓȠ, ȝȞȖȫȠȜȚ ȖȕȚȓțȓțȖȗ ȘȎȘ Ȑ ȚȎȘȞȜȞȓșȪȓȢȓ, ȠȎȘ Ȗ Ȑ ȚȖȘȞȜȞȓșȪȓȢȓ ȝșȓțȜȘ țȓ țȎȏșȬȒȎȓȠȟȭ. ǼȒțȎȘȜȟȒȓșȎȠȪȐȩȐȜȒȜȏ ȜȒțȜȕțȎȥțȜȗȟȐȭȕȖȖȕȚȓțȓțȖȗ ȜȝȠȖȥȓȟȘȜȗ ȝșȜȠțȜȟȠȖ ȟȠȞȡȘȠȡȞȩ ȖȖȕȚȓțȓțȖȗ țȎțȜȞȓșȪȓȢȎ ȝșȓțȜȘ ȜȘȖȟșȎ țȎ ȝȜȐȓȞȣțȜȟȠȖ ȘȎȞȏȖȒȎ ȘȞȓȚțȖȭ Ȑ ȞȎȏȜȠȓ [103] țȓ ȡȒȎșȜȟȪ.

ǶȟȘșȬȥȓțȖȓ Ȗȕ ȜȝȖȟȎțțȩȣ ȐȩȦȓ ȕȎȘȜțȜȚȓȞțȜȟȠȓȗ Ȓșȭ ȝȜȐȓȒȓțȖȭ ȜȝȠȖȥȓȟȘȜȗ ȝșȜȠțȜȟȠȖ ȟȠȞȡȘȠȡȞȩ SiO2/SiC ȟȜȟȠȎȐșȭȬȠ ȜȏȞȎȕȤȩ ȟ ȚȎȘȟȖȚȎșȪțȩȚ ȐȞȓȚȓțȓȚ ȜȘȖȟșȓțȖȭ (ȞȖȟ. 2.30Ȏ). ȀȎȘ Ȓșȭ ȜȏȞȎȕȤȎ, ȝȜșȡȥȓțțȜȑȜ ȚȓȠȜȒȜȚ ǯȀǼ, ȐȞȓȚȭ ȜȠȔȖȑȎ 180 ȟ, ȝȞȖ ȟȡȚȚȎȞțȜȗ ȒȜȕȓ ǿǰȅ ȜȏșȡȥȓțȖȭ 40 ȟ țȎȏșȬȒȎȓȠȟȭ țȓȕțȎȥȖȠȓșȪțȩȗ ȞȜȟȠ ȝȜȑșȜȧȓțȖȭ, Ȏ Ȓșȭ ȜȏȞȎȕȤȎ, ȝȜșȡȥȓțțȜȑȜ ȚȓȠȜȒȜȚ ȜȏȩȥțȜȑȜ ȠȓȞȚȖȥȓȟȘȜȑȜ ȜȘȖȟșȓțȖȭ, ȐȞȓȚȭ ȜȘȖȟșȓțȖȭ 180 ȚȖț, țȎȏșȬȒȎȓȠȟȭ ȐȜȕȞȎȟȠȎțȖȓ ȜȝȠȖȥȓȟȘȜȗ ȝșȜȠțȜȟȠȖ ȝȞȖ ȟȡȚȚȎȞțȜȚ ȐȞȓȚȓțȖ ǿǰȅ ȐȜȕȒȓȗȟȠȐȖȭ 50 ȟ.

ǰ ȜȠșȖȥȖȓ ȜȠ ȜȝȠȖȥȓȟȘȜȗ ȝșȜȠțȜȟȠȖ, Ȑ ȝȜȐȓȒȓțȖȖ ȝȜșȡȦȖȞȖțȩ ȝȜșȜȟȩ ȝȜȑșȜȧȓțȖȭ ȟ ȚȎȘȟȖȚȡȚȜȚ Ȑ ȜȏșȎȟȠȖ 630 țȚ Ȑ ȕȎȐȖȟȖȚȜȟȠȖ ȜȠ ȟȡȚȚȎȞțȜȑȜ ȐȞȓȚȓțȖ ǿǰȅ ȐȜȕȒȓȗȟȠȐȖȭ țȓșȪȕȭ ȐȩȒȓșȖȠȪ ȜȏȧȡȬ ȠȓțȒȓțȤȖȬ. ǵȎȐȖȟȖȚȜȟȠȪȝȜșȡȦȖȞȖțȩȒȎțțȜȗȝȜșȜȟȩȜȠȟȡȚȚȎȞțȜȗ ȒȜȕȩ ǿǰȅ ȐȜȕȒȓȗȟȠȐȖȭ țȜȟȖȠ țȓȚȜțȜȠȜțțȩȗ ȣȎȞȎȘȠȓȞ (ȞȖȟ. 2.30ȏ).

ǶȕȚȓțȓțȖȓ ȡȞȜȐțȭ ȢȜțȜȐȜȑȜ ȝȜȑșȜȧȓțȖȭ țȎȣȜȒȖȠȟȭ Ȑ ȝȜșțȜȚ ȟȜȜȠȐȓȠȟȠȐȖȖ ȟ ȖȕȚȓțȓțȖȓȚ ȐȓșȖȥȖțȩ ȜȝȠȖȥȓȟȘȜȗ ȝșȜȠțȜȟȠȖ

ȐȚȎȘȟȖȚȡȚȓȝȜșȜȟȩ630 țȚ. ȋȠȜȠȞȓȕȡșȪȠȎȠȟȜȑșȎȟȡȓȠȟȭȟȒȎțțȩȚȖ ȞȎȏȜȠȩ [101], ȑȒȓ ȜȠȚȓȥȎȓȠȟȭ, ȥȠȜ ȢȜț, țȎ ȘȜȠȜȞȜȚ țȎȏșȬȒȎȓȠȟȭ ȝȜșȜȟȎ ȟ ȚȎȘȟȖȚȡȚȜȚ Ȑ ȜȏșȎȟȠȖ 630 țȚ Ȗ ȟȎȚȎ ȝȜșȜȟȎ ȖȚȓȬȠ ȓȒȖțȡȬ ȣȖȚȖȥȓȟȘȡȬ ȝȞȖȞȜȒȡ Ȗ ȜȏȡȟșȜȐșȓțȩ țȎșȖȥȖȓȚ ȝȞȖȚȓȟȖ ȎȕȜȠȎ

ȐȘȎȞȏȖȒȓ ȘȞȓȚțȖȭ.

ǸȎȘ ȜȠȚȓȥȎșȜȟȪ ȞȎțȓȓ, ȟȜȑșȎȟțȜ [101, 104–106] ȝȜșȜȟȎ 630 țȚ ȜȏȡȟșȜȐșȓțȎȢȜȠȜȖȜțȖȕȎȤȖȓȗȠȞȓȣțȓȫȘȐȖȐȎșȓțȠțȩȣȒȜțȜȞȜȐȎȕȜȠȎ ȟȑȓȘȟȎȑȜțȎșȪțȜȗȖȘȡȏȖȥȓȟȘȜȗȘȜȜȞȒȖțȎȤȖȓȗȏșȖȔȎȗȦȓȑȜȜȘȞȡȔȓțȖȭ, Ȗ, ȢȎȘȠȖȥȓȟȘȖ ȟȜȟȠȜȖȠ Ȗȕ ȠȞȓȣ ȏșȖȕȘȜȞȎȟȝȜșȜȔȓțțȩȣ ȝȜșȜȟ, ȘȜȠȜȞȩȓȟșȖȐȎȬȠȟȭȐȜȒțȡȦȖȞȜȘȡȬȝȜșȜȟȡ[101]. ǿǰȅ ȐȜȕȒȓȗȟȠȐȖȓ, ȐȓȞȜȭȠțȜ, ȝȞȖȐȜȒȖȠ Ș ȢșȡȘȠȡȎȤȖȭȚ țȓȜȒțȜȞȜȒțȜȟȠȖ ȞȎȟȝȞȓȒȓșȓțȖȭ șȓȑȖȞȡȬȧȖȣ ȝȞȖȚȓȟȓȗ, ȒȓȢȓȘȠȜȐ țȎ ȝȜȐȓȞȣțȜȟȠȖ Ȗ Ȑ ȜȏȨȓȚȓ ȟȠȞȡȘȠȡȞȩ, ȥȠȜ Ȑ ȟȐȜȬ ȜȥȓȞȓȒȪ ȝȞȖȐȜȒȖȠ Ș ȖȕȚȓțȓțȖȬ ȣȎȞȎȘȠȓȞȎ ȚȓȔȝȞȖȚȓȟțȜȑȜȐȕȎȖȚȜȒȓȗȟȠȐȖȭȚȓȔȒȡȤȓțȠȞȎȚȖȝȜȑșȜȧȓțȖȭ[107] Ȗ, ȘȎȘ ȟșȓȒȟȠȐȖȓ ȫȠȜȑȜ, Ș ȖȕȚȓțȓțȖȬ ȖțȠȓțȟȖȐțȜȟȠȖ țȎȏșȬȒȎȓȚȜȗ ȝȜșȜȟȩȝȜȑșȜȧȓțȖȭ. ǻȎȏșȬȒȎȓȚȜȓȐ[103] ȖȕȚȓțȓțȖȓȝȜșȡȦȖȞȖțȩ

350 ǮȑȓȓȐ Ǽ.Ǯ., ǯȓșȭȓȐ Ǯ.dz., ǯȜșȠȜȐȓȤ ǻ.ǿ., ǸȖȟȓșȓȐ ǰ.ǿ., ǸȜțȎȘȜȐȎ Ǿ.ǰ. Ȗ ȒȞ.

șȖțȖȖ ȝȜȑșȜȧȓțȖȭ, ȐȜȕȚȜȔțȜ, ȜȏȨȭȟțȭȓȠȟȭ ȖȕȚȓțȓțȖȓȚ ȞȎȟȝȞȓȒȓșȓțȖȭ ȒȓȢȓȘȠȜȐ Ȑ ȟȠȞȡȘȠȡȞȓ ȜȏȞȎȕȤȎ ȝȜȒ ȒȓȗȟȠȐȖȓȚ ǿǰȅ ȖȕșȡȥȓțȖȭ, ȝȜ ȎțȎșȜȑȖȖ ȟ ȫȢȢȓȘȠȜȚ, ȜȏțȎȞȡȔȓțțȩȚ ȎȐȠȜȞȎȚȖ [108] Ȓșȭ ȝȜșȡȦȖȞȖț ȘȞȖȐȩȣ ȒȖȢȞȎȘȤȖȜțțȜȑȜ ȜȠȞȎȔȓțȖȭ. ǸȞȜȚȓ ȠȜȑȜ, ȝȜȭȐșȓțȖȓ ȖșȖ ȖȟȥȓȕțȜȐȓțȖȓ ȝȜȒ ȒȓȗȟȠȐȖȓȚ ǿǰȅ ȖȕșȡȥȓțȖȭ ȒȓȢȓȘȠȜȐȟȠȞȡȘȠȡȞȩ, ȒȜșȔțȜȟȜȝȞȜȐȜȔȒȎȠȪȟȭȖȕȚȓțȓțȖȓȚȟȖȚȚȓȠȞȖȖ ȏșȖȔȎȗȦȓȑȜ ȜȘȞȡȔȓțȖȭ ȜȠȒȓșȪțȩȣ ȎȠȜȚȜȐ ȎȕȜȠȎ, ȥȠȜ ȐșȓȥȓȠ ȕȎ ȟȜȏȜȗȝȓȞȓȞȎȟȝȞȓȒȓșȓțȖȓȖțȠȓțȟȖȐțȜȟȠȓȗ ȜȠȒȓșȪțȩȣȝȜșȜȟ, ȟȜȟȠȎȐșȭȬȧȖȣ ȝȜșȜȟȡ 630 țȚ, Ȗ Ȑ ȘȜțȓȥțȜȚ ȖȠȜȑȓ ȐȩȕȩȐȎȓȠ ȖȕȚȓțȓțȖȓ ȝȜșȡȦȖȞȖțȩ Ȗ ȖțȠȓțȟȖȐțȜȟȠȖ ȞȓȕȡșȪȠȖȞȡȬȧȓȗ ȝȜșȜȟȩ.

ǮțȎșȖȕ ȝȜșȡȥȓțțȩȣ Ȑ [102] ȫȘȟȝȓȞȖȚȓțȠȎșȪțȩȣ ȞȓȕȡșȪȠȎȠȜȐ ȝȜȕȐȜșȭȓȠȟȒȓșȎȠȪȐȩȐȜȒȜȠȜȚ, ȥȠȜțȎȖȏȜșȓȓȡȟȠȜȗȥȖȐȩȚȖȘ ǿǰȅ ȜȏȞȎȏȜȠȘȓ ȭȐșȭȬȠȟȭ ȟȠȞȡȘȠȡȞȩ, ȝȜșȡȥȓțțȩȓ ȚȓȠȜȒȜȚ ȏȩȟȠȞȜȑȜ ȠȓȞȚȖȥȓȟȘȜȑȜ ȜȠȔȖȑȎ Ȑ ȎȠȚȜȟȢȓȞȓ ȟȡȣȜȑȜ ȘȖȟșȜȞȜȒȎ.

ǹȖȠȓȞȎȠȡȞȎ

1.ǮșȪȠȡȒȜȐȌ.Ǹ., DZȎȞȖȤȩțǮ.DZ. ǹȎȕȓȞțȩȓ ȚȖȘȞȜȠȓȣțȜșȜȑȖȖȖȖȣ ȝȞȖȚȓțȓțȖȭ Ȑ ȫșȓȘȠȞȜțȖȘȓ. – Ǻ.: ǾȎȒȖȜ Ȗ ȟȐȭȕȪ, 2001. – 632 c.

2.ǾȩȘȎșȖț ǻ.ǻ., ȁȑșȜȐ Ǯ.Ǯ., ǵȡȓȐ Ƕ.ǰ., ǸȜȘȜȞȎ Ǯ.ǻ. ǹȎȕȓȞțȎȭ Ȗ ȫșȓȘȠȞȜțțȜ-șȡȥȓȐȎȭ ȜȏȞȎȏȜȠȘȎ ȚȎȠȓȞȖȎșȜȐ: ǿȝȞȎȐȜȥțȖȘ. – Ǻ.: ǺȎȦȖțȜȟȠȞȜȓțȖȓ, 1985. – 496 c.

3.ǯȜȞȖȟȓțȘȜǰ.dz. ȀȐȓȞȒȜȢȎȕțȩȓȝȞȜȤȓȟȟȩȐȝȜșȡȝȞȜȐȜȒțȖȘȎȣȝȞȖ ȖȚȝȡșȪȟțȜȚ țȎȑȞȓȐȓ. – ǺȖțȟȘ: ǻȎȐȡȘȎ Ȗ ȠȫȣțiȘȎ, 1992. – 248 c.

4.ǮțȖȧȖȘ ǰ.Ǻ., DZȜȞȡȦȘȜ ǰ.Ǯ., ǽȖșȖȝȓțȘȜ ǰ.Ǯ., ǽȜțȜȚȎȞȪ ǰ.ǻ., ǽȜțȎȞȭȒȜȐ ǰ.ǰ. ȂȖȕȖȥȓȟȘȖȓ ȜȟțȜȐȩ ȏȩȟȠȞȜȗ ȠȓȞȚȜȜȏȞȎȏȜȠȘȖ. ȀȓȚȝȓȞȎȠȡȞțȩȓ ȝȜșȭ Ȗ ȘȜțȟȠȞȡȘȠȖȐțȩȓ ȜȟȜȏȓțțȜȟȠȖ ȜȏȜȞȡȒȜ-

ȐȎțȖȭ. – ǺȖțȟȘ: ǯDZȁ, 2000. – 136 c.

5.ǿȓȥȓțȜȐ Dz.Ǯ., ǸȎȟȖȚȜȐ Ȃ.Dz., ǮȑȎȓȐ Ȃ.DZ., ǿȐȓȠșȖȥțȩȗ Ǯ.Ǻ., ǮȑȓȓȐ Ǽ.Ǯ. ǮȘȠȖȐȖȞȡȓȚȩȓ ȝȞȜȤȓȟȟȩ ȚȖȘȞȜȫșȓȘȠȞȜțțȜȗ Ƞȓȣ-

țȜșȜȑȖȖ. – ǯȎȘȡ: ȋǹǺ, 2000. – 258 c.

6.DZȞȖȑȜȞȪȭțȤ Ǯ.DZ., ȆȖȑȎțȜȐ Ƕ.ǻ. ǺȖȟȬȞȜȐ Ǯ.Ƕ. ȀȓȣțȜșȜȑȖȥȓȟȘȖȓ ȝȞȜȤȓȟȟȩ șȎȕȓȞțȜȗ ȜȏȞȎȏȜȠȘȖ. – Ǻ.: ǺDZȀȁ ȖȚ. ǻ.ȋ. ǯȎȡ-

ȚȎțȎ, 2008. – 664 c.

7.ǮȣȚȎțȜȐ Ǯ.ǿ. ǹȎȕȓȞțȎȭ Ȗ ȠȞȎȒȖȤȖȜțțȎȭ ȝȜșȡȝȞȜȐȜȒțȖȘȜȐȎȭ ȠȓȣțȜșȜȑȖȭ – ȟȞȎȐțȖȠȓșȪțȩȗ ȎțȎșȖȕ. ǽȞȖȚȓțȓțȖȓ șȎȕȓȞȜȑȞȎȢȖȖ Ȑ ȠȓȣțȜșȜȑȖȖ ȖțȠȓȑȞȎșȪțȩȣ ȟȣȓȚ. – Ǻ: ǺDZȁ, 1991. – 39 c.

8.ǾȎȗțȜȐȎ Ȍ.ǽ., ǯȎȞȣȜȠȘȖț Ǯ.ǰ. DzȖȎȑțȜȟȠȖȘȎ Ȗ ȘȜțȠȞȜșȪ ȏȩȟȠȞȩȣ ȠȓȞȚȖȥȓȟȘȖȣ ȝȞȜȤȓȟȟȜȐ // ǶȕȐ. ȐȡȕȜȐ. ȋșȓȘȠȞȜțȖȘȎ. – 1999. – Ɋ4. – ǿ. 59–70.

9.ǶțȠȓțȟȖȢȖȘȎȤȖȭ ȝȞȜȤȓȟȟȜȐ ȢȜȞȚȖȞȜȐȎțȖȭ ȠȐȓȞȒȜȠȓșȪțȩȣ ȟȠȞȡȘȠȡȞȘȜțȤȓțȠȞȖȞȜȐȎțțȩȚȖȝȜȠȜȘȎȚȖȫțȓȞȑȖȖ/ ǽȜȒȞȓȒ. DzȜȟȠȎțȘȜ Ǯ.ǽ. Ȗ ȀȜșȜȥȘȜ ǻ.Ǹ. – ǺȖțȟȘ: ǯȓȟȠȝȞȖțȠ, 2005. – 682 c.

10.ǮȑȓȓȐ Ǽ.Ǯ., ǯȓșȭȓȐ Ǯ.dz., ǯȜșȠȜȐȓȤ ǻ.ǿ., ǸȜțȎȘȜȐȎ Ǿ.ǰ., ǺȖșȓțȖț ǰ.ǰ., ǽȖșȖȝȓțȘȜ ǰ.Ǯ. ȂȎȕȩ ȐțȓȒȞȓțȖȭ Ȑ ȠȓȣțȜșȜȑȖȖ ȝȜșȡȝȞȜȐȜȒțȖȘȜȐȩȣ ȝȞȖȏȜȞȜȐ Ȗ ǿǯǶǿ / ǽȜȒ ȞȓȒ. Ȓ.Ƞ.ț., ȝȞȜȢ. ǸȜțȎȘȜȐȜȗ Ǿ.ǰ. – ȃȎȞȪȘȜȐ: ǻȀǸ «ǶțȟȠȖȠȡȠ ȚȜțȜȘȞȖȟȠȎșșȜȐ», 2008. – 392 c.

352 ǮȑȓȓȐ Ǽ.Ǯ., ǯȓșȭȓȐ Ǯ.dz., ǯȜșȠȜȐȓȤ ǻ.ǿ., ǸȖȟȓșȓȐ ǰ.ǿ., ǸȜțȎȘȜȐȎ Ǿ.ǰ. Ȗ ȒȞ.

11.DzȐȡȞȓȥȓțȟȘȖȗ Ǯ.ǰ., ǸȎȥȡȞȖț DZ.Ǯ., ǻȖȒȎȓȐ dz.ǰ., ǿȚȖȞțȜȐ ǹ.ǿ. ǶȚȝȡșȪȟțȩȗ ȜȠȔȖȑ ȝȜșȡȝȞȜȐȜȒțȖȘȜȐȩȣ ȚȎȠȓȞȖȎșȜȐ. – Ǻ.:

ǻȎȡȘȎ, 1982. – 208 c.

12.ǿȚȖȠ Ǿ. ǽȜșȡȝȞȜȐȜȒțȖȘȖ. – Ǻ.: ǺȖȞ, 1982. – 559 c.

13.ǸȖȞȓȓȐ ǽ.ǿ. ȂȖȕȖȘȎ ȝȜșȡȝȞȜȐȜȒțȖȘȜȐ. – Ǻ.: ǰȩȟȦȎȭ ȦȘȜșȎ, 1986. – 502 c.

14.DzȪȬșȖ ȁ. ǹȎȕȓȞțȎȭ ȠȓȣțȜșȜȑȖȭ Ȗ ȎțȎșȖȕ ȚȎȠȓȞȖȎșȜȐ. – Ǻ.:

ǺȖȞ, 1986. – 504 c.

15.ǽȎțȘȜȐ Ǵ. ǼȝȠȖȥȓȟȘȖȓ ȝȞȜȤȓȟȟȩ Ȑ ȝȜșȡȝȞȜȐȜȒțȖȘȎȣ. – Ǻ.:

ǺȖȞ, 1973. – 456 ǿ.

16.ȁȣȎțȜȐ Ȍ.Ƕ. ǼȝȠȖȥȓȟȘȖȓ ȟȐȜȗȟȠȐȎ ȝȜșȡȝȞȜȐȜȒțȖȘȜȐ. – Ǻ.:

ǻȎȡȘȎ, 1977. – 367 c.

17.Cho B.J., Kim C.K. Elimination of slips on silicon wafer edge in rapid thermal process by using a ring oxide // J. Appl. Phys. – 1990. – 67, N12. – P. 7583–7586.

18.Fon Alman M.F.. Coupling of laser radiation to metals and semiconductors // Physical Processes in Laser-Materials Interaction. Proc. NATO Adv. Studu Inst., 13–25 July, Pianore (Italy). – 1980. – P. 49–75.

19.ǮȑȓȓȐ Ǽ.Ǯ. ǶȟȟșȓȒȜȐȎțȖȓ ȠȓȚȝȓȞȎȠȡȞțȩȣ ȝȜșȓȗ, țȎȝȞȭȔȓțȖȗ Ȗ ȒȓȢȓȘȠȜȜȏȞȎȕȜȐȎțȖȭ Ȑ ȘȞȓȚțȖȓȐȩȣ ȟȠȞȡȘȠȡȞȎȣ Ƕǿ ȝȞȖ ȏȩȟȠȞȜȗ ȠȓȞȚȖȥȓȟȘȜȗ ȜȏȞȎȏȜȠȘȓ țȓȘȜȑȓȞȓțȠțȩȚ ȖȕșȡȥȓțȖȓȚ. DzȖȟȟȓȞȠȎȤȖȭ țȎ ȟȜȖȟȘȎțȖȓ ȡȥȓțȜȗ ȟȠȓȝȓțȖ ȘȎțȒȖȒȎȠȎ Ƞȓȣț. țȎȡȘ. – ȀȎȑȎțȞȜȑ: ȀDZȀȁ, 1995. – 178 c.

20.ȅȜȝȞȎ Ǹ., DzȎȟ ǿ. ȀȜțȘȜȝșȓțȜȥțȩȓ ȟȜșțȓȥțȩȓ ȫșȓȚȓțȠȩ. – Ǻ.:

ǺȖȞ, 1986. – 435 c.

21.ǮȑȓȓȐ Ǽ.Ǯ. ǯȩȟȠȞȎȭ ȠȓȞȚȜȜȏȞȎȏȜȠȘȎ țȓȘȜȑȓȞȓțȠțȩȚ ǶǸ-Ȗȕ- șȡȥȓțȖȓȚ ȘȜțȠȎȘȠȜȐ Ș ȘȎȞȏȖȒȡ ȘȞȓȚțȖȭ. – ȀȎȑȎțȞȜȑ: ȀDZǾȀȁ, 2003. – 128 c.

22.ǵȖ ǿ. ȂȖȕȖȘȎ ȝȜșȡȝȞȜȐȜȒțȖȘȜȐȩȣ ȝȞȖȏȜȞȜȐ. – Ǻ.: ǺȖȞ, 1984. – 2. – 456 c.

23.ǵȎȣȎȞȜȐ ǻ.ǽ., ǯȎȑȒȎȟȎȞȭț Ǯ.ǰ. ǺȓȣȎțȖȥȓȟȘȖȓ ȭȐșȓțȖȭ Ȑ ȖțȠȓȑȞȎșȪțȩȣ ȟȠȞȡȘȠȡȞȎȣ. – Ǻ.: ǾȎȒȖȜ Ȗ ȟȐȭȕȪ, 1992. – 144 c.

24.Liu H.C., Murarka S.P. Elastic and viscoelastic analysis of stress in thin Àlms // J. Appl. Phys. – 1992. – 72, N8. – P. 3458–3462.

25.Agyeev O.A., Svetlichnyi A.M. Thermoelastic stresses and defects productions in semiconductor-insulator structures at isotermic heating // SPQEO. – 2000. – 3, N3. – P. 338–342.

26.ǿȓȥȓțȜȐDz.Ǯ., ǿȐȓȠșȖȥțȩȗǮ.Ǻ., ǿȜșȜȐȪȓȐǿ.Ƕ., ǮȑȓȓȐǼ.Ǯ., ǸșȜȐȜ Ǯ.DZ. ǺȜȒȓșȖȞȜȐȎțȖȓ ȠȓȚȝȓȞȎȠȡȞțȩȣ ȝȜșȓȗ Ȑ ȝȜșȡȝȞȜȐȜȒțȖȘȜȐȩȣȟȠȞȡȘȠȡȞȎȣȝȞȖȏȩȟȠȞȜȚȠȓȞȚȖȥȓȟȘȜȚȜȠȔȖȑȓ // ȂȖȕȖȘȎȖ ȣȖȚȖȭ ȜȏȞȎȏȜȠȘȖ ȚȎȠȓȞȖȎșȜȐ. – 1994. – Ɋ2. – C. 33–38.

27.ǿȐȓȠșȖȥțȩȗ Ǯ.Ǻ. ǺȜȒȓșȖȞȜȐȎțȖȓ ȞȎȟȝȞȓȒȓșȓțȖȭ ȠȓȚȝȓȞȎ-

ȠȡȞȩ ȝȞȖ ȏȩȟȠȞȜȚ țȎȑȞȓȐȓ ȟȠȞȡȘȠȡȞ Mo-SiO2-Si // ǶȕȐ. ȐȡȕȜȐ.

ȋșȓȘȠȞȜțȖȘȎ. – 2002. – Ɋ4. – C. 29–33.

28.Bentini G.G., Corera L. Analysis of thermal stresses induced in silicon during xenon arc lamp Áash annealing // J. Appl. Phys. 1983. – 54, N4. – P. 2057–2062.

29.Chiou Y.I., Sow C.H., Li G., Ports K.A. Growth characteristics of silicon produced by rapid thermal oxidation processes // Appl. Phys. Lett. – 1990. – 57, N9. – P. 881–883.

30.Yoshiyki Sato, Kazuhide Kiuchi. Oxidation of silicon using lamp light radiation // J. Electrochem. Soc. 1986. – 133, N3. –

P.652–654.

31.ǿȐȓȠșȖȥțȩȗ Ǯ.Ǻ., ǿȓȥȓțȜȐ Dz.Ǯ., ǯȡȞȦȠȓȗț ǰ.Ǻ., ǯȞȎȔțȖȘ ǰ.Ǯ., ǽȜșȭȘȜȐ ǰ.ǰ. ȁȟȠȎțȜȐȘȎ ȖȚȝȡșȪȟțȜȗ ȠȓȞȚȜȜȏȞȎȏȜȠ-

ȘȖ ǶȀǼ-18Ǻ // ȋșȓȘȠȞȜț. ȝȞȜȚ. – 1990. – Ɋ3. – C. 62–64.

32.ǿȐȓȠșȖȥțȩȗ Ǯ.Ǻ., ǿȓȥȓțȜȐ Dz.Ǯ., ǯȡȞȦȠȓȗț ǰ.Ǻ., ǰȜȞȜțȤȜȐ ǹ.ǰ., ǽȜșȭȘȜȐ ǰ.ǰ., ǮȑȓȓȐ Ǽ.Ǯ. ǰȎȘȡȡȚțȎȭ ȡȟȠȎțȜȐȘȎ ȖȚȝȡșȪȟțȜȗ ȠȓȞȚȖȥȓȟȘȜȗ ȜȏȞȎȏȜȠȘȖ ǶȀǼ-18Ǻǰ // ȋșȓȘȠȞȜț.

ȝȞȜȚ. – 1991. – Ɋ3. – C. 6–7.

33.Massoud Z. Hislam, Plummar D. James. Analytical relationship for the oxidation of silicon in dry oxygen in the thin-Àlm regime //

J.Appl. Phys. – 1987. – 62, N8. – P. 3416–3423.

34.Slaoui A., Popon J. P., Siffert P. Characterization of thin silicon oxide obtained by lamp heating // Appl. Phys. A. – 1987. – 43, N4. – P. 301–304.

354 ǮȑȓȓȐ Ǽ.Ǯ., ǯȓșȭȓȐ Ǯ.dz., ǯȜșȠȜȐȓȤ ǻ.ǿ., ǸȖȟȓșȓȐ ǰ.ǿ., ǸȜțȎȘȜȐȎ Ǿ.ǰ. Ȗ ȒȞ.

35.ǾȡȚȎȘ ǻ. ǰ. ǿȖȟȠȓȚȎ ȘȞȓȚțȖȗ – ȒȐȡȜȘȖȟȪ ȘȞȓȚțȖȭ Ȑ ǺǼǽȟȠȞȡȘȠȡȞȎȣ. – ǺȖțȟȘ: ǻȎȡȘȎ Ȗ ȠȓȣțȖȘȎ, 1986. – 240 c.

36.Fukuda H., Arakawa T., Ohno S. Thin-gate SiO2 Àlms formed by in situ multiple rapid thermal processing // IEEE Trans. Electron Dev. – 1992. – 39, N1. – P. 127–133.

37.Fukuda H., Uchiyama A., Hayashi T., Iwabuchi T., Ohno S. 5 nm Gate Oxide Grown by Rapid Thermal Processing for Future MOSFETs // J. Appl. Phys. – 1990. – 29, N1. – P. L137–140.

38.Kazor A., Gwilliam R., Boyd I.W. Growth rate enhancement using ozone during rapid thermal oxidation of silicon // Appl. Phys. Lett. – 1994. – 65, N4. – P. 412–414.

39.Wrixon R., Twamey A., O’Sullivan P., Mathewson A. Enhanced thickness uniformiti and electrical performance of ultrathin dielectrics growth by RTP using varios N2Ǽ – oxinitridation processes //

J.Electrochem. Soc. – 1995. – 142, N8. – P. 2740–2742.

40.ǮțȠȜțȓȠȠȖ ǽ., ǮțȠȜțȖȎȒȖȟ Dz., DzȎȠȠȜț Ǿ., ǼȡșȒȣȓȚ ȁ. ǺǼǽǿǯǶǿ. ǺȜȒȓșȖȞȜȐȎțȖȓ ȫșȓȚȓțȠȜȐ Ȗ ȠȓȣțȜșȜȑȖȥȓȟȘȖȣ ȝȞȜȤȓȟ-

ȟȜȐ. – Ǻ.: ǾȎȒȖȜ Ȗ ȟȐȭȕȪ, 1988. – 496 c.

41.Cosway G. Richard, Hodel W. Michael. Effect RTA on thin thermal oxide // J. Electrochem. Soc. – 1988. – 135, N2. – P. 533–534.

42.Singh R., McCruer N. E., Rajkanan K., Weiss J. H. Rapid isotermal processing //J. Vac. Sci. Technol. A. – 1988. – 6, N8. –

P.1480–1483.

43.Young E. M., Tiller William A. Electron population factor in light enhanced oxidation of silicon // Appl. Phys. Lett. – 1987. – 50, N1. – P. 46–48.

44.Boyd I.W. Ultraviolet induced mechanisms in oxide Àlm formation //Appl. Surf. Sci. – 1997. – 109/110. – P. 538–543.

45.Kazor A. Space-charge diffusion model for rapid thermal oxidation of silicon //J. Appl. Phys. – 1995. – 77, N4. – P. 1477–1481.

46.Deal ǰ. E., Grove A. S. General relationship for the thermal oxidation of silicon // J. Appl. Phys. – 1965. – 36, N12. – P. 3770–3778.

47.ǺȎȟșȜȐ ǰ.ǽ., DzȎțȖșȜȐ ǰ.DZ., ǰȜșȜȟȜȐ Ǹ.Ǯ. ǺȎȠȓȚȎȠȖȥȓȟȘȜȓ ȚȜȒȓșȖȞȜȐȎțȖȓ ȝȞȜȤȓȟȟȜȐ ȠȓȝșȜȚȎȟȟȜȝȓȞȓțȜȟȎ. ȋȐȜșȬȤȖȭ ȒȖȟȟȖȝȎȠȖȐțȩȣ ȟȠȞȡȘȠȡȞ. – Ǻ.: ǻȎȡȘȎ, 1987. – 352 c.

48.ǿȐȓȠșȖȥțȩȗ Ǯ.Ǻ. , ǮȑȓȓȐ Ǽ.Ǯ., ȆșȭȣȜȐȜȗ Dz.Ǯ. ǼȤȓțȘȎ ȐșȖȭțȖȭ ǶǸ-ȖȕșȡȥȓțȖȭ țȎ ȟȘȜȞȜȟȠȪ ȞȜȟȠȎ ȒȐȡȜȘȖȟȖ ȘȞȓȚțȖȭ //

ǶȕȐ. ȀǾȀȁ. – 2000. – Ɋ3. – C. 34–38.

49.Massoud Hislam Z., Plammer James D., Irene Eugene A. Thermal oxidation of silicon in dry oxygen // J. Electrochem. Soc. – 1985. – 132, N7. – P. 1746–1753.

50.DZȎȐȞȖșȓțȘȜ ǰ.Ƕ., DZȞȓȣȜȐ Ǯ.Ǻ., ǸȜȞȏȡȠȭȘ Dz.ǰ., ǹȖȠȜȐȥȓțȘȜ ǰ.DZ. ǼȝȠȖȥȓȟȘȖȓ ȟȐȜȗȟȠȐȎ ȝȜșȡȝȞȜȐȜȒțȖȘȜȐ. – ǸȖȓȐ: ǻȎȡȘȜȐȎ ȒȡȚ-

ȘȎ, 1987. – 608 c.

51.Sturm ǿ. James, Reaves M. Casper. Silicon temperature measurement by infrared adsorption: fundamental processes and doping effects // IEEE Trans. Electron Dev. – 1992. – 39, N1. – P. 81–88.

52.ǰȜȗȤȓȣȜȐȟȘȖȗ Ǯ.ǰ., DzȎȐȩȒȜȐ ǰ.ǻ. ȂȜȠȜȫșȓȘȠȞȖȥȓȟȘȖȓ ǺDzǽȟȠȞȡȘȠȡȞȩ Ȗȕ ȡȕȘȜȕȜțțȩȣ ȝȜșȡȝȞȜȐȜȒțȖȘȜȐ. – ȀȜȚȟȘ: ǾȎȒȖȜ Ȗ ȟȐȭȕȪ, 1990. – 327 c.

53.ǿȐȓȠșȖȥțȩȗ Ǯ.Ǻ., ǮȑȓȓȐ Ǽ.Ǯ., ȆșȭȣȜȐȜȗ Dz.Ǯ. ǼȟȜȏȓțțȜȟȠȖ

ȝȜșȡȥȓțȖȭ ȠȜțȘȖȣ ȝșȓțȜȘ SiO2 ȚȓȠȜȒȜȚ ȏȩȟȠȞȜȗ ȠȓȞȚȖȥȓȟȘȜȗ ȜȏȞȎȏȜȠȘȖ // ȀȓȣțȜșȜȑȖȭ Ȗ ȘȜțȟȠȞȡȖȞȜȐȎțȖȓ Ȑ ȫșȓȘȠȞȜțțȜȗ ȎȝȝȎȞȎȠȡȞȓ. – 2001. – Ɋ4–5. – C. 38–43.

54.Macheli F., Boyd W. Photon-controlled oxidation of silicon // J. Appl. Phys. Lett. – 1987. – 51, N15. – P. 1149–1151.

55.ǹȡȥȖțȖț ǰ.ǰ., ȀȎȖȞȜȐ Ȍ.Ǻ. ǸȎȞȏȖȒ ȘȞȓȚțȖȭ – ȝȓȞȟȝȓȘȠȖȐțȩȗ ȚȎȠȓȞȖȎș ȫșȓȘȠȞȜțțȜȗ ȠȓȣțȖȘȖ // ǶȕȐ. ȐȡȕȜȐ. ȋșȓȘȠȞȜțȖ-

ȘȎ. – 1997. – Ɋ1. – C. 10–37.

56.Kai-Chieh Chuang, Jenn-Gwo Hwu. Thin silicon oxide Àlms on n- type 4H–SiC prepared by scanning frequency anodization method // Microelectron. Eng. – 2009. – 86, N11. – P. 2207–2210.

57.Radtke C., Brandȑo R.V., Pezzi R.P., Morais J., Baumvol I.J.R., Stedile F.C. Characterization of SiC thermal oxidation // Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. –2002. – 190, N1–4. – P. 579–582.

356 ǮȑȓȓȐ Ǽ.Ǯ., ǯȓșȭȓȐ Ǯ.dz., ǯȜșȠȜȐȓȤ ǻ.ǿ., ǸȖȟȓșȓȐ ǰ.ǿ., ǸȜțȎȘȜȐȎ Ǿ.ǰ. Ȗ ȒȞ.

58.Brown D.M., Downey E., Ghezzo M., Kretchmer J., Krishnamurthy V., Hennessy W., Michon G. Silicon carbide MOSFET integrated circuit technology // Phys. Stat. Sol (a). – 1997. – 162, N1. – P. 459–479.

59.Afanasev V., Bassler M., Pensl G., Schulz M. Intrinsic SiC/SiO2 interface states // Phys. Stat. Sol.(a). – 1997. – 162, N1. – P. 321–335.

60.Kopanski J.J. Oxidation of SiC // Properties of silicon carbide. Materials science research center of excellence Howard University, Washington DC (USA). – 1997. – P. 121–128.

61.Onda S., Kumar R., Hara K. SiC integrated MOSFETs // Phys. Stat. Sol.(a). – 1997. – 162, N1. – P. 369–388.

62.Cooper J.A. Advances in SiC MOS technology // Phys. Stat. Sol.(a). – 1997. – 162, N1. – P. 305–320.

63.Ueno K. Orientation dependence of oxidation of SiC surfaces // Phys. Stat. Sol.(a). – 1997. – 162, N1. – P. 299–304.

64.Nutt S.R., Smith D.J. Interface structures in beta-silicon carbide thin Àlms // Appl. Phys. Lett. – 1987. – 50, N4. – P. 203–205.

65.Maranowski M.M., Cooper J.A. Time depended-dielectric-break- down measurements of thermal oxides on n-type 6H-SiC // IEEE Trans. Electron Dev. – 1999. – 46, N3. – P. 520–523.

66.Campi J., Shi Y., Luo Y., Yan F., Zhao J.H. Study of interface state density and effective oxide charge in post-metallization

annealed SiO2/SiC structures // IEEE Trans. Electron Dev. – 1999. – 46, N3. – P. 511–519.

67.ǿȐȓȠșȖȥțȩȗ Ǯ.Ǻ., ǽȜșȭȘȜȐ ǰ.ǰ., ǸȜȥȓȞȜȐ Ǯ.ǻ. ǼȘȖȟșȓțȖȓ ȘȎȞȏȖȒȎ ȘȞȓȚțȖȭ ȏȩȟȠȞȩȚ ȠȓȞȚȖȥȓȟȘȖȚ ȜȠȔȖȑȜȚ // ǶȕȐ.

ȀǾȀȁ. – 2004. – Ɋ1(36). – C. 104–105.

68.Zetterling C., Ostling M. Comparison of thermal gate oxides on silicon and carbon face p-type 6-H silicon carbide // Mat. Res. Soc. Symp. Proc., San Francisco, Materials Research Society. – 1994. – 339. – P. 209.

69.Yano H., Katafuchi F., Kimoto T., Matsunami H. Effects of wet oxidation / Anneal on Interface properties of thermally oxidized

SiO2/SiC MOS system and MOSFET’s // IEEE Trans. Electron Dev. – 1994. – 46, N3. – P. 504–510.

70.Lai P.T., Xu J.P., Chan C.L. Effects of wet N2O Oxidation on interface properties of 6H-SiC MOS capacitors // IEEE Trans. Electron Dev. – 2002. – 23, N7. – P. 410–412.

71.Ueno K. Anomalous oxidation rate in 6H-SiC depending on the

partial pressure of O2 and H2O // J. Electron. Mater. – 1998. – 27, N4. –P. 313–316.

72.Hideki Hashimoto , Yasuto Hijikata , Hiroyuki Yaguchi, Sadafumi Yoshida. Optical and electrical characterizations of 4H- SiC–oxide interfaces by spectroscopic ellipsometry and capaci- tance–voltage measurements // Appl. Surf. Sci. – 2009. – 255, N20. – P. 8648–8653.

73.Materials for high-temperature semiconductor devices. NMAB474 National Press Washington, D.C. – 1995. – 119 p.

74.Schürmann M., Dreiner S., Berges U., Westphal C., Choi S.H., Wang D., Williams J.R., Park M., Lu W., Dhar S., Feldman L.C.

Ultrathin SiO2-Àlms on 4H-SiC(0001) studied by angle-scanned photoelectron diffraction // J. Electron Spectroscopy and Related Phenomena. – 2007. – 156–158. – P. 119–123.

75.Choi S.H., Wang D., Williams J.R., Park M., Lu W., Dhar S.,

Feldman L.C. Nitridation of the SiO2/4H–SiC interface studied by surface-enhanced Raman spectroscopy // Appl. Surf. Sci. – 2007. – 253, N12. – P. 5411–5414.

76.Virojanadara C., Johansson L.I. Photoemission study of Si-rich

4H-SiC surfaces and initial SiO2/SiC interface formation // Phys. Rev. B. – 2005. – 71, N19. – P. 195335.

77.Virojanadara C., Glans P.-A., Johanssona L.I., Eickhoff Th., Dru-

bec W. High energy photoemission investigations of SiO2/SiC samples // Appl. Surf. Sci. – 2001. – 172, N3–4. – P. 253–259.

78.SiC Materials and Devices V. / Ed. Shur M., Rumyantsev S., Levinshtein M. – World ScientiÀc Publishing Company, 2006.

79.ǸȎȟȖȚȜȐ Ȃ.Dz., DZȡȟȓȗțȜȐ ȍ.Ȍ., ǿȐȓȠșȖȥțȩȗ Ǯ.Ǻ., ǽȜșȭȘȜȐ ǰ.ǰ., ǸȜȥȓȞȜȐǮ.ǻ. ȂȜȠȜȟȠȖȚȡșȖȞȜȐȎțțȩȓȝȞȜȤȓȟȟȩȜȘȖȟșȓțȖȭȘȎȞȏȖȒȎ ȘȞȓȚțȖȭ. – ǯȎȘȡ–ȀȎȑȎțȞȜȑ: ǺȡȠȎȞȒȔȖȚ, 2005. –84 c.

358 ǮȑȓȓȐ Ǽ.Ǯ., ǯȓșȭȓȐ Ǯ.dz., ǯȜșȠȜȐȓȤ ǻ.ǿ., ǸȖȟȓșȓȐ ǰ.ǿ., ǸȜțȎȘȜȐȎ Ǿ.ǰ. Ȗ ȒȞ.

80.Gao K.Y., Seyller Th., Ley L., Ciobanu F., Pensl G., Tadich A.,

Riley J.D., Leckey R.G.C. Al2O3 prepared by atomic layer deposition as gate dielectric on 6H-SiC(0001) //Appl. Phys. Lett. – 2003. – 83, N9. – P. 1830–1832.

81.Palmieri R., Radtke C., Silva M.R., Boudinov H., da Silva Jr.E.F.

Trapping of majority carriers in SiO2/4H-SiC structures // J. Phys. D: Appl. Phys. – 2009. – 42, N12. – P. 125301.

82. Johansson L.I., Virojanadara C., Eickho Th., Drube W. A comparative photoemission study of polar and nonpolar SiC surfaces oxidized in N2O // Surf. Sci. – 2004. – 552, Ɋ1–3. – P. 251–259.

83. Virojanadara C., Johansson L.I. Oxidation studies of 4H– SiC(0001) and (0001) // Surf. Sci. – 2002. – 505. – P. 358–366.

84. ǸȎȞȎȥȖțȜȐ ǰ.Ǯ. ȋȢȢȓȘȠȩ ȕȎȞȭȒȜȐȜȗ țȓȟȠȎȏȖșȪțȜȟȠȖ Ȑ ȟȖȟȠȓȚȓ ȘȎȞȏȖȒ ȘȞȓȚțȖȭ–ȒȖȫșȓȘȠȞȖȘ // ȂȀǽ. – 1997. – 31, N1. – C. 53–55.

85. Hoshino Y., Fukuyama R., Kido Y. Oxidized surface structure and oxidation kinetics of the C-terminated 6H-SiC (0001) -(2×2) surface // Phys. Rev. B. – 2004. – 70, N16. – P. 165303.

86. Hoshino Y., Matsumoto S., Kido Y. Atomic scale characterization of oxidized 6H–SiC (1120) surfaces // Surf. Sci. – 2003. –

531, N3. – P. 295–303.

87. Shin Takahashi, Shinichiro Hatta, Akitaka Yoshigoe, Yuden Teraoka, Tetsuya Aruga. High resolution X-ray photoelectron spectroscopy study on initial oxidation of 4H-SiC(0001)-(¥3×¥3)R30° surface // Surf. Sci. – 2009. – 603, N1. – P. 221–225.

88. ǯȜȏȘȜȐȎ ǻ.Ǻ. ȂȖȕȖȥȓȟȘȎȭ ȣȖȚȖȭ ȠȡȑȜȝșȎȐȘȖȣ țȓȚȓȠȎșșȖȥȓȟȘȖȣ Ȗ ȟȖșȖȘȎȠțȩȣ ȚȎȠȓȞȖȎșȜȐ. – ǺȖțȟȘ: «ǰȩȦȫȗȦȎȭ ȦȘȜșȎ», 2007. – 301 c.

89. Woon W.S., Hutagalung S.D., Cheong K.Y. Characterization of anodic SiO2 Àlms on P-type 4H-SiC // Thin Sol. Films. – 2009. – 517, N8. – P. 2808–2812.

90. DzȎțȖȦȓȐȟȘȖȗ Ǯ.Ǻ., ǹȓȏȓȒȓȐ ǰ.Ǻ., ǾȜȑȎȥȓȐ Ǯ.Ȍ., ȆȡȚȎț ǰ.ǯ., ǿȖȠțȖȘȜȐȎ Ǯ.Ǯ., ǵȜșȜȠȎȞȓȐȎ Ǿ.ǰ. ȂȜȠȜșȬȚȖțȓȟȤȓțȤȖȭ ȟșȜȓȐ SiO2, ȝȞȖȑȜȠȜȐșȓțțȩȣ țȎȝșȓțȘȎȣC-SiC, ȖȎțȎșȖȕȖȣȫșȓȚȓțȠ-

țȜȑȜ ȟȜȟȠȎȐȎ // ȂȀȀ. – 2007. – 49, Ɋ5. – C. 791–797.

91.ǶȐȎțȜȐ ǽ.Ǯ., ǿȎȚȟȜțȜȐȎ Ȁ.ǽ., ǽȎțȠȓșȓȓȐ ǰ.ǻ., ǽȜșȭȘȜȐ Dz.Ȍ.

ǶȟȟșȓȒȜȐȎțȖȓ ȑșȡȏȜȘȖȣ șȜȐȡȦȓȘ țȎ ȖțȠȓȞȢȓȗȟȓ SiO2/6H-SiC ȚȓȠȜȒȜȚ țȓȞȎȐțȜȐȓȟțȜȑȜ ȫȢȢȓȘȠȎ ȝȜșȭ // ȂȀǽ. – 2001. – 35,

Ɋ4. – C. 482–488.

92.ǶȐȎțȜȐ ǽ.Ǯ., ǶȑțȎȠȪȓȐ Ǹ.Ƕ., ǽȎțȠȓșȓȓȐ ǰ.ǻ., ǿȎȚȟȜțȜȐȎ Ȁ.ǽ. DZșȡȏȜȘȖȓ ȝȜȐȓȞȣțȜȟȠțȩȓ ȟȜȟȠȜȭțȖȭ țȎ ȖțȠȓȞȢȓȗȟȓ SiC ȟ ȟȜȏȟȠȐȓțțȩȚ ȠȓȞȚȖȥȓȟȘȖȚ ȜȘȖȟșȜȚ // ǽȖȟȪȚȎ Ȑ ǴȀȂ. – 1997. –

23, Ɋ20. – C. 55–60.

93. ǯȎȞȎȏȎț Ǯ.ǽ., ǺȎșȭȐȘȎ ǹ.ǰ.. ȋȢȢȓȘȠȩ ȒȎșȪțȜȒȓȗȟȠȐȖȭ Ȑ ȖȜțțȜ-ȖȚȝșȎțȠȖȞȜȐȎțțȩȣ ȟȠȞȡȘȠȡȞȎȣ ȘȞȓȚțȖȗ – ȒȐȡȜȘȖȟȪ ȘȞȓȚțȖȭ // ǽȖȟȪȚȎ Ȑ ǴȀȂ. – 1997. – 23, Ɋ20. – C. 26–31.

94.Galesic I., Angelkort C., Lewalter H., Berendes A., Kolbesen B.O. Formation transition metal nitrides by rapid thermal processing (PTP) // Phys. Stat. Sol. (a). – 2000. – 177, N1. – P. 15–26.

95.Kuan Yew Cheong, Wook Bahng, Nam-Kyun Kim. Analysis of

charge conduction mechanismsin nitrided SiO2 Film on 4H-SiC // Phys. Let. A. – 2008. – 372, N4. – P. 529532

96.ǸȖȞȓȓȐ ǰ.Ȍ., ȄȖȚȏȎșȜȐ Ǯ.ǿ. ǯȩȟȠȞȩȓ ȠȓȞȚȖȥȓȟȘȖȓ ȝȞȜȤȓȟȟȩ – țȜȐȩȗ ȫȠȎȝ Ȑ ȞȎȕȐȖȠȖȖ ȚȖȘȞȜȫșȓȘȠȞȜțțȜȗ ȠȓȣțȜșȜȑȖȖ //

ǺȖȘȞȜȫșȓȘȠȞȜțȖȘȎ. – 2001. – 30, N4. – C. 266–278.

97.ǽȜșȭȘȜȐ ǰ.ǰ., ǿȐȓȠșȖȥțȩȗ Ǯ.Ǻ., ǸȜȥȓȞȜȐ Ǯ.ǻ., ȆȓșȘȡțȜȐ Ǯ.Ǯ. ǼȏȜȞȡȒȜȐȎțȖȓ Ȓșȭ ȢȜȞȚȖȞȜȐȎțȖȭ ȒȖȫșȓȘȠȞȖȥȓȟȘȖȣ ȝșȓțȜȘ țȎ ȜȟțȜȐȓ ȖțȢȞȎȘȞȎȟțȩȣ Ȗ ȡșȪȠȞȎȢȖȜșȓȠȜȐȩȣ ȝȜȠȜȘȜȐ ȖȕșȡȥȓțȖȭ // ǺȖȘȞȜȫșȓȘȠȞȜțțȩȓ ȝȞȓȜȏȞȎȕȜȐȎȠȓșȖ Ȗ ȝȞȖȏȜȞȩ țȎ Ȗȣ ȜȟțȜȐȓ. – ǯȎȘȡ: ǺȡȠȎȞȒȔȖȚ, 2003. – C. 62–64.

98.ǶȐȎțȜȐȎ Ƕ.Ǻ. ǰȜȕȒȓȗȟȠȐȖȓ ȐȎȘȡȡȚțȜȑȜ ȡșȪȠȞȎȢȖȜșȓȠȜȐȜȑȜ ȖȕșȡȥȓțȖȭ țȎ ȝȜȐȓȞȣțȜȟȠȪ țȓȜȞȑȎțȖȥȓȟȘȖȣ Ȗ ȜȞȑȎțȖȥȓȟȘȖȣ ȐȓȧȓȟȠȐ, ȝȞȖȚȓțȭȓȚȩȣ Ȑ ȚȖȘȞȜȫșȓȘȠȞȜțȖȘȓ. DzȖȟȟȓȞȠȎȤȖȭ țȎ ȟȜȖȟȘȎțȖȓ ȡȥȓțȜȗ ȟȠȓȝȓțȖ ȘȎțȒȖȒȎȠȎ ȢȖȕ.-ȚȎȠ. țȎȡȘ. – Ǻ. – 1989. – 122 c.

99.ǿȐȓȠșȖȥțȩȗ Ǯ.Ǻ., ǽȜșȭȘȜȐ ǰ.ǰ., ǸȜȥȓȞȜȐ Ǯ.ǻ. ǰșȖȭțȖȓ ȖȚȝȡșȪȟțȜȑȜ ȖțȢȞȎȘȞȎȟțȜȑȜ țȎȑȞȓȐȎ țȎ ȝȞȜȤȓȟȟ ȜȘȖȟșȓțȖȭ ȘȎȞȏȖȒȎ ȘȞȓȚțȖȭ // ǮȘȠȡȎșȪțȩȓ ȝȞȜȏșȓȚȩ ȠȐȓȞȒȜȠȓșȪțȜȗ ȫșȓȘȠȞȜțȖȘȖ Ȗ ȚȖȘȞȜȫșȓȘȠȞȜțȖȘȖ. – ȀȎȑȎțȞȜȑ: ȀǾȀȁ, 2002. – C. 90.

362 ǮȑȓȓȐ Ǽ.Ǯ., ǯȓșȭȓȐ Ǯ.dz., ǯȜșȠȜȐȓȤ ǻ.ǿ., ǸȖȟȓșȓȐ ǰ.ǿ., ǸȜțȎȘȜȐȎ Ǿ.ǰ. Ȗ ȒȞ.

ȑȒȓ j0 – ȝșȜȠțȜȟȠȪ ȝȜȠȜȘȎ ȜȏȚȓțȎ ȥȎȟȠȖȤ ȚȓȔȒȡ ȢȎȕȎȚȖ Ȑ ȞȎȐțȜȐȓȟȖȖ; %µ – șȜȘȎșȪțȜȓȕțȎȥȓțȖȓȜȠȘșȜțȓțȖȭȣȖȚȖȥȓȟȘȜȑȜȝȜȠȓțȤȖȎșȎ ȜȠȓȑȜȞȎȐțȜȐȓȟțȜȑȜȕțȎȥȓțȖȭ; I – ȜȠȘșȜțȓțȖȓȘȜțȠȎȘȠțȜȗ ȞȎȕțȜȟȠȖ ȝȜȠȓțȤȖȎșȜȐȐȜȏȓȖȣȢȎȕȎȣȜȠȓȓȞȎȐțȜȐȓȟțȜȑȜȕțȎȥȓțȖȭ; ȝȎȞȎȚȓȠȞȩ BȖC(B+C=1) – ȖțȒȖȐȖȒȡȎșȪțȩȓȣȎȞȎȘȠȓȞȖȟȠȖȘȖȘȜțȠȎȘȠȖȞȡȬȧȖȣ ȢȎȕ, ȜȏȡȟșȜȐșȓțțȩȓ ȜȠșȖȥȖȭȚȖ Ȑ ȫțȓȞȑȖȖ ȥȎȟȠȖȤȩ ȝȞȖ ȝȓȞȓȣȜȒȓ Ȗȕ ȢȎȕȩ ǥ Ȑ ǥǥ.

ǰȎȔțȩȚ ȟșȓȒȟȠȐȖȓȚ ȐȩȞȎȔȓțȖȭ (1.1) ȭȐșȭȓȠȟȭ ȠȜ, ȥȠȜ ȝȞȖȎțȎșȖȕȓȘȖțȓȠȖȘȖȑȓȠȓȞȜȑȓțțȩȣȐȜȕȒȓȗȟȠȐȖȗȚȓȔȒȡȠȐȓȞȒȩȚȖȠȓșȎȚȖ țȓȠțȓȜȏȣȜȒȖȚȜȟȠȖȐȡȥȓȠȓȘȜțȘȞȓȠțȩȣȚȖȘȞȜȟȘȜȝȖȥȓȟȘȖȣȚȜȒȓșȓȗ ȟȠȞȜȓțȖȭ Ȗȣ ȝȜȐȓȞȣțȜȟȠȓȗ.

DzȖȢȢȡȕȖȜțțȜȓ ȞȎȕȚȩȐȎțȖȓ DZǾ ȝȞȖ țȎȝȩșȓțȖȖ ȚȓȠȎșșȜȐ țȎ ȏȖțȎȞțȩȓ ȝȜșȡȝȞȜȐȜȒțȖȘȖ ȭȐșȭȓȠȟȭ ȝȞȓȒȚȓȠȜȚ ȚțȜȑȜȥȖȟșȓțțȩȣ ȖȟȟșȓȒȜȐȎțȖȗ [1–4, 6–8]. ǿȡȚȚȖȞȡȭ ȝȜșȡȥȓțțȩȓ Ȑ ȫȠȖȣ ȞȎȏȜȠȎȣ ȞȓȕȡșȪȠȎȠȩ, ȚȜȔțȜ ȟȒȓșȎȠȪ ȟșȓȒȡȬȧȖȓ ȜȏȜȏȧȓțȖȭ Ȑ ȞȎȚȘȎȣ ȢȓțȜȚȓțȜșȜȑȖȥȓȟȘȜȑȜȜȝȖȟȎțȖȭȘȖțȓȠȖȘȖȑȓȠȓȞȜȑȓțțȩȣȞȓȎȘȤȖȗȚȓȔȒȡ ȠȐȓȞȒȩȚȖ ȢȎȕȎȚȖ.

–ǶțȠȓțȟȖȐțȜȟȠȪ ȝȞȜȤȓȟȟȜȐ ȒȖȟȟȜȤȖȎȤȖȖ Ȗ ȎȡȠȒȖȢȢȡȕȖȖ ȘȜȚȝȜțȓțȠȜȐ ȝȜșȡȝȞȜȐȜȒțȖȘȎ ȚȜțȜȠȜțțȜ ȡȚȓțȪȦȎȓȠȟȭ ȟȐȜȕȞȎȟȠȎțȖȓȚ ȠȓȝșȜȠȩ ȓȑȜ ȜȏȞȎȕȜȐȎțȖȭ. DzȖȢȢȡȕȖȭ ȎțȖȜțȜȐ Ȗ ȘȎȠȖȜțȜȐ Ȑ ȟșȜȗ ȚȓȠȎșșȎ țȎȏșȬȒȎȓȠȟȭ ȘȎȘ ȝȞȖ țȎȝȩșȓțȖȖ ȞȓȎȘȠȖȐțȩȣ, ȠȎȘ Ȗ țȓȞȓȎȘȠȖȐțȩȣ ȚȓȠȎșșȜȐ. ǽȜȐȩȦȓțȖȓ ȠȓȚȝȓȞȎȠȡȞȩ ȡȟȖșȖȐȎȓȠ ȫȠȜȠ ȫȢȢȓȘȠ.

–ǼȠțȜȦȓțȖȓȘȜțȤȓțȠȞȎȤȖȖ«ȟȐȜȏȜȒțȜȑȜ» ȘȎȠȖȜțȎȘȟȐȭȕȎțțȜȚȡ ȞȎȟȠȓȠ ȝȞȖ țȎțȓȟȓțȖȖ ȞȓȎȘȠȖȐțȩȣ ȚȓȠȎșșȜȐ. DzȞȡȑȖȚ ȜȠșȖȥȖȓȚ ȞȓȎȘȠȖȐțȩȣ ȚȓȠȎșșȜȐ ȜȠ ȣȖȚȖȥȓȟȘȖ ȝȎȟȟȖȐțȩȣ ȭȐșȭȓȠȟȭ ȟȓșȓȘȠȖȐțȜȓ ȜȏȜȑȎȧȓțȖȓ ȟșȜȭ ȚȓȠȎșșȜȐ ȜȒțȜȗ Ȗȕ ȘȜȚȝȜțȓțȠ ȏȖțȎȞțȜȑȜ ȝȜșȡȝȞȜȐȜȒțȖȘȎ.

ǻȎȏșȬȒȎȓȚȩȓ ȜȟȜȏȓțțȜȟȠȖ Ȑ ȒȖȢȢȡȕȖȜțțȩȣ ȞȎȟȝȞȓȒȓșȓțȖȭȣ ȘȜȚȝȜțȓțȠ ȝȜșȡȝȞȜȐȜȒțȖȘȎ țȓ ȭȐșȭȬȠȟȭ ȟșȓȒȟȠȐȖȓȚ ȜȑȞȎțȖȥȓțȖȗ, ȟȐȭȕȎțțȩȣ ȟ Ȗȣ ȞȎȟȠȐȜȞȖȚȜȟȠȪȬ Ȑ ȚȓȠȎșșȖȥȓȟȘȖȣ ȝșȓțȘȎȣ,

ȎȜȝȞȓȒȓșȭȬȠȟȭ «ȣȖȚȖȥȓȟȘȖȚ» ȕȎȣȐȎȠȜȚ ȎȠȜȚȜȐ ȜȒțȜȗ ȘȜȚȝȜțȓțȠȩ ȝȜșȡȝȞȜȐȜȒțȖȘȎ țȎ DZǾ.

ǸȞȜȚȓ ȒȖȢȢȡȕȖȖ țȎȞȡȔȡ, ȖȚȓȓȠ ȚȓȟȠȜ Ȗ ȒȖȢȢȡȕȖȭ ȎȠȜȚȜȐ ȚȓȠȎșșȎ ȐȑșȡȏȪ ȝȜșȡȝȞȜȐȜȒțȖȘȎ. ǽȞȖȥȓȚ, ȘȎȘ ȏȩșȜ ȝȜȘȎȕȎțȜ Ȑ [8]

ȝȞȖȖȟȟșȓȒȜȐȎțȖȖ ȘȜțȠȎȘȠȜȐȟȖȟȝȜșȪȕȜȐȎțȖȓȚ ȎȠȜȚțȩȣȚȎȞȘȓȞȜȐ, ȢȖȘȟȖȞȡȬȧȖȣȝȜșȜȔȓțȖȓDZǾ, ȒȖȢȢȡȕȖȭȎȠȜȚȜȐȚȓȠȎșșȎȐȑșȡȏȪȝȜșȡȝȞȜȐȜȒțȖȘȎ ȝȞȓȒȦȓȟȠȐȡȓȠ ȒȖȢȢȡȕȖȖ ȎȠȜȚȜȐ ȝȜșȡȝȞȜȐȜȒțȖȘȎ.

ǸȞȜȚȓ «ȣȖȚȖȥȓȟȘȜȑȜ ȕȎȣȐȎȠȎ», țȎ ȒȖȢȢȡȕȖȜțțȩȓ ȞȎȟȝȞȓȒȓșȓțȖȭ ȎȠȜȚȜȐ țȎ ǺȂDZ ȚȜȑȡȠ ȜȘȎȕȩȐȎȠȪ ȐșȖȭțȖȓ ȫșȓȘȠȞȖȥȓȟȘȖȓ ȝȜșȭ, ȜȏȡȟșȜȐșȓțțȩȓ ȒȖȝȜșȭȚȖ, ȐȜȕțȖȘȎȬȧȖȚȖ ȝȞȖ ȣȓȚȜȟȜȞȏȤȖȖ ȚȓȠȎșșȜȐ [9]. ȋȠȜȠ ȐȠȜȞȖȥțȩȗ ȝȞȜȤȓȟȟ ȚȜȔȓȠ ȐȩȕȐȎȠȪ ȖȕȚȓțȓțȖȓ Ȑ ȒȖȢȢȡȕȖȜțțȩȣ ȝȜȠȜȘȎȣ ȕȎ ȟȥȓȠ ȫȢȢȓȘȠȎ ȫșȓȘȠȞȜȚȖȑȞȎȤȖȖ.

ȋșȓȘȠȞȜȚȖȑȞȎȤȖȭȐȟȜȥȓȠȎțȖȖ ȟ«ȣȖȚȖȥȓȟȘȖȚȕȎȣȐȎȠȜȚ» ȚȜȔȓȠ ȝȞȖȐȜȒȖȠȪȘȞȎȕțȜȜȏȞȎȕțȩȚȖȕȚȓțȓțȖȭȚȐȟȜȜȠțȜȦȓțȖȖȘȜȚȝȜțȓțȠ ȝȜșȡȝȞȜȐȜȒțȖȘȜȐțȎDZǾȘȜțȠȎȘȠȖȞȡȬȧȖȣȢȎȕ. ȋȠȖȫȢȢȓȘȠȩțȎȖȏȜșȓȓȟȡȧȓȟȠȐȓțțȩ ȝȞȖȢȜȞȚȖȞȜȐȎțȖȖ ȠȜțȘȜȝșȓțȜȥțȩȣ ȘȜțȠȎȘȠțȩȣ ȟȠȞȡȘȠȡȞ. ǰ ȠȜ ȐȞȓȚȭ ȘȎȘ ȝȞȖ țȎȝȩșȓțȖȖ ȠȜșȟȠȩȣ ȟșȜȓȐ ȚȓȠȎșșȎ ȕțȎȥȖȠȓșȪțȜ ȏȜșȓȓȟȡȧȓȟȠȐȓțțȜȓ ȐșȖȭțȖȓțȎȒȖȢȢȡȕȖȬȜȘȎȕȩȐȎȓȠ «ȣȖȚȖȥȓȟȘȖȗ ȕȎȣȐȎȠ».

dzȧȓ ȜȒȖț ȚȓȣȎțȖȕȚ, ȐșȖȭȬȧȖȗ țȎ ȟȠȞȡȘȠȡȞțȜ-ȢȎȕȜȐȩȗ ȟȜȟȠȎȐ ǽǿ ȘȜțȠȎȘȠȜȐ, ȜȏȡȟșȜȐșȓț ȠȐȓȞȒȜȢȎȕțȩȚȖ ȞȓȎȘȤȖȭȚȖ, ȝȞȜȠȓȘȎȬȧȖȚȖ ȟ ȜȏȞȎȕȜȐȎțȖȓȚ țȜȐȩȣ ȣȖȚȖȥȓȟȘȖȣ ȟȜȓȒȖțȓțȖȗ, șȖȏȜ ȫȐȠȓȘȠȖȥȓȟȘȖȚȖ ȝȞȓȐȞȎȧȓțȖȭȚȖ. ǽȞȜȒȡȘȠȎȚȖ ȞȓȎȘȤȖȖ ȎȠȜȚȜȐ ȚȓȠȎșșȎ ȟ ȏȖțȎȞțȩȚȖ ȝȜșȡȝȞȜȐȜȒțȖȘȎȚȖ, ȚȜȑȡȠ ȏȩȠȪ ȠȐȓȞȒȩȓ ȞȎȟȠȐȜȞȩ, ȫȐȠȓȘȠȖȥȓȟȘȖȓȟȚȓȟȖ, ȎȠȎȘȔȓȏȖțȎȞțȩȓȖȏȜșȓȓȟșȜȔțȩȓȣȖȚȖȥȓȟȘȖȓ ȢȎȕȩ, ȢȜȞȚȖȞȡȓȚȩȓ ȘȜȚȝȜțȓțȠȎȚȖ ȘȜțȠȎȘȠȖȞȡȬȧȖȣ ȝȎȞ. Ƕȣ ȐȓȞȜȭȠțȜȟȠȪȜȏȞȎȕȜȐȎțȖȭȚȜȔțȜȝȞȜȑțȜȕȖȞȜȐȎȠȪ, ȞȎȟȟȥȖȠȩȐȎȭȖȕȚȓțȓțȖȭ ȫțȓȞȑȖȖ DZȖȏȏȟȎ %G ȐȜȕȚȜȔțȩȣ ȞȓȎȘȤȖȗ (ȟȚ., țȎȝȞȖȚȓȞ, [10]).

ǻȎȝȞȎȐșȓțȖȓ ȞȓȎȘȤȖȖ ȜȝȞȓȒȓșȭȓȠȟȭ ȕțȎȘȜȚ %G. ǽȞȖ %G< 0 ȞȓȎȘȤȖȭȟȚȓȧȎȓȠȟȭȐȟȠȜȞȜțȡȜȏȞȎȕȜȐȎțȖȭȝȞȜȒȡȘȠȜȐ, ȝȞȖ%G> 0 – Ȑ ȟȠȜȞȜțȡ ȞȓȎȑȓțȠȜȐ. ǰ ȟȜȟȠȜȭțȖȖ ȞȎȐțȜȐȓȟȖȭ %G= 0.

ǰȎȔțȜ ȝȜȒȥȓȞȘțȡȠȪ, ȥȠȜ ȠȐȓȞȒȜȢȎȕțȩȓ ȞȓȎȘȤȖȖ, ȘȎȘ ȝȞȎȐȖșȜ, ȖȒȡȠ ȟ ȡȏȩșȪȬ ȫțȠȎșȪȝȖȖ, Ƞ. ȓ. ȭȐșȭȬȠȟȭ ȫȘȕȜȠȓȞȚȖȥȓȟȘȖȚȖ (ȟ ȐȩȒȓșȓțȖȓȚ ȠȓȝșȎ). ǽȜȫȠȜȚȡ ȖȕȚȓțȓțȖȓ ȠȓȞȚȖȥȓȟȘȖȣ ȡȟșȜȐȖȗ Ȑ ȣȜȒȓ ȠȐȓȞȒȜȢȎȕțȩȣ ȞȓȎȘȤȖȗ ȚȜȔȓȠ ȟȡȧȓȟȠȐȓțțȜ ȝȜȐșȖȭȠȪ țȎ ȖțȠȓțȟȖȐțȜȟȠȪ ȜȏȞȎȕȜȐȎțȖȭ ȓȓ ȝȞȜȒȡȘȠȜȐ. Dzșȭ ȘȜțȠȎȘȠțȩȣ ȟȠȞȡȘȠȡȞ, Ȑ ȘȜȠȜȞȩȣ ȝȞȜȠȓȘȎȬȠ ȫȘȕȜȠȓȞȚȖȥȓȟȘȖȓ ȞȓȎȘȤȖȖ ȚȓȔȒȡ ȜȏȞȎȕȡȬȧȖȚȖ Ȗȣ ȘȜȚȝȜțȓțȠȎȚȖ, ȝȜȐȩȦȓțȖȓȠȓȚȝȓȞȎȠȡȞȩȜȏȞȎȏȜȠȘȖȟȜȝȞȜȐȜȔȒȎȓȠȟȭ ȏȜșȓȓȖțȠȓțȟȖȐțȩȚȞȎȟȝȎȒȜȚȝȞȜȒȡȘȠȜȐȐȕȎȖȚȜȒȓȗȟȠȐȖȭ, Ƞ. ȓ. ȟȒȐȖȑȜȚ ȞȓȎȘȤȖȖ ȐșȓȐȜ.

ǻȓȜȟȠȎțȎȐșȖȐȎȭȟȪțȎȒȓȠȎșȭȣȜȏȞȎȕȜȐȎțȖȭȠȜȑȜȖșȖȖțȜȑȜȝȞȜȒȡȘȠȎ, ȐȜȕțȖȘȎȬȧȓȑȜȐȞȓȕȡșȪȠȎȠȓ ȠȐȓȞȒȜȠȓșȪțȩȣ ȐȕȎȖȚȜȒȓȗȟȠȐȖȗ